Method for the manufacture of a correlated electron material device

Patent metadata

Field	Value
Publication number	US-10211398-B2
Application number	US-201715641143-A
Country	US
Kind code	B2
Filing date	Jul 3, 2017
Priority date	Jul 3, 2017
Publication date	Feb 19, 2019
Grant date	Feb 19, 2019

Abstract

Disclosed is a method for the manufacture of a CEM device comprising forming a thin film of a correlated electron material having a predetermined electrical impedance when the CEM device in its relatively conductive (low impedance) state, wherein the forming of the CEM thin film comprises forming a d- or f-block metal or metal compound doped by a physical or chemical vapor deposition with a predetermined amount of a dopant comprising a back-donating ligand for the metal.

First claim

The invention claimed is:

1. A method for the manufacture of a correlated electron material (CEM) device comprising forming a CEM thin film of a correlated electron material having a predetermined electrical impedance when the CEM device is in its relatively conductive (low impedance) state, wherein the forming of the CEM thin film comprises forming a d- or f-block metal or metal compound by a physical or chemical vapour deposition with a predetermined amount of a dopant comprising a back-donating ligand for the metal to impart the predetermined electrical impedance, and wherein the predetermined electrical impedance is selected to match a conductivity of the CEM device with a transductance of one or more in-series field effect transistors.

2. The method according to claim 1 , comprising forming the CEM thin film by a chemical vapour deposition, such as an atomic layer deposition.

3. The method according to claim 1 , comprising forming the CEM thin film to have an electrical conductivity between 10 3 S/m and 10 10 S/m.

4. The method according to claim 1 , comprising forming the CEM thin film to have a cross-sectional area between 25 nm 2 and 500 nm 2 .

5. The method according to claim 1 , wherein the back-donating ligand for the metal is selected from the group of back-donating ligands consisting of carbonyl, nitrosyl, isocyanide, dioxygen, dihydrogen, alkene, alkyne or phosphinyl.

6. The method according to claim 1 , wherein the back-donating ligand for the metal comprises one or more molecules of formula C a H b N d O f (in which a≥1, and b, d and f≥0) such as: carbonyl (CO), cyano (CN − ), ethylenediamine (C 2 H 8 N 2 ), 1,10-phenanthroline (C 12 H 8 N 2 ), bipyridine (C 10 H 8 N 2 ), pyridine (C 5 H 5 N), acetonitrile (CH 3 CN) and cyanosulfanides such as thiocyanate (NCS − ).

7. The method according to claim 1 , wherein the d-block metal or metal compound comprises nickel, iron, cobalt, ruthenium, rhodium, osmium or iridium.

8. The method according to claim 1 , wherein the forming of the CEM thin film comprises forming nickel oxide with a predetermined amount of a dopant comprising a back-donating ligand for nickel.

9. A correlated electron material (CEM) device comprising a CEM thin film of a correlated electron material having a predetermined electrical impedance when the CEM device is in its conductive state wherein the CEM thin film comprises a d- or f-block metal or metal compound doped with a predetermined amount of a back-donating ligand for the metal to impart the predetermined electrical impedance, and wherein the CEM thin film has a predetermined electrical impedance selected to match a conductivity of the CEM device to a transductance of one or more in-series field effect transistors.

10. The device according to claim 9 , wherein the CEM thin film has an electrical conductivity between 10 3 S/m and 10 10 S/m.

11. The device according to claim 9 , wherein the CEM thin film has a cross-sectional area between 25 nm 2 and 500 nm 2 .

12. The device according to claim 9 , wherein the CEM thin film comprises a transition metal oxide selected from the group consisting of oxides of nickel, iron, cobalt, ruthenium, osmium, iridium and mixtures thereof.

13. The device according to claim 9 , having a leakage current density (viz., a parasitic MIM diode current density) in its insulative state less than or equal to 500 A/cm 2 .

14. A method for tuning an electrical conductivity (or impedance) of a correlated electron material (CEM) device in its relatively conductive (low impedance) state to a transductance of one or more in-series field effect transistors in an electrical circuit, which method comprises steps of forming a first thin film of correlated electron material by a physical or chemical vapour deposition of a d- or f-block metal or metal compound which is doped by a first amount of back-donating ligand for the metal; comparing the electrical conductivity of the first thin film in its relatively conductive state to the transductance of the one or more in-series field effect transistors; and repeating these steps by forming one or more other thin films of correlated electron material each having a different amount of back-donating ligand for the metal as compared to the first thin film layer until the electrical conductivity of one of the other thin films in its relatively conductive state matches the conductivity of the device to the transductance of the one or more in-series field effect transistors.

15. The method according to claim 14 , wherein the forming of the first and the one or more other thin films of correlated electron material comprises atomic layer deposition.

Assignees

• Advanced Risc Mach Ltd

Inventors

• Paz De Araujo Carlos Alberto
• Celinska Jolanta Bozena
• Shifren Lucian

Classifications

• H01L49/003 Primary

  Electricity · mapped topic

• H01L49/02

  Electricity · mapped topic

• H10N70/041 Primary

  Modification of switching materials after formation, e.g. doping (shaping H10N70/061) · CPC title

• H10N70/023

  by chemical vapor deposition, e.g. MOCVD, ALD · CPC title

• H10N70/8833

  Binary metal oxides, e.g. TaOx · CPC title