Systems and methods for creating airgap seals using atomic layer deposition and high density plasma chemical vapor deposition

Patent metadata

Field	Value
Publication number	US-10224235-B2
Application number	US-201715422953-A
Country	US
Kind code	B2
Filing date	Feb 2, 2017
Priority date	Feb 5, 2016
Publication date	Mar 5, 2019
Grant date	Mar 5, 2019

Abstract

A method for processing a substrate to create an air gap includes a) providing a substrate including a first trench and a second trench; b) depositing a conformal layer on the substrate; c) performing sputtering to at least partially pinch off an upper portion of the first trench and the second trench at a location spaced from upper openings of the first trench and the second trench; and d) performing sputtering/deposition to seal first and second airgaps in the first trench and the second trench.

First claim

What is claimed is:

1. A method for processing a substrate to create an air gap, comprising:
a) providing a substrate including a first trench and a second trench;
b) depositing a conformal layer on the substrate;
c) performing sputtering and re-deposition to at least partially pinch off an upper portion of the first trench and the second trench at a location spaced from upper openings of the first trench and the second trench,
wherein c) is performed using a first high density plasma (HDP) chemical vapor deposition (CVD) process using a plasma gas without film precursor; and
d) performing sputtering/deposition to seal first and second airgaps in the first trench and the second trench.

2. The method of claim 1 , wherein the plasma gas includes helium (He).

3. The method of claim 1 , wherein d) is performed using a second high density plasma (HDP) chemical vapor deposition (CVD) process.

4. The method of claim 3 , wherein the second HDP CVD process uses a plasma gas including a film precursor.

5. The method of claim 3 , wherein the second HDP CVD process uses a plasma gas mixture including silane (SiH4), molecular hydrogen (H2), helium (He), argon (Ar) and molecular oxygen (O2).

6. The method of claim 1 , wherein the substrate includes:
a first metal gate arranged on an underlying layer;
a second metal gate arranged on the underlying layer; and
a contact arranged between the first metal gate and the second metal gate,
wherein the first trench is located between the first metal gate and the contact, and wherein the second trench is located between the second metal gate and the contact.

7. The method of claim 6 , further comprising:
a first self-aligning contact layer arranged on the first metal gate; and
a second self-aligning contact arranged on the second metal gate.

8. The method of claim 1 , further comprising depositing the conformal layer using atomic layer deposition.

9. The method of claim 1 , wherein:
the first trench and the second trench have a first aspect ratio;
the first trench and the second trench have a second aspect ratio after the conformal layer is deposited; and
the second aspect ratio is greater than the first aspect ratio.

10. A method for processing a substrate to create an air gap, comprising:
a) providing a substrate including features having a first aspect ratio;
b) depositing a conformal layer on the substrate, wherein the features have a second aspect ratio after the conformal layer is deposited, and wherein the second aspect ratio is greater than the first aspect ratio;
c) performing sputtering and re-deposition using a first high density plasma (HDP) chemical vapor deposition (CVD) process without film precursor to at least partially pinch off an upper portion of the features at a location spaced from upper openings of the features; and
d) performing sputtering/deposition using a second HDP CVD process with film precursor to seal an airgap in the features.

11. The method of claim 10 , wherein the first HDP CVD process including a plasma gas mixture including helium (He).

12. The method of claim 10 , wherein the second HDP CVD process uses a plasma gas mixture including silane (SiH4), molecular hydrogen (H2), helium (He), argon (Ar) and molecular oxygen (O2).

13. The method of claim 10 , wherein the substrate includes:
a first metal gate arranged on an underlying layer;
a second metal gate arranged on the underlying layer; and
a contact arranged between the first metal gate and the second metal gate,
wherein the features include a first trench located between the first metal gate and the contact and a second trench is located between the second metal gate and the contact.

14. The method of claim 13 , further comprising:
a first self-aligning contact layer arranged on the first metal gate; and
a second self-aligning contact arranged on the second metal gate.

15. The method of claim 10 , further comprising depositing the conformal layer using atomic layer deposition.

16. A method for processing a substrate to create an air gap, comprising:
a) providing a substrate including a first metal gate arranged on an underlying layer, a second metal gate arranged on the underlying layer, a contact arranged between the first metal gate and the second metal gate, a first trench is located between the first metal gate and the contact, a second trench is located between the second metal gate and the contact, a first self-aligning contact layer arranged on the first metal gate, and a second self-aligning contact arranged on the second metal gate;
b) depositing a conformal layer on the substrate;
c) performing sputtering and re-deposition using a first high density plasma (HDP) chemical vapor deposition (CVD) process to at least partially pinch off an upper portion of the first trench and the second trench at a location spaced from upper openings of the first trench and the second trench; and
d) performing sputtering/deposition using a second HDP CVD process to seal first and second airgaps in the first trench and the second trench.

17. The method of claim 16 , wherein the first HDP CVD process using a plasma gas including helium (He) without a film precursor.

18. The method of claim 16 , wherein the second HDP CVD process uses a plasma gas including a film precursor.

19. The method of claim 16 , wherein the second HDP CVD process uses a plasma gas mixture including silane (SiH4), molecular hydrogen (H2), helium (He), argon (Ar) and molecular oxygen (O2).

20. The method of claim 16 , further comprising depositing the conformal layer using atomic layer deposition.

21. The method of claim 16 , wherein:
the first trench and the second trench have a first aspect ratio;
the first trench and the second trench have a second aspect ratio after the conformal layer is deposited; and
the second aspect ratio is greater than the first aspect ratio.

Assignees

• Lam Res Corp

Inventors

• Park Jason Daejin
• Van Schravendijk Bart
• Lee Hsiang-Yun
• Kumar Purushottam

Classifications

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title

• H10P14/6514

  by exposure to a plasma · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title