Method and structure for improving vertical transistor

Patent metadata

Field	Value
Publication number	US-10236290-B2
Application number	US-201715795753-A
Country	US
Kind code	B2
Filing date	Oct 27, 2017
Priority date	Oct 5, 2016
Publication date	Mar 19, 2019
Grant date	Mar 19, 2019

Abstract

A vertical fin field-effect-transistor and a method for fabricating the same. The vertical fin field-effect-transistor includes a first source/drain disposed in contact with a substrate. A second source/drain is disposed above the first source/drain. At least one fin structure is disposed between and in contact with the first source/drain and the second source/drain. A width of the first source/drain and the second source/drain gradually decreases towards the fin structure. The method includes forming an oxide in contact with an exposed portion of at least one fin structure. During formation of the oxide, different areas of the exposed fin structure portion are oxidized at different rates. This forms a first region and a second region of the exposed fin structure portion. These regions each have a width that is greater than a width of a third region of the exposed fin structure portion situated between the first and second regions.

First claim

What is claimed is:

1. A vertical fin field-effect-transistor comprising at least:
a substrate;
a first source/drain disposed in contact with the substrate;
a second source/drain disposed above the first source/drain; and
at least one fin structure disposed between and in contact with the first source/drain and the second source/drain,
wherein a width of the first source/drain and a width of the second source/drain gradually decreases towards the fin structure, and wherein the second source/drain comprises an upper portion having a tapered width that gradually increases towards the fin structure.

2. The vertical fin field-effect-transistor of claim 1 , wherein the first source/drain comprises a faceted portion in contact with the fin structure.

3. The vertical fin field-effect-transistor of claim 1 , further comprising:
an oxide spacer in contact with a faceted portion of the first source/drain, wherein the faceted portion of the first source/drain is contact with the fin structure.

4. The vertical fin field-effect-transistor of claim 1 , further comprising:
a bottom spacer in contact with the first source/drain;
a gate structure in contact with the bottom spacer, the fin structure, and the second source/drain; and
a top spacer in contact with the gate structure and the second source/drain.

5. The vertical fin field-effect-transistor of claim 4 , wherein a portion of the top spacer extends below a top surface of the gate structure.

6. The vertical fin field-effect-transistor of claim 4 , wherein a portion of the top spacer tapers inward towards the gate structure.

7. The vertical fin field-effect-transistor of claim 4 , wherein the gate structure comprises:
a dielectric layer in contact with the bottom spacer, the fin structure, and a portion of the second source/drain layer,
a gate in contact with the dielectric layer, wherein the gate comprises at least one concavity formed in the top surface of the gate, wherein a top surface of the gate within the concavity is below a top surface of the dielectric layer.

8. The vertical fin field-effect-transistor of claim 7 , wherein a first portion of the top spacer extends below a top surface of the gate structure and contacts the gate, and wherein a second portion of the top spacer contacts the dielectric layer.

9. The vertical fin field-effect-transistor of claim 1 , further comprising:
a cap layer formed on and in contact with the second source/drain.

10. An integrated circuit comprising:
at least one vertical fin field-effect-transistor comprising at least:
a substrate;
a first source/drain disposed in contact with the substrate;
a second source/drain disposed above the first source/drain; and
at least one fin structure disposed between and in contact with the first source/drain and the second source/drain,
wherein a width of the first source/drain and a width of the second source/drain gradually decreases towards the fin structure, and wherein the second source/drain comprises an upper portion having a tapered width that gradually increases towards the fin structure.

11. The integrated circuit of claim 10 , wherein the first source/drain comprises a faceted portion in contact with the fin structure.

12. The integrated circuit of claim 10 , wherein the at least one vertical fin field-effect-transistor further comprises:
an oxide spacer in contact with a faceted portion of the first source/drain, wherein the faceted portion of the first source/drain is contact with the fin structure.

13. The integrated circuit of claim 10 , wherein the at least one vertical fin field-effect-transistor further comprises:
a bottom spacer in contact with the first source/drain;
a gate structure in contact with the bottom spacer, the fin structure, and the second source/drain; and
a top spacer in contact with the gate structure and the second source/drain.

14. The integrated circuit of claim 13 , wherein a portion of the top spacer extends below a top surface of the gate structure.

15. The integrated circuit of claim 13 , wherein a portion of the top spacer tapers inward towards the gate structure.

16. The integrated circuit of claim 13 , wherein the gate structure comprises:
a dielectric layer in contact with the bottom spacer, the fin structure, and a portion of the second source/drain layer;
a gate in contact with the dielectric layer, wherein the gate comprises at least one concavity formed in the top surface of the gate, wherein a top surface of the gate within the concavity is below a top surface of the dielectric layer.

17. The integrated circuit of claim 16 , wherein a first portion of the top spacer extends below a top surface of the gate structure and contacts the gate, and wherein a second portion of the top spacer contacts the dielectric layer.

18. The vertical fin field-effect-transistor of claim 10 , wherein the at least one vertical fin field-effect-transistor further comprises:
a cap layer formed on and in contact with the second source/drain.

Assignees

• IBM

Inventors

• Bi Zhenxing
• Cheng Kangguo
• Li Juntao
• Xu Peng

Classifications

• H10P50/642

  Chemical etching · CPC title

• H10P30/20

  into semiconductor materials, e.g. for doping · CPC title

• H10P14/6306

  of the semiconductor materials · CPC title

• H01L27/0886 Primary

  Electricity · mapped topic

• H01L29/7827

  Electricity · mapped topic