Semiconductor device and manufacturing method
US-2015325698-A1 · Nov 12, 2015 · US
Semiconductor device comprising an active layer and a Schottky contact
US9305789B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9305789-B2 |
| Application number | US-201514693118-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 22, 2015 |
| Priority date | May 8, 2014 |
| Publication date | Apr 5, 2016 |
| Grant date | Apr 5, 2016 |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
A semiconductor device comprising at least one active layer on a substrate and a a Schottky contact to the at least one active layer, the Schottky contact comprising a body of at least titanium and nitrogen that is electrically coupled with the at least one active layer.
First claim
Opening claim text (preview).
The invention claimed is: 1. A semiconductor device comprising at least one active layer on a substrate and a Schottky contact to the at least one active layer, the Schottky contact comprising a body of at least titanium and nitrogen that is electrically coupled with the at least one active layer; in which the body of the Schottky contact comprises a first TiW sub-layer nearest to the at least one active layer, a second TiW sub-layer farthest from the at least one active layer, and a TiW(N) sub-layer in-between the first and second TiW sub-layers. 2. A semiconductor device according to claim 1 , in which the TiW(N) sub-layer has a thickness exceeding the combined thickness of the first and second TiW sub-layers such that the properties of the sub-layer stack are dominated by the TiW(N) sub-layer. 3. A semiconductor device according to claim 1 , in which the Schottky contact comprises a stack having an active layer portion adapted to be coupled to the at least one active layer and a connection portion coupled to the active layer portion for providing a connection to the Schottky contact, wherein the body forms the active layer portion and the connection portion has a lower resistance than the active layer portion. 4. A semiconductor device according to claim 3 , in which the connection portion comprises Aluminium. 5. A semiconductor device according to claim 1 , in which the Schottky contact is laterally delimited by an electrically insulating material. 6. A semiconductor device according to claim 1 , in which the semiconductor device comprises a gallium nitride active layer. 7. An integrated circuit including the semiconductor device as defined in claim 1 .
Assignees
Inventors
Classifications
of conductive or resistive materials · CPC title
- H10D64/0124Primary
to Group III-V semiconductors · CPC title
Nitride Group III-V materials, e.g. AlN or GaN · CPC title
- H10D64/64Primary
Electrodes comprising a Schottky barrier to a semiconductor · CPC title
being Group III-V materials, e.g. GaAs · CPC title
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- What does patent US9305789B2 cover?
- A semiconductor device comprising at least one active layer on a substrate and a a Schottky contact to the at least one active layer, the Schottky contact comprising a body of at least titanium and nitrogen that is electrically coupled with the at least one active layer.
- Who is the assignee on this patent?
- Nxp Bv
- What technology area does this patent fall under?
- Primary CPC classification H10D64/0124. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 05 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).