Methods for manufacturing a semiconductor device having a non-ohmic contact formed between a semiconductor material and an electrically conductive contact layer

Patent metadata

Field	Value
Publication number	US-10199514-B2
Application number	US-201815865976-A
Country	US
Kind code	B2
Filing date	Jan 9, 2018
Priority date	Dec 17, 2014
Publication date	Feb 5, 2019
Grant date	Feb 5, 2019

Abstract

An embodiment of a method of manufacturing a semiconductor device includes providing a semiconductor material that comprises SiC and forming an electrically conductive contact layer on the semiconductor material. A non-ohmic contact is formed between the semiconductor material and the electrically conductive contact layer. The electrically conductive contact layer comprises a metal nitride with a nitrogen content between 10 to 50 atomic %. Additional embodiments of manufacturing a semiconductor device are described.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, the method comprising:
providing a semiconductor material that comprises SiC; and
forming an electrically conductive contact layer on the semiconductor material,

wherein a non-ohmic contact is formed between the semiconductor material and the electrically conductive contact layer,
wherein the electrically conductive contact layer comprises a metal nitride with a nitrogen content between 10 to 50 atomic %.

2. The method of claim 1 , wherein the electrically conductive contact layer is formed by a reactive sputtering process using nitrogen as a reactant.

3. The method of claim 2 , wherein a partial pressure of nitrogen during the reactive sputtering process is set so as to form the metal nitride as a mixed phase of MN and M 2 N, and wherein M denotes the metal.

4. The method of claim 3 , wherein a ratio of the partial pressure of nitrogen and a total pressure during the reactive sputtering process is in a range of 0.1 to 1.0.

5. The method of claim 3 , wherein the partial pressure of nitrogen during the reactive sputtering process is set so as to set a work function of the electrically conductive contact layer.

6. The method of claim 1 , wherein the metal nitride comprises a metal selected from the group consisting of molybdenum, titanium, tantalum and tungsten.

7. The method of claim 1 , wherein the metal nitride comprises two metals.

8. The method of claim 1 , wherein the metal nitride comprises molybdenum.

9. The method of claim 1 , wherein the metal nitride comprises a combination of a stoichiometric compound and a non-stoichiometric compound including a metal and nitrogen.

10. The method of claim 1 , wherein the metal nitride layer comprises a mixture of M x N y and at least one of MN and MN 2 , and wherein either x=1 and 0<y<3 or y=1 and 0<x<3.

11. The method of claim 1 , wherein the non-ohmic contact is a rectifying contact.

12. The method of claim 1 , wherein the non-ohmic contact is a Schottky contact.

13. The method of claim 12 , wherein the semiconductor material is a semiconductor body, wherein a doped portion is embedded in the semiconductor body, wherein the doped portion has a conductivity type opposite to a conductivity type of the semiconductor material, wherein the doped portion is in contact with the electrically conductive contact layer and with the semiconductor material, and wherein the doped portion has a conductivity type opposite to the conductivity type of the semiconductor material.

14. The method of claim 1 , wherein the nitrogen content of the electrically conductive contact layer is between 38 to 45 atomic %.

15. A method of manufacturing a semiconductor device, the method comprising:
providing a semiconductor material that has a bandgap in between at least 2 eV and at most 10 eV and comprises SiC; and
forming an electrically conductive contact layer that comprises a metal nitride on the semiconductor material,
wherein a non-ohmic contact is formed between the semiconductor material and the electrically conductive contact layer,
wherein forming the electrically conductive contact layer comprises selecting the composition ratio of the metal nitride,
wherein a composition ratio is selected such that a nitrogen content of the metal nitride is between 10 and 50 atomic %.

16. The method of claim 15 , wherein the nitrogen content of the metal nitride is between 38 to 45 atomic %.

17. The method of claim 15 , wherein the metal nitride directly contacts the semiconductor material.

18. A method of manufacturing a semiconductor device, the method comprising:
forming a contact layer in contact with a semiconductor material, the semiconductor material having a bandgap larger than 2 eV and less than 10 eV and comprising SiC, the contact layer comprising a metal nitride, a nitrogen content of the metal nitride being between 38 and 45 atomic %; and
forming a non-ohmic contact between the semiconductor material and the contact layer.

19. The method of claim 18 , wherein the metal nitride directly contacts the semiconductor material.

Assignees

• Infineon Technologies Austria Ag

Inventors

• Konrath Jens Peter
• Kern Ronny
• Krivec Stefan
• Schmid Ulrich
• Stoeber Laura

Classifications

• H10D64/0123

  to silicon carbide · CPC title

• H01L29/2003

  Electricity · mapped topic

• H01L29/1608

  Electricity · mapped topic

• H01L29/6606

  Electricity · mapped topic

• H01L29/868

  Electricity · mapped topic