Tin-containing dopant compositions, systems and methods for use in ION implantation systems

Patent metadata

Field	Value
Publication number	US-10221201-B2
Application number	US-201615386308-A
Country	US
Kind code	B2
Filing date	Dec 21, 2016
Priority date	Dec 31, 2015
Publication date	Mar 5, 2019
Grant date	Mar 5, 2019

Abstract

A novel method and system for using certain tin compounds as dopant sources for ion implantation are provided. A suitable tin-containing dopant source material is selected based on one or more certain attributes. Some of these attributes include stability at room temperature; sufficient vapor pressure to be delivered from its source supply to an ion chamber and, the ability to produce a suitable beam current for ion implantation to achieve the required implant Sn dosage. The dopant source is preferably delivered from a source supply that actuates under sub atmospheric conditions to enhance the safety and reliability during operation.

First claim

The invention claimed is:

1. A method for using Sn containing dopant material for an ion implantation process, comprising the steps of:
storing a Sn containing dopant source in a storage and delivery container;
the Sn-containing dopant source characterized by one or more of the following attributes: (i) stability during storage and delivery; (ii) a vapor pressure of greater than or equal to 20 Torr at room temperature (25° C.); (iii) existing as a liquid at room temperature; and (iv) comprising Sn, H and a halogen atom;
withdrawing the Sn containing dopant source in the vapor phase from the storage and delivery container when a diaphragm moves a vacuum actuated check valve from a closed position to an open position in response to a sub-atmospheric condition achieved along the discharge flow path;
flowing the vaporized the Sn containing dopant source in response to the sub-atmospheric condition achieved along the discharge flow path; and
introducing the Sn-containing dopant source vapor to an ion source chamber.

2. The method of claim 1 , wherein said Sn containing dopant source has a representative formula R n SnX 4-n where n=0 to 4, R is a functional group comprising carbon (C) and/or hydrogen (H) and X is a halogen selected from the group consisting of F, Cl, Br and I.

3. The method of claim 1 , wherein said Sn-containing dopant source has a representative formula R n SnX 4-n where n=1 to 3, R is a functional group comprising carbon (C) and/or hydrogen (H) and X is a halogen selected from the group consisting of F, Cl, Br and I.

4. The method of claim 1 , wherein said Sn-containing dopant source has a representative formula R n SnX 4-n where n=0 or 4, R is a functional group comprising carbon (C) and/or hydrogen (H) and X is a halogen selected from the group consisting of F, Cl, Br and I.

5. The method of claim 1 , wherein the Sn-containing dopant source has the representative formula R n Sn(C y X z ) 4-n where n=1 to 3, X is a halogen selected from the group consisting of F, Cl, Br and I, and R comprises C and/or H atoms, and the values of y and z vary depending on the C—C bonding such that each atom in the C y X z group has a closed shell of valence electrons.

6. The method of claim 1 , wherein the Sn-containing dopant source has the representative formula R n Sn(C y X z ) 4-n where n=0 or 4, X is a halogen selected from the group consisting of F, Cl, Br and I and R comprises C and/or H atoms, and the values of y and z vary depending on the C—C bonding such that each atom in the C y X z group has a closed shell of valence electrons.

7. The method of claim 1 , wherein the Sn-containing dopant source material has the representative formula R 4-y-z Sn(OR′) y X z where z=0 to 3, y=1 to 4, X is a halogen (X=F, Cl, Br, I) and R and R′ contains a mixture of C and/or H atoms.

8. The method of claim 1 , further comprising introducing a diluent species into the ion source chamber.

9. A source supply for a Sn dopant gas composition comprising:
a Sn-containing dopant source characterized by one or more of the following attributes: (i) stability during storage and delivery; (ii) a vapor pressure of greater than or equal to 20 Torr at room temperature (25° C.); (iii) existing as a liquid at room temperature; and (iv) comprising Sn, H and a halogen atom;
a delivery and storage device for maintaining the Sn-containing dopant source in a pressurized state within an interior volume of the device, said delivery device in fluid communication with a discharge flow path, wherein said delivery device comprises a vacuum actuated check valve that is actuated by a diaphragm to allow a controlled flow of the Sn-containing dopant source from the interior volume of the device in response to a sub-atmospheric condition achieved along the discharge flow path.

10. The source supply of claim 9 , said delivery and storage device comprises an adsorbent onto which said Sn-containing dopant source is adsorbed thereon during storage.

11. The source supply of claim 9 , wherein said Sn-containing dopant source is stored in the delivery and storage device in a gas phase.

12. The source supply of claim 9 , wherein said Sn-containing dopant source is stored in the delivery and storage device in a liquid phase in equilibrium with a gas phase, wherein said Sn-containing dopant source exerts a sufficient vapor pressure to allow flow from the storage and delivery device into an ion chamber that is operably connected to said storage and delivery device.

13. A Sn-containing dopant composition for use in an ion implantation process, comprising:
a Sn-containing dopant source material characterized by the following attribute: (i) a vapor pressure of greater than or equal to 20 Torr at room temperature (25° C.); and
a delivery and storage device for maintaining the Sn-containing dopant source material in a pressurized state within an interior volume of the device, said delivery device in fluid communication with a discharge flow path, wherein said delivery device comprises a vacuum actuated check valve that is actuated by a diaphragm to allow a controlled flow of the Sn-containing dopant source material from the interior volume of the device in response to a sub-atmospheric condition achieved along the discharge flow path.

14. The Sn-containing dopant composition of claim 13 , further characterized by one or more of any of the following attributes: (ii) stability during storage and delivery; and (iii) existing as a liquid at room temperature; and (iv) comprising Sn, H and a halogen atom.

15. The Sn-containing dopant composition of claim 14 , further characterized by 2 or more of the attributes of (ii), (iii) and (iv).

16. The Sn-containing dopant composition of claim 13 , further comprising each of attributes (i), (ii), (iii), and (iv).

17. The Sn-containing dopant composition of claim 13 , wherein said Sn containing dopant source material has a representative formula R n SnX 4-n where n=0 to 4, R is a functional group containing carbon (C) and/or hydrogen (H); and X is a halogen selected from the group consisting of F, Cl, Br and I.

18. The Sn-containing dopant composition of claim 13 , wherein said Sn-containing dopant source material has a representative formula R n SnX 4-n where n=1 to 3, R is a functional group comprising carbon (C) and/or hydrogen (H); and X is a halogen selected from the group consisting of F, Cl, Br and I.

19. The Sn-containing dopant composition of claim 13 , wherein said Sn-containing dopant source material has a representative formula R n SnX 4-n where n=0 or 4, R is a functional group comprising carbon (C) and/or hydrogen (H); and X is a halogen selected from the group consisting of F, Cl, Br and I.

20. The Sn-containing dopant composition of claim 13 , wherein the Sn-containing dopant source material has the representative formula R n Sn(C y X z ) 4-n where n=1 to 3, X is a halogen selected from the group comprising of F, Cl, Br and I; and R comprises C and/or H atoms, and the values of y and z vary depending on the C—C bonding such that each atom in the C y X z group has a closed shell of valence electrons.

21. The Sn-containing dopant composition of claim 13 , wherein the Sn-containing dopant source material has the representative formula R n Sn(C y X z ) 4-n where n=0 or 4, X is a halogen selected from the group consisting of F, Cl, Br and I, R comprises C and/or H atoms, and the values of y and z vary depending on the C—C bonding such that each atom in the C y X z group has a closed shell of valence ele

Assignees

• Reinicker Aaron
• Sinha Ashwini K
• Guo Qiong
• Praxair Technology Inc

Inventors

• Reinicker Aaron
• Sinha Ashwini K
• Guo Qiong

Classifications

• H10P30/206

  into Group III-V semiconductors · CPC title

• H10P30/204

  into Group IV semiconductors · CPC title

• H10P30/21

  of electrically active species · CPC title

• C07F7/2208 Primary

  Compounds having tin linked only to carbon, hydrogen and/or halogen · CPC title

• C07F7/2224

  Compounds having one or more tin-oxygen linkages · CPC title