Chemical mechanical polishing machine and polishing head assembly

Patent metadata

Field	Value
Publication number	US-10195715-B2
Application number	US-201614988367-A
Country	US
Kind code	B2
Filing date	Jan 5, 2016
Priority date	Feb 19, 2013
Publication date	Feb 5, 2019
Grant date	Feb 5, 2019

Abstract

A chemical mechanical polishing machine includes a polishing head assembly including a polishing head body and a membrane disposed at a bottom of the polishing head body. The bottom surface of the membrane includes a hydrophobic area and a hydrophilic area.

First claim

What is claimed is:

1. A polishing head assembly comprising:
a polishing head body;
a membrane disposed on a bottom surface of the polishing head body; and
a fixing ring disposed between an external side of the membrane,
wherein a bottom surface of the membrane comprises a hydrophobic area and a hydrophilic area, and
wherein the fixing ring is directly in contact with the external side of the membrane.

2. The polishing head assembly of claim 1 , wherein the membrane further comprises a plurality of holes passing through the membrane.

3. The polishing head assembly of claim 2 , wherein the polishing head body comprises a gas pipe passing through the polishing head body, and wherein the gas pipe is connected with the plurality of holes.

4. The polishing head assembly of claim 3 , further comprising a central shaft on the polishing head body, and
wherein the gas pipe extends through the central shaft.

5. The polishing head assembly of claim 2 , wherein the plurality of holes are disposed in the hydrophilic area.

6. The polishing head assembly of claim 1 , wherein the hydrophobic area is located on an outer portion of the bottom surface of the membrane and the hydrophilic area is located on an inner portion of the bottom surface of the membrane.

7. The polishing head assembly of claim 6 , wherein the membrane further comprises a hydrophobic center region located at a center portion of the bottom surface of the membrane.

8. The polishing head assembly of claim 1 , wherein the hydrophilic area is located on an outer portion of the bottom surface of the membrane and the hydrophobic area is located on an inner portion of the bottom surface of the membrane.

9. A polishing head assembly comprising:
a polishing head body;
a membrane disposed on a bottom surface of the polishing head body,
wherein a bottom surface of the membrane comprises a hydrophobic area and a hydrophilic area, and
wherein the hydrophobic area and the hydrophilic area are arranged in a fan-like form.

10. The polishing head assembly of claim 1 , wherein the bottom surface of the membrane is directly in contact with a backside of a wafer.

11. A polishing head assembly comprising:
a central shaft;
a polishing head body disposed at a bottom of the central shaft, the polishing head body having a gas pipe passing though the polishing head body; and
a membrane disposed on a bottom surface of the polishing head body, the membrane having a hole passing through the membrane to be connected with the gas pipe,
wherein a bottom surface of the membrane comprises a hydrophobic area and a hydrophilic area.

12. The polishing head assembly of claim 11 , wherein the polishing head body further comprises a groove in the bottom surface of the polishing head body, and wherein the membrane is disposed in the groove.

13. The polishing head assembly of claim 12 , further comprising a fixing ring disposed between the polishing head body and the membrane.

14. The polishing head assembly of claim 13 , wherein the fixing ring is disposed between an external side of the membrane and in inner side of the groove.

15. The polishing head assembly of claim 11 , wherein the hole is disposed in the hydrophilic area.

16. The polishing head assembly of claim 15 , wherein the hydrophobic area surrounds the hydrophilic area.

17. A chemical mechanical polishing machine comprising:
a turntable;
a polishing pad disposed on the turntable the polishing pad configured to be in contact with a front side of wafer and configured to polish the wafer;
and a polishing head assembly configured to be in contact with a backside of the wafer and configured to fix the wafer,
wherein the polishing head assembly comprises;
a polishing head body; and
a membrane disposed on a bottom surface of the polishing head body, wherein a bottom surface of the membrane comprises a hydrophobic area and a hydrophilic area.

18. The chemical mechanical polishing machine of claim 17 , wherein the membrane further comprises a plurality of holes passing through the membrane, and
wherein the plurality of holes are disposed in the hydrophilic area.

19. The chemical mechanical polishing machine of claim 18 , wherein the polishing head body comprises a gas pipe passing through the polishing head body, and
wherein the gas pipe is connected with the plurality of holes.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim In-Kwon
• Kim Kyung-Hyun
• Park Ki-Jong
• Bae Ki-Ho
• Lim Jong-Heun

Classifications

• B24B37/10

  for single side lapping · CPC title

• B24B37/30 Primary

  for single side lapping of plane surfaces · CPC title

• B24B37/32

  Retaining rings · CPC title

• B24B37/042

  operating processes therefor · CPC title

• B24B37/27

  Work carriers · CPC title