Heater
US-2020374986-A1 · Nov 26, 2020 · US
Infrared light source
US10225886B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10225886-B2 |
| Application number | US-201615075285-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 21, 2016 |
| Priority date | Nov 26, 2015 |
| Publication date | Mar 5, 2019 |
| Grant date | Mar 5, 2019 |
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- Title
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Abstract
Official abstract text for this publication.
An infrared light source includes a resistor formed on the side of one principal surface of a support substrate via an insulating film; a plurality of projections formed on the one principal surface side of the support substrate by etching the support substrate; and a protection film stacked as a layer on top of the resistor and projections. The resistor is disposed on the same plane in a region which forms an infrared emission portion in which the plurality of projections and the resistor are formed, and infrared is efficiently emitted from the region in which are formed the projections by heat generated by energizing the resistor.
First claim
Opening claim text (preview).
What is claimed is: 1. An infrared light source comprising: a support substrate; a resistor formed on the side of one principal surface of the support substrate via an insulating film; a plurality of projections formed on the one principal surface side of the support substrate; and a protection film stacked as a layer on top of the resistor and projections, wherein the resistor is disposed on the same plane in a region in which the plurality of projections and the resistor are formed, and infrared is emitted by heat generated by energizing the resistor, and wherein the resistor is disposed on a flat planar surface of the insulating film between the plurality of projections. 2. The infrared light source according to claim 1 , wherein the projections are columnar bodies formed to a state in which a region, of a region of the support substrate from which infrared is emitted, other than the projections is dug down to a depth equivalent to the height of the projections from the one principal surface. 3. The infrared light source according to claim 1 , wherein the projections are basic shape portions when stacking the insulating film and protection film, and are projection-shaped void portions formed by removing the basic shape portions after forming the insulating film and protection film. 4. The infrared light source according to claim 1 , wherein an SOI substrate is used as the support substrate. 5. The infrared light source according to claim 1 , wherein a void portion is provided below the region of the support substrate from which infrared is emitted. 6. An infrared light source comprising: a support substrate; a resistor formed on the side of one principal surface of the support substrate via an insulating film; a plurality of projections formed on the one principal surface side of the support substrate; and a protection film stacked as a layer on top of the resistor and projections, wherein the resistor is disposed on the same plane in a region in which the plurality of projections and the resistor are formed, and infrared is emitted by heat generated by energizing the resistor, wherein the resistor is disposed on a flat planar surface of the insulating film between the plurality of projections, wherein a void portion is provided below the region of the support substrate from which infrared is emitted, and wherein the void portion provided in the support substrate, by being dug down from the one principal surface side of the support substrate, is formed to a depth which does not reach the rear surface side. 7. An infrared light source comprising: a support substrate; a resistor formed on the side of one principal surface of the support substrate via an insulating film; a plurality of projections formed on the one principal surface side of the support substrate; and a protection film stacked as a layer on top of the resistor and projections, wherein the resistor is disposed on the same plane in a region in which the plurality of projections and the resistor are formed, and infrared is emitted by heat generated by energizing the resistor, wherein the resistor is disposed on a flat planar surface of the insulating film between the plurality of projections, wherein a void portion is provided below the region of the support substrate from which infrared is emitted, and wherein the void portion provided in the support substrate is formed to a state in which the void portion passes through the support substrate from the one principal surface side to the rear surface side of the support substrate. 8. The infrared light source according to claim 5 , wherein the void portion provided in the support substrate, by being dug down from the rear surface side of the support substrate, is formed to a depth which does not reach the one principal surface side.
Assignees
Inventors
Classifications
- H05B3/009Primary
heating devices not specially adapted for a particular application · CPC title
Manufacturing methods or apparatus for heaters · CPC title
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Frequently asked questions
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- What does patent US10225886B2 cover?
- An infrared light source includes a resistor formed on the side of one principal surface of a support substrate via an insulating film; a plurality of projections formed on the one principal surface side of the support substrate by etching the support substrate; and a protection film stacked as a layer on top of the resistor and projections. The resistor is disposed on the same plane in a regio…
- Who is the assignee on this patent?
- Mitsubishi Electric Corp
- What technology area does this patent fall under?
- Primary CPC classification H05B3/009. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 05 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).