Method of forming a semiconductor package with conductive interconnect frame and structure
US-2017309554-A1 · Oct 26, 2017 · US
US10256207B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10256207-B2 |
| Application number | US-201815958581-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 20, 2018 |
| Priority date | Jan 19, 2016 |
| Publication date | Apr 9, 2019 |
| Grant date | Apr 9, 2019 |
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A clip-bonded semiconductor chip package comprises a lead frame having a pad and a lead; a semiconductor chip bonded onto the pad of the lead frame; a bonding pad on the semiconductor chip; metal bumps formed on the bonding pad; a clip having first and second portions coupled to each other wherein the first portion is bonded to the bonding pad via the metal bumps, wherein the second portion is bonded to the lead of the lead frame; and a package body made of a molding material around the lead frame, the semiconductor chip and the clip.
Opening claim text (preview).
What is claimed is: 1. A clip-bonded semiconductor chip package comprising: a lead frame having a pad and a lead; a semiconductor chip bonded onto the pad of the lead frame; a bonding pad on the semiconductor chip; metal bumps formed on the bonding pad; a clip having first and second portions wherein the first portion is bonded to the bonding pad and the second portion is bonded to the lead of the lead frame; and a package body made of a molding material around the lead frame, wherein the bonding pad comprises Al and the metal bumps comprise Cu or Au or Al, by which a conductive adhesive material can be filled between the bonding pad and the first portion of the clip, thus enabling the bonding pad and the first portion of the clip to be bonded together, and wherein the metal bumps are firmly bonded onto the bonding pad by ultrasonic welding, and do not directly contact the clip, thus an electrical conductivity is achieved in an order of the bonding pad, the metal bumps, the conductive adhesive material and the clip. 2. The clip-bonded semiconductor chip package of claim 1 , wherein the conductive adhesive material includes a solder or a conductive epoxy-based adhesive material. 3. The clip-bonded semiconductor chip package of claim 1 , wherein the second portion of the clip has a downset extending downwardly and inclinedly, wherein the downset has a distal end portion contacting the lead of the lead frame, wherein only an edge of the distal end portion contacts a surface of the lead of the lead frame, wherein a second conductive adhesive material is formed between the distal end portion and the lead of the lead frame. 4. A clip-bonded semiconductor chip package comprising: a lead frame having a pad and a lead; a semiconductor chip bonded onto the pad of the lead frame; a bonding pad on a first surface of the semiconductor chip; metal bumps formed on the bonding pad; a clip having first and second portions wherein the first portion is bonded to the bonding pad via a conductive adhesive material and the second portion is bonded to the lead of the lead frame; and a package body made of a molding material around the lead frame, the semiconductor chip and the clip, wherein the bonding pad comprises Al and the metal bumps comprise Cu or Au or Al, by which the conductive adhesive material can be filled between the bonding pad and the first portion of the clip, thus enabling the bonding pad and the first portion of the clip to be bonded together, and wherein the metal bumps are firmly bonded onto the bonding pad by ultrasonic welding, and do not directly contact the clip, thus an electrical conductivity is achieved in an order of the bonding pad, the metal bumps, the conductive adhesive material and the clip.
using a polymer adhesive, e.g. an adhesive based on silicone or epoxy · CPC title
Ultrasonic bonding, e.g. thermosonic bonding · CPC title
Multiple chips on leadframes · CPC title
Dispositions of multiple connectors or interconnections · CPC title
Bond pads, in general · CPC title
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