Structures for nitride vertical transistors

Patent metadata

Field	Value
Publication number	US-10256352-B2
Application number	US-201615388963-A
Country	US
Kind code	B2
Filing date	Dec 22, 2016
Priority date	Jun 27, 2014
Publication date	Apr 9, 2019
Grant date	Apr 9, 2019

Abstract

A vertical semiconductor transistor and a method of forming the same. A vertical semiconductor transistor has at least one semiconductor region, a source, and at least one gate region. The at least one semiconductor region includes a III-nitride semiconductor material. The source is formed over the at least one semiconductor region. The at least one gate region is formed around at least a portion of the at least one semiconductor region.

First claim

What is claimed is:

1. A vertical semiconductor transistor comprising:
at least one semiconductor region including a first semiconductor region and a second semiconductor region having the same type of doping, wherein the at least one semiconductor region includes a III-nitride semiconductor material and the first semiconductor region is adjacent to the second semiconductor region, and wherein the first semiconductor region has a higher dopant concentration than the second semiconductor region;
a source formed over the at least one semiconductor region;
at least one gate region formed around at least a portion of the first semiconductor region, wherein the at least one gate region includes a metal; and
a dielectric layer between the at least one semiconductor region and the at least one gate region.

2. The vertical semiconductor transistor of claim 1 , wherein the at least one gate region is formed around the first semiconductor region to enclose a cross-sectional area of the first semiconductor region.

3. The vertical semiconductor transistor of claim 2 , wherein the at least one gate region and the first semiconductor region are coaxial.

4. The vertical semiconductor transistor of claim 1 , wherein the first semiconductor region is formed over the second semiconductor region, wherein the source is formed over the first semiconductor region, the second semiconductor region has a larger cross-sectional area than the first semiconductor region, and the at least one gate region is formed around the first semiconductor region.

5. The vertical semiconductor transistor of claim 4 , wherein the at least one semiconductor region further comprises a third semiconductor region having a higher dopant concentration than the first semiconductor region, wherein the third semiconductor region is formed between the first semiconductor region and the source.

6. The vertical semiconductor transistor of claim 1 , further comprising a conductive layer formed on a surface of the at least one semiconductor region opposite to the source.

7. The vertical semiconductor transistor of claim 6 , wherein the at least one semiconductor region has a higher concentration of dopant proximate to the source than to the conductive layer.

8. The vertical semiconductor transistor of claim 6 , further comprising a drain formed on a surface of the conductive layer opposite to the at least one semiconductor region.

9. The vertical semiconductor transistor of claim 6 , further comprising a drain formed on a surface of the conductive layer that contacts the at least one semiconductor region, wherein the drain is positioned separate from the at least one semiconductor region.

10. The vertical semiconductor transistor of claim 6 , further comprising a drain formed on a surface of the conductive layer, wherein the drain includes a semiconductor region with a higher dopant concentration than the at least one semiconductor region.

11. The vertical semiconductor transistor of claim 1 , wherein the source includes a semiconductor region having a higher dopant concentration than the at least one semiconductor region.

12. A vertical semiconductor transistor comprising:
at least one semiconductor region including a first region and a second region, wherein the at least one semiconductor region includes a III-nitride semiconductor material, and wherein the first region and the second region have different types of doping;
a source formed over the first region;
at least one gate region formed around at least a portion of only the second region, wherein the at least one gate region includes a metal; and
an oxide layer between the at least one semiconductor region and the at least one gate region.

13. The vertical semiconductor transistor of claim 12 , wherein the at least one gate region is formed around the second region to enclose a cross-sectional area of the second region.

14. The vertical semiconductor transistor of claim 12 , further comprising a conductive layer formed on a surface of the at least one semiconductor region opposite to the source.

15. The vertical semiconductor transistor of claim 14 , further comprising a drain formed on a surface of the conductive layer opposite to the at least one semiconductor region.

16. The vertical semiconductor transistor of claim 12 , wherein the second region has a cross-sectional area surrounded by the at least one gate region.

17. The vertical semiconductor transistor of claim 12 , wherein the first region is a first n-type doped region proximate to the source, the at least one semiconductor region further includes a second n-type doped region proximate to a conductive layer, and the second region is a p-type doped region between the first n-type doped region and the second n-type doped region.

18. The vertical semiconductor transistor of claim 17 , wherein the first n-type doped region has a higher dopant concentration than the second n-type doped region.

19. A method of forming a vertical semiconductor transistor, the method comprising:
forming at least one semiconductor region including a first semiconductor region and a second semiconductor region having the same type of doping, wherein the at least one semiconductor region includes a III-nitride semiconductor material and the first semiconductor region is adjacent to the second semiconductor region, and wherein the first semiconductor region has a higher dopant concentration than the second semiconductor region;
forming a source over the at least one semiconductor region;
forming at least one gate region around at least a portion of the first semiconductor region, wherein the at least one gate region includes a metal; and
forming a dielectric layer between the at least one semiconductor region and the at least one gate region.

20. The method of claim 19 , wherein forming the at least one semiconductor region comprises forming the first semiconductor region over the second semiconductor region, wherein the source is formed over the first semiconductor region, and the second semiconductor region has a larger cross-sectional area than the first semiconductor region.

21. The method of claim 20 , wherein forming the first semiconductor region over the second semiconductor region comprises forming the first semiconductor region with a higher dopant concentration than the second semiconductor region.

22. A method of forming a vertical semiconductor transistor, the method comprising:
forming at least one semiconductor region including a first region and a second region, wherein the at least one semiconductor region includes a III-nitride semiconductor material, and wherein the first region and the second region have different types of doping;
forming a source over the first region;
forming at least one gate region around at least a portion of only the second region, wherein the at least one gate region includes a metal; and
forming an oxide layer between the at least one semiconductor region and the at least one gate region.

23. The method of claim 22 , wherein forming the at least one semiconductor region comprises forming a first n-type doped region proximate to the source as the first region, a second n-type doped region proximate to a conductive layer, and a p-type doped region between the first n-type doped region and the second n-type doped region as the second region.

Assignees

• Massachusetts Inst Technology

Inventors

• Sun Min
• Palacios Tomas Apostol

Classifications

• H10P14/3416

  Nitrides · CPC title

• H01L29/8122 Primary

  Electricity · mapped topic

• H01L29/7827

  Electricity · mapped topic

• H01L29/2003

  Electricity · mapped topic

• H01L29/0649

  Electricity · mapped topic