Plating method and recording medium

Patent metadata

Field	Value
Publication number	US-10224208-B2
Application number	US-201615150517-A
Country	US
Kind code	B2
Filing date	May 10, 2016
Priority date	May 11, 2015
Publication date	Mar 5, 2019
Grant date	Mar 5, 2019

Abstract

An electroless plating process is performed on an Al layer, which is made of aluminum or an aluminum alloy, with an electroless plating liquid which is alkaline and contains a complexing agent. A plating method includes preparing a substrate 10 having a surface (for example, bottom surface of TSV 12) at which an Al layer 22 made of aluminum or an aluminum alloy is exposed; forming a zincate film 30 on a surface of the Al layer by performing a zincate treatment on the substrate; and forming a first electroless plating layer (for example, Co barrier layer 14a) on the surface of the Al layer with an electroless plating liquid (for example, Co-based plating liquid) which is alkaline and contains a complexing agent.

First claim

We claim:

1. A plating method, comprising:
preparing a substrate having a surface at which an Al layer made of aluminum or an aluminum alloy is exposed;
forming a zincate film on a surface of the Al layer by performing a zincate treatment on the substrate; and
forming a first electroless plating layer on the surface of the Al layer with an electroless plating liquid which is alkaline and contains a complexing agent,
wherein the zincate film on the surface of the Al layer is substituted with the first electroless plating layer,
the first electroless plating layer is a Co plating layer made of cobalt or a cobalt alloy,
the surface of the substrate has a recess,
the Al layer is an Al wiring layer having a surface exposed at a bottom surface of the recess, and
in the forming of the first electroless plating layer, the first electroless plating layer is formed on the surface of the Al wiring layer which is exposed at the bottom surface of the recess,
the method further comprises:
forming a catalyst layer at least on a side surface of the recess after the forming of the first electroless plating layer; and
forming, as a second electroless plating layer, a Co plating layer made of cobalt or a cobalt alloy on the bottom surface and the side surface of the recess,
wherein the second electroless plating layer is a barrier layer.

2. The plating method of claim 1 , further comprising:
burying a Cu plating layer made of copper or a copper alloy within the recess after the forming of the second electroless plating layer.

3. A computer-readable recording medium having stored thereon computer executable instructions that, in response to execution, cause a plating system to perform a plating method as claimed in claim 1 .

Assignees

• Tokyo Electron Ltd

Inventors

• Mizutani Nobutaka
• Iwashita Mitsuaki
• Tanaka Takashi

Classifications

• H10W20/2134

  TSVs extending from the semiconductor wafer into back-end-of-line layers · CPC title

• H10W20/0234

  comprising etching via holes that stop on pads or on electrodes · CPC title

• H10W20/0242

  comprising etching via holes from the back sides of the chips, wafers or substrates · CPC title

• H10W20/425

  Barrier, adhesion or liner layers · CPC title

• H10W20/044 Primary

  for electroless plating · CPC title