Method for synthesizing multilayer graphene

Patent metadata

Field	Value
Publication number	US-10184175-B2
Application number	US-201615094567-A
Country	US
Kind code	B2
Filing date	Apr 8, 2016
Priority date	Jun 16, 2015
Publication date	Jan 22, 2019
Grant date	Jan 22, 2019

Abstract

A method for synthesizing a multilayer graphene is provided. Specifically, the multilayer graphene can be produced by performing a step of forming a catalytic metal layer on a substrate, a step of heat-treating the catalytic metal layer on the substrate while supplying methane gas, and a step of synthesizing a multilayer graphene on the heat-treated catalytic metal layer. As described above, the multilayer graphene having a large area can be grown directly on a substrate, by heat-treating the catalytic metal layer using methane gas, prior to the step of synthesis of graphene. In addition, as the the number of layer of the multilayer graphene can be controlled by changing the synthesis time of the multilayer graphene, the multilayer graphene with the desired number of layers can be easily produced.

First claim

What is claimed is:

1. A method for synthesizing a multilayer graphene, comprising:
forming a catalytic metal layer on a substrate;
forming a pattern of asperities on a surface of the catalytic metal layer by subjecting the catalytic metal layer to a heat treatment by supplying methane gas,
wherein the pattern of asperities formed on the surface of the catalytic metal layer acts as a seed capable of growing the multilayer graphene; and

depositing the multilayer graphene onto the surface of the catalytic metal layer having the pattern of asperities, comprising heat treating the catalytic metal layer in a gas comprising a carbon source, hydrogen and argon for a time according to a number of layer of the multilayer graphene to be formed.

2. The method for synthesizing a multilayer graphene according to claim 1 , wherein the catalytic metal layer includes one or more selected from the group consisting of copper (Cu), nickel (Ni), iron (Fe), platinum (Pt), aluminum (Al), cobalt (Co), ruthenium (Ru), palladium (Pd), chromium (Cr), magnesium (Mg), manganese (Mn), gold (Au), silver (Ag), molybdenum (Mo), rhodium (Rh), tantalum (Ta), titanium (Ti), tungsten (W), uranium (U), vanadium (V), zirconium (Zr), and iridium (Ir), brass, bronze, and stainless steel.

3. The method for synthesizing a multilayer graphene according to claim 1 , wherein the step of forming a catalytic metal layer on a substrate is performed using one or more methods selected from the group consisting of an electron-beam evaporation deposition method, a thermal evaporation deposition method, a laser molecular beam epitaxy (L-MBE), a pulsed laser deposition (PLD), an electro-plating method and a sputtering method.

4. The method for synthesizing a multilayer graphene according to claim 1 , wherein subjecting the catalytic metal layer to the heat treatment comprises heating the substrate at a temperature ranging from 800° C. to 1100° C. for 10 to 120 minutes.

5. The method for synthesizing a multilayer graphene according to claim 1 , wherein depositing the multilayer graphene onto the surface of the catalytic metal layer comprises:
supplying a reaction gas comprising a carbon source onto the surface having the pattern of asperities of the catalytic metal layer to form the multilayer graphene;
causing the deposition of the multilayer graphene on the surface of the catalytic metal at a temperature ranging from a room temperature to 1200° C.; and
cooling the multilayer graphene.

6. The method for synthesizing a multilayer graphene according to claim 5 , wherein the carbon source includes one or more materials selected from the group consisting of a natural graphite, a synthetic graphite, a highly ordered pyrolytic graphite (HOPG), an activated carbon, a carbon monoxide, a carbon dioxide, a methane, an ethane, an ethylene, a methanol, an ethanol, an acetylene, a propane, a propylene, a butane, a butadiene, a pentane, a pentene, a cyclopentadiene, a hexane, a cyclohexane, a benzene, a toluene, a polymethyl methacrylate (PMMA), a polystyrene, a polyacrylonitrile (PAN), and PEDOT:PSS.

7. The method for synthesizing a multilayer graphene according to claim 1 , wherein, in the stage of synthesizing the multilayer graphene, the number of layer of the multilayer graphene is controlled by changing the synthesis time of the multilayer graphene.

8. The method for synthesizing a multilayer graphene according to claim 1 ,
wherein depositing the multilayer graphene onto the surface of the catalytic metal layer comprises performing deposition of the multilayer graphene for a time ranging from 10 minutes to 20 minutes, and
wherein the multilayer graphene is a bilayer graphene.

9. The method according to claim 1 , wherein forming the catalytic metal layer on the substrate comprises forming the catalytic metal layer directly on a substrate of an electronic device.

10. The method according to claim 1 , wherein the catalytic metal layer comprises at least one metal selected from the group consisting of aluminum (Al), ruthenium (Ru), palladium (Pd), chromium (Cr), magnesium (Mg), manganese (Mn), silver (Ag), molybdenum (Mo), rhodium (Rh), tantalum (Ta), titanium (Ti), tungsten (W), uranium (U), vanadium (V), zirconium (Zr), and iridium (Ir).

Assignees

• Gwangju Inst Science & Tech

Inventors

• Ham Moon-Ho
• Son Myung-Woo

Classifications

• H10P14/3406

  Carbon, e.g. diamond-like carbon · CPC title

• H10P14/3241

  being conductive materials · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• C01B32/186

  by chemical vapour deposition [CVD] · CPC title

• C23C16/0281

  of metallic sub-layers (C23C16/029 takes precedence) · CPC title