Block polymers for sub-10 nm patterning

US10239982B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10239982-B2
Application numberUS-201715439604-A
CountryUS
Kind codeB2
Filing dateFeb 22, 2017
Priority dateFeb 23, 2016
Publication dateMar 26, 2019
Grant dateMar 26, 2019

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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Abstract

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The present invention relates to a method for the synthesis and utilization of block copolymer can that form sub-10 nm lamella nanostructures. Such methods have many uses including multiple applications in the semiconductor industry including production of templates for nanoimprint lithography.

First claim

Opening claim text (preview).

The invention claimed is: 1. A block copolymer comprising 5-vinylbenzo [d][1,3]dioxole, wherein said block copolymer is part of a layered structure. 2. The block copolymer of claim 1 , wherein said block copolymer further comprises a silicon-containing block. 3. The block copolymer of claim 2 , wherein said block copolymer further comprises pentamethyldisilylstyrene. 4. The block copolymer of claim 3 , wherein said block copolymer is poly(5-vinylbenzo[d][1,3]dioxole)-b-poly(pentamethyldisilylstyrene). 5. Sub-10 nm nanostructures comprising a block copolymer comprising 5-vinylbenzo[d][1,3]dioxole. 6. A method to achieve sub-10 nm nanostructures, comprising a) coating a block copolymer film on a substrate, said block copolymer comprising 5-vinylbenzo [d][1,3]dioxole; b) applying a top coat on top of the block copolymer, and c) annealing under conditions such that sub-10 nm nanostructures form. 7. The method of claim 6 , wherein the surface of said substrate is treated to be neutral or near neutral prior to said coating of step a). 8. The method of claim 6 , wherein said nanostructures are lamella nanostructures. 9. The method of claim 6 , wherein said nanostructures are cylindrical nanostructures. 10. The method of claim 6 , further comprising d) etching said layered structure to remove the top coat and part of the block copolymer revealing said nanostructures. 11. A method of creating a layered structure, comprising: a) providing a surface, a surface treatment layer, a block copolymer comprising 5-vinylbenzo [d][1,3]dioxole, and a top coat composition; b) treating said surface with said surface treatment layer to create a first layer on said surface; c) coating said first layer with block copolymer to create a second layer on said surface comprising a block copolymer film; and d) coating said second layer with said top coat composition so as to create a third layer on said surface, said third layer comprising a top coat on said block copolymer film surface, said first, second and third layers comprising a layered structure.

Assignees

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Classifications

  • of masks comprising organic materials · CPC title

  • Curing · CPC title

  • Coating compositions based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Coating compositions based on derivatives of such polymers · CPC title

  • synthetic lacquers or varnishes (B05D7/08, B05D7/16 take precedence) · CPC title

  • C08F297/00Primary

    Macromolecular compounds obtained by successively polymerising different monomer systems using a catalyst of the ionic or coordination type without deactivating the intermediate polymer · CPC title

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What does patent US10239982B2 cover?
The present invention relates to a method for the synthesis and utilization of block copolymer can that form sub-10 nm lamella nanostructures. Such methods have many uses including multiple applications in the semiconductor industry including production of templates for nanoimprint lithography.
Who is the assignee on this patent?
Univ Texas
What technology area does this patent fall under?
Primary CPC classification C08F297/00. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Mar 26 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).