Technique for processing a substrate

Patent metadata

Field	Value
Publication number	US-9064795-B2
Application number	US-201313832578-A
Country	US
Kind code	B2
Filing date	Mar 15, 2013
Priority date	Mar 30, 2012
Publication date	Jun 23, 2015
Grant date	Jun 23, 2015

Abstract

Techniques for processing a substrate are disclosed. In one exemplary embodiment, the technique may be realized as a method for processing a substrate, the method comprising: ionizing first material and second material in an ion source chamber of an ion source, the first material being boron (B) containing material, the second material being one of phosphorous (P) containing material and arsenic (As) containing material; generating first ions containing B and second ions containing one of P and As; and extracting the first and second ions from the ion source chamber and directing the first and second ions toward the substrate.

First claim

What is claimed is:

1. A method for processing a substrate, the method comprising:
ionizing first material and second material in an ion source chamber of an ion source, the first material being boron (B) containing material, the second material being one of phosphorous (P) containing material and arsenic (As) containing material;
generating first ions containing B and second ions containing one of P and As; and
extracting the first and second ions from the ion source chamber and directing the first and second ions toward the substrate, wherein one of the first and second materials is provided as a solid source in the ion source chamber and the other one of the first and second material is provided as a gas released into the ion source chamber.

2. The method according to claim 1 , wherein the solid source is disposed on an ion source chamber wall of the ion source chamber.

3. The method according to claim 1 , wherein the ion source further comprises a dielectric window and RF source, wherein the solid source is disposed on the dielectric window.

Assignees

• Varian Semiconductor Equipment

Inventors

• Koo Bon-Woong
• White Richard M
• Radovanov Svetlana B
• Daniels Kevin M
• Cobb Eric R
• Pitman David W

Classifications

• H10P30/20 Primary

  into semiconductor materials, e.g. for doping · CPC title

• H01J37/08

  Ion sources; Ion guns · CPC title

• H01J2237/006

  Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece, (H01J37/3244 takes precedence; environmental cells for electron microscopes H01J2237/2003; microscopes with environmental specimen chamber H01J2237/2608) · CPC title

• H01J2237/022

  Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube · CPC title

• H01J37/3171

  for ion implantation · CPC title