System and/or method for heat treating conductive coatings using wavelength-tuned infrared radiation

Patent metadata

Field	Value
Publication number	US-10201040-B2
Application number	US-201414337293-A
Country	US
Kind code	B2
Filing date	Jul 22, 2014
Priority date	Aug 31, 2010
Publication date	Feb 5, 2019
Grant date	Feb 5, 2019

Abstract

Certain example embodiments relate to systems and/or methods for preferentially and selectively heat treating conductive coatings such as ITO using specifically tuned near infrared-short wave infrared (NIR-SWIR) radiation. In certain example embodiments, the coating is preferentially heated, thereby improving its properties while at the underlying substrate is kept at low temperatures. Such techniques are advantageous for applications on glass and/or other substrates, e.g., where elevated substrate temperatures can lead to stress changes that adversely effect downstream processing (such as, for example, cutting, grinding, etc.) and may sometimes even result in substrate breakage or deformation. Selective heating of the coating may in certain example embodiments be obtained by using IR emitters with peak outputs over spectral wavelengths where the conductive coating (or the conductive layer(s) in the conductive coating) is significantly absorbing but where the substrate has reduced or minimal absorption.

First claim

What is claimed is:

1. An infrared heat treatment system comprising:
a coated article including on a glass substrate a layer comprising indium tin oxide located between and directly contacting first and second layers each comprising silicon nitride; and
an infrared heating element comprising a heater and configured to irradiate infrared radiation at a peak emission of 1-2 μm at the coated article for a predetermined amount of time so as to cause preferential heating of the coating, or a portion of the coating, such that the glass substrate remains at a temperature below 425 degrees C. without any additional cooling elements.

2. The system of claim 1 , wherein the infrared heating element is configured to operate at a power density of 10.56 kW/ft 2 .

3. The system of claim 1 , wherein the heater comprises a furnace comprising quartz lamps.

4. The system of claim 3 , wherein the lamps have a bulb output of 80 W/in, with mounting on 1″ centers.

5. The system of claim 2 , wherein the infrared heating element is located about 4″ from a surface of glass substrate.

6. The system of claim 1 , wherein the heater comprises a laser emitter.

7. The system of claim 1 , wherein the infrared heating element is configured to produce electromagnetic radiation focusable into a rectangular beam spanning a width of the glass substrate.

8. The system of claim 1 , wherein the first layer comprising silicon nitride further comprises oxygen.

9. The system of claim 8 , wherein the coating further comprises an overcoat comprising an oxide of zirconium that is located on and directly contacting the second layer comprising silicon nitride.

10. An infrared heat treatment system comprising:
a coated article including a layer comprising indium tin oxide on a glass substrate located between and directly contacting first and second layers each comprising silicon nitride;
means for directing infrared radiation at a peak emission of 1-2 μm at the coated article for a predetermined amount of time so as to cause preferential heating of the coating, or a portion of the coating, such that the glass substrate remains at a temperature below 425 degrees C. without any additional cooling elements.

11. The system of claim 10 , wherein the first layer comprising silicon nitride further comprises oxygen.

12. The system of claim 10 , wherein the coating further comprises an overcoat comprising an oxide of zirconium that is located on and directly contacting the second layer comprising silicon nitride.

Assignees

• Guardian Glass Llc

Inventors

• Mclean David D
• Blacker Richard

Classifications

• F27B5/14

  Arrangements of heating devices · CPC title

• H05B3/009

  heating devices not specially adapted for a particular application · CPC title

• H05B3/0047 Primary

  for semiconductor manufacture · CPC title

• C03C2218/32

  After-treatment · CPC title

• C03C23/001

  by infrared light · CPC title