Semiconductor devices and methods of manufacturing
US-12166025-B2 · Dec 10, 2024 · US
US10199348B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10199348-B2 |
| Application number | US-201615194293-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 27, 2016 |
| Priority date | Apr 18, 2012 |
| Publication date | Feb 5, 2019 |
| Grant date | Feb 5, 2019 |
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The assembly of a chip ( 101 ) attached to a substrate ( 103 ) with wires ( 201 ) spanning from the chip to the substrate is loaded in a heated cavity ( 402 ) of a mold; the wire surfaces are coated with an adsorbed layer of molecules of a heterocyclic compound ( 302 ); a pressure chamber ( 404 ) of the mold is loaded with a solid pellet ( 410 ) of a packaging material including a polymerizable resin, the chamber being connected to the cavity; the vapor of resin molecules is allowed to spread from the chamber to the assembly inside the cavity during the time interval needed to heat the solid pellet for rendering it semi-liquid and to pressurize it through runners ( 403 ) before filling the mold cavity, whereby the resin molecules arriving in the cavity are cross-linked by the adsorbed heterocyclic compound molecules into an electrically insulating at least one monolayer of polymeric structures on the wire surfaces.
Opening claim text (preview).
We claim: 1. A semiconductor device comprising: a semiconductor chip assembled on a substrate and connected to the substrate by wire spans; the chip and wire spans encapsulated in a compound including a polymerized resin and inorganic fillers; and the surface of the wire spans covered by an insulating layer including the polymerized resin and a heterocyclic compound, wherein the insulating layer is between the surface of the wire spans and the compound. 2. The device of claim 1 wherein the heterocyclic compound is selected from a group including pyrrole (C 4 H 5 N 1 ), pyrazole and imidazole (C 3 H 4 N 2 ), containing a five-membered di-unsaturated ring with two non-adjacent nitrogen atoms as part of the ring; triazole (C 2 H 3 N 3 ), containing a five-membered ring with three nitrogen atoms as part of the ring; pentazolde, thiazole, isothiazole, and their derivatives. 3. The device of claim 1 wherein the polymerized resin is an epoxy resin selected from a group including bisphenol A and novalac. 4. The device of claim 1 wherein the compound further includes a curing agent selected from a group including amines, acid anhydrates, and phenol novalac resins. 5. The device of claim 4 wherein the inorganic fillers include grains of silicon dioxide, silicon nitride, and aluminum oxide. 6. The device of claim 1 wherein the substrate is a metal leadframe. 7. The device of claim 1 , wherein the heterocyclic compound is selected from a group consisting of pyrrole (C 4 H 5 N 1 ), pyrazole and imidazole (C 3 H 4 N 2 ), and a five-membered di-unsaturated ring with two non-adjacent nitrogen atoms as part of the ring. 8. A semiconductor device comprising: a semiconductor chip electrically connected to a substrate via a wire; an insulating layer including a polymerized resin and a heterocyclic compound covering portions of a surface of the wire; and a compound including the polymerized resin and inorganic fillers, the compound covering portions of the substrate, the semiconductor chip and the insulating layer, wherein the insulating layer is between the surface of the wire and the compound. 9. The device of claim 8 , wherein the wire includes one of copper and aluminum. 10. The device of claim 8 , wherein the heterocyclic compound is selected from a group including pyrrole (C 4 H 5 N 1 ), pyrazole and imidazole (C 3 H 4 N 2 ), and a five-membered di-unsaturated ring with two non-adjacent nitrogen atoms as part of the ring. 11. The device of claim 8 , wherein the inorganic fillers include grains of silicon dioxide, silicon nitride, and aluminum oxide. 12. A semiconductor device comprising: a semiconductor chip electrically connected to a substrate via a wire; an insulating layer including a monolayer of polymeric structure, the insulating layer covering portions of a surface of the wire; and a compound including a polymerized resin and inorganic fillers, the compound covering portions of the substrate, the semiconductor chip and the insulating layer, wherein the insulating layer is between the surface of the wire and the compound. 13. The device of claim 12 , wherein the monolayer of polymeric structure is formed in response to cross linking of molecules from a polymerizable resin and a heterocyclic compound. 14. The device of claim 12 , wherein the substrate is a lead frame including an attach pad that is attached to the semiconductor chip and at least one lead, the at least one lead connected to one end of the wire. 15. The device of claim 12 , wherein the wire includes one of copper and aluminum. 16. The device of claim 12 , wherein the heterocyclic compound is selected from a group consisting of pyrrole (C 4 H 5 N 1 ), pyrazole and imidazole (C 3 H 4 N 2 ), and a five-membered di-unsaturated ring with two non-adjacent nitrogen atoms as part of the ring.
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