Imprinting method and curable composition for imprinting
US-9957340-B2 · May 1, 2018 · US
US10182500B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10182500-B2 |
| Application number | US-201515121531-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 10, 2015 |
| Priority date | Feb 26, 2014 |
| Publication date | Jan 15, 2019 |
| Grant date | Jan 15, 2019 |
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In an imprint process in a gaseous atmosphere containing a condensable gas, the curable composition for photoimprint is difficult to cure, the pattern is not fully formed to cause defects. The present invention relates to a curable composition for photoimprint in a gaseous atmosphere containing a condensable gas. The curable composition for photoimprint at least comprises the following component (A) and component (B): (A) polymerizable compound, and (B) photopolymerization initiator. Component (B) has a saturated solubility of less than 1% by weight in the condensable gas in a liquid state at 5° C. and 1 atm or has a Hansen distance (Ra) of larger than 7.6 to the condensable gas.
Opening claim text (preview).
The invention claimed is: 1. A method of producing a film having a pattern, the method comprising: arranging a curable composition for photoimprint on a substrate; bringing a mold having a mold pattern for transfer into contact with the curable composition for photoimprint in a gaseous atmosphere containing a condensable gas; irradiating the curable composition with light to form a cured film; and releasing the mold from the cured film, wherein the curable composition for photoimprint is a curable composition for photoimprint in a gaseous atmosphere containing a condensable gas, the curable composition at least comprising component (A) and component (B): (A) polymerizable compound; and (B) photopolymerization initiator, wherein component (B) has a saturated solubility of less than 1% by weight in the condensable gas in a liquid state at 5° C. and 1 atm or has a Hansen distance (Ra) of larger than 7.6 to the condensable gas. 2. The method of producing a film having a pattern according to claim 1 , wherein the gas containing a condensable gas is a gas mixture of a condensable gas and a noncondensable gas. 3. The method of producing a film having a pattern according to claim 2 , wherein the noncondensable gas is an inert gas. 4. The method of producing a film having a pattern according to claim 2 , wherein the noncondensable gas is helium. 5. The method of producing a film having a pattern according to claim 1 , wherein the condensable gas is a chlorofluorocarbon, a fluorocarbon, a hydrochlorofluorocarbon, a hydrofluorocarbon, or a hydrofluoroether. 6. The method of producing a film having a pattern according to claim 1 , wherein the condensable gas is 1,1,1,3,3-pentafluoropropane. 7. The method of producing a film having a pattern according to claim 1 , wherein the condensable gas condenses and liquefies by a pressure of the condensable gas when the curable composition for photoimprint penetrates into a gap between the substrate and the mold or into a concave of the fine pattern on the surface of the mold in the step of bringing the mold into contact with the curable composition. 8. The method of producing a film having a pattern according to claim 1 , wherein the mold pattern of the mold has a quartz surface. 9. A method of producing an optical component, the method comprising: producing a film having a pattern on a substrate by a method of producing a film according to claim 1 . 10. A method of producing an optical component, the method comprising: producing a film having a pattern on a substrate by a method of producing a film according to claim 1 ; and subjecting the substrate to etching or ion implantation using the film having a pattern as a mask. 11. A method of producing a circuit board, the method comprising: producing a film having a pattern on a substrate by a method of producing a film according to claim 1 ; subjecting the substrate to etching or ion implantation using the film having a pattern as a mask; and forming an electronic member. 12. A method of producing an electronic component, the method comprising: producing a circuit board by the method of producing a circuit board according to claim 11 ; and connecting the circuit board to a control mechanism for controlling the circuit board. 13. The method of producing a film having a pattern according to claim 1 , wherein component (A) is a (meth)acrylic monomer. 14. The method of producing a film having a pattern according to claim 1 , wherein component (A) includes a monofunctional (meth)acrylic monomer and a polyfunctional (meth)acrylic monomer. 15. The method of producing a film having a pattern according to claim 1 , wherein component (A) has a Hansen distance (Ra) of larger than 4.0 to the condensable gas. 16. The method of producing a film having a pattern according to claim 1 , wherein the gas containing the condensable gas is a gas mixture of a condensable gas and helium. 17. The method of producing a film having a pattern according to claim 1 , wherein the condensable gas is a chlorofluorocarbon, a fluorocarbon, a hydrochlorofluorocarbon, a hydrofluorocarbon, or a hydrofluoroether. 18. The method of producing a film having a pattern according to claim 1 , wherein component (B) is an acylphosphine oxide compound. 19. The method of producing a film having a pattern according to claim 18 , wherein component (B) is represented by Formula (1): 20. The method of producing a film having a pattern according to claim 1 , wherein component (B) is an aminoalkylphenone compound. 21. The method of producing a film having a pattern according to claim 20 , wherein component (B) is represented by Formula (2): 22. The method of producing a film having a pattern according to claim 1 , further comprising component (C): (C) sensitizer, wherein component (C) has a Hansen distance (Ra) of larger than 7.6 to the condensable gas. 23. The method of producing a film having a pattern according to claim 22 , wherein component (C) is a benzophenone compound. 24. The method of producing a film having a pattern according to claim 22 , wherein component (C) is represented by Formula (4):
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