Memory cell for non-volatile memory system

Patent metadata

Field	Value
Publication number	US-10217795-B1
Application number	US-201715684150-A
Country	US
Kind code	B1
Filing date	Aug 23, 2017
Priority date	Aug 23, 2017
Publication date	Feb 26, 2019
Grant date	Feb 26, 2019

Abstract

A non-volatile storage apparatus is proposed that includes a plurality of serially connected non-volatile reversible resistance-switching memory cells, a plurality of word lines such that each of the memory cells is connected to a different word line, a bit line connected to a first end of the serially connected memory cells and a switch connected to a second end of the serially connected memory cells. In one embodiment, the memory cells include a reversible resistance-switching structure comprising a first material, a second material and a reversible resistance-switching interface between the first material and the second material, a channel, and means for switching current between current flowing through the channel and current flowing through the reversible resistance-switching interface in order to program and read the reversible resistance-switching interface. A process for manufacturing the memory is also disclosed.

First claim

What is claimed is:

1. A non-volatile storage apparatus, comprising:
a first a reversible resistance-switching structure;
a second a reversible resistance-switching structure; and
a control region comprising a word line layer and an offset layer adjacent to the word line layer, the word line layer on a first side of the control region facing the first reversible resistance-switching structure, the offset layer on a second side of the control region facing the second reversible resistance-switching structure, the offset layer shielding the word line layer from controlling the second reversible resistance-switching structure.

2. The non-volatile storage apparatus of claim 1 , further comprising:
a dielectric region having pockets, the first reversible resistance-switching structure is at least partially positioned in one of the pockets, the second reversible resistance-switching structure is at least partially positioned in one of the pockets.

3. The non-volatile storage apparatus of claim 2 , wherein:
the first reversible resistance-switching structure comprises an active layer partially positioned in one of the pockets and a barrier layer in contact with the active layer to form a reversible resistance-switching interface.

4. The non-volatile storage apparatus of claim 1 , further comprising:
a channel positioned adjacent the first reversible resistance-switching structure, the second reversible resistance-switching structure and the control region;
the channel is positioned between the control region and the first reversible resistance-switching structure; and
the channel is positioned between the control region and the second reversible resistance-switching structure.

5. The non-volatile storage apparatus of claim 4 , wherein:
the channel is vertically elongated;
the first reversible resistance-switching structure is positioned above the second reversible resistance-switching structure;
the control region is positioned higher than the second reversible resistance-switching structure; and
the control region is positioned lower than the first reversible resistance-switching structure.

6. The non-volatile storage apparatus of claim 4 , wherein:
the first reversible resistance-switching structure comprises an active layer partially positioned in one of the pockets and a barrier layer in contact with the active layer to form a reversible resistance-switching interface; and
the channel layer is positioned along three sides of the active layer.

7. The non-volatile storage apparatus of claim 1 , wherein:
the first reversible resistance-switching structure and the second a reversible resistance-switching structure each include a first material, a second material and a reversible resistance-switching interface between the first material and the second material.

8. The non-volatile storage apparatus of claim 7 , wherein:
the first material is a semiconductor material;
the second material is a conductive oxide material; and
migration of oxygen ions towards or away from the reversible resistance-switching interface modulates a barrier height at the reversible resistance-switching interface, a current through the reversible resistance-switching interface is dependent on the barrier height.

Assignees

• Sandisk Technologies Llc

Inventors

• Franca-Neto Luiz M
• Apodaca Mac D
• Petti Christopher J

Classifications

• G11C2213/78

  Array wherein the memory cells of a group share an access device, all the memory cells of the group having a common electrode and the access device being not part of a word line or a bit line driver · CPC title

• G11C2213/79

  Array wherein the access device being a transistor · CPC title

• G11C2213/74

  Array wherein each memory cell has more than one access device · CPC title

• G11C2213/75

  Array having a NAND structure comprising, for example, memory cells in series or memory elements in series, a memory element being a memory cell in parallel with an access transistor · CPC title

• G11C2213/71

  Three dimensional array · CPC title