Synthesis of graphene by chemical vapor deposition

Patent metadata

Field	Value
Publication number	US-9388048-B1
Application number	US-57623409-A
Country	US
Kind code	B1
Filing date	Oct 8, 2009
Priority date	Oct 8, 2008
Publication date	Jul 12, 2016
Grant date	Jul 12, 2016

Abstract

Methods, materials and apparatus are described for synthesizing a monolayer or few-layers of graphene. Depositing the graphene can include, in some implementations, flowing hydrogen and carbon feedstock over a catalytic layer formed on a substrate.

First claim

What is claimed is:

1. A method for synthesizing graphene, the method comprising:
providing a substrate having a catalytic surface; and
flowing a dilute carbon feedstock over the catalytic surface of the substrate at a pressure equal to atmospheric pressure or lower to deposit a single planar layer of graphene or a thin stack of planar graphene layers on the catalytic surface of the substrate, the planar layer of graphene or the thin stack of planar graphene layers being parallel to the catalytic surface of the substrate, wherein the dilute carbon feedstock has more than 2% and less than 15% by volume carbon feedstock and comprises at least one of hydrogen, helium, and argon, the thin stack of planar graphene layers comprises five or fewer layers of graphene, wherein the single planar layer of graphene or the thin stack of planar graphene layers, when disposed on a polyethylene terephthalate (PET) substrate, has a conductance that is unperturbed after complete bending cycles, wherein the graphene is synthesized without the use of any plasma discharge.

2. The method of claim 1 , further comprising depositing a film comprising a catalytic material on the substrate to form the catalytic surface.

3. The method of claim 1 , wherein the substrate comprises a silicon wafer or a silicon wafer having a layer of silicon oxide thereon.

4. The method of claim 1 , wherein the substrate and the catalytic surface are formed of the same material.

5. The method of claim 4 , wherein the substrate is in the form of a foil or a plate.

6. The method of claim 4 , wherein the substrate and the catalytic surface are single crystalline nickel (111).

7. The method of claim 4 , wherein the substrate is sapphire.

8. The method of claim 4 , wherein the substrate is quartz.

9. The method of claim 1 , wherein the carbon feedstock comprises at least one of methane, ethylene, acetylene, propane, butane, ethanol, methanol, isopropanol, butanol, acetone, and aldehydes.

10. The method of claim 1 , wherein the catalytic surface comprises a metal.

11. The method of claim 10 , wherein the metal comprises at least one of nickel, iron, cobalt, manganese, molybdenum, iridium, gold, copper, silver, palladium, platinum, and lead.

12. The method of claim 10 , wherein the metal is in the form of a film deposited on the substrate.

13. The method of claim 1 , wherein the catalytic surface comprises a metal oxide.

14. The method of claim 13 , wherein the metal oxide comprises aluminum oxide or silicon oxide.

15. The method of claim 1 , further comprising:
transferring the single layer of graphene or the thin stack of graphene layers from the substrate to a target substrate, wherein the thin stack of graphene layers includes up to twenty graphene layers.

16. The method of claim 15 , wherein transferring the single layer of graphene or the thin stack graphene layers from the substrate to the target substrate comprises immersing the substrate into an etchant solution to remove the catalytic surface from the substrate, thereby yielding a free-standing catalytic film comprising the single layer of graphene or the thin stack of graphene layers.

17. The method of claim 16 , wherein the etchant solution is a nickel etchant solution.

18. The method of claim 15 , wherein transferring the single layer of graphene or the thin stack graphene layers from the substrate to the target substrate comprises:
depositing a polymer material on the single graphene layer or the thin stack of graphene layers;
immersing the substrate into an etchant solution to remove the polymer material from the substrate, thereby yielding a free-standing polymer film comprising the single graphene layer or the thin stack of graphene layers;
transferring the polymer film to the target substrate; and
dissolving the polymer film to leave the single graphene layer or the thin stack of graphene layers on the target surface.

19. The method of claim 18 , wherein the polymer material comprises poly (methyl methacrylate) (PMMA).

Assignees

• Zhou Chongwu
• De Arco Lewis Gomez
• Zhang Yi
• Univ Southern California

Inventors

• Zhou Chongwu
• De Arco Lewis Gomez
• Zhang Yi

Classifications

• B82B3/0009

  Forming specific nanostructures · CPC title

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title

• C01B31/04 Primary

  Chemistry & Metallurgy · mapped topic

• C01B32/186 Primary

  by chemical vapour deposition [CVD] · CPC title

• C01B2204/02

  Single layer graphene · CPC title