Semiconductor devices and semiconductor packages

Patent metadata

Field	Value
Publication number	US-10181448-B2
Application number	US-201615076831-A
Country	US
Kind code	B2
Filing date	Mar 22, 2016
Priority date	Mar 22, 2016
Publication date	Jan 15, 2019
Grant date	Jan 15, 2019

Abstract

A semiconductor device includes a semiconductor element, a trace disposed adjacent to a surface of the semiconductor element, a bonding pad disposed adjacent to the surface of the semiconductor element and connected to the trace, and a pillar disposed on the bonding pad. The pillar includes a first end wall, a second end wall opposite the first end wall, a first side wall, and a second side wall opposite the first side wall. The first side wall and the second side wall connect the first end wall to the second end wall. One or both of the first side wall and the second side wall incline inwardly from the first end wall to the second end wall. The pillar is disposed on the bonding pad such that the first end wall is closer to the trace than is the second end wall.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a semiconductor element;
a trace disposed adjacent to a surface of the semiconductor element and including a bonding pad, wherein the bonding pad is a contact pad of the trace; and
a pillar disposed on the bonding pad, the pillar including:
a first end wall,
a second end wall opposite the first end wall,
a first side wall,
a second side wall opposite the first side wall, and
an extended portion at a corner of the pillar towards the trace,

wherein the first side wall and the second side wall connect the first end wall to the second end wall, and
one or both of the first side wall and the second side wall incline inwardly in a plan view from the first end wall to the second end wall;
wherein the pillar is disposed on the bonding pad such that the first end wall is closer to the trace than is the second end wall.

2. The semiconductor device of claim 1 , wherein the first end wall is a convex wall comprising a first radius of curvature and the second end wall is a convex wall comprising a second radius of curvature, wherein the first radius of curvature is greater than the second radius of curvature.

3. The semiconductor device of claim 1 , wherein a shape of the first end wall represents an arc of a first circle and a shape of the second end wall represents an arc of a second circle.

4. The semiconductor device of claim 3 , wherein the first circle has a first radius R 1 and the second circle has a second radius R 2 , and wherein a relationship between R 1 and R 2 is defined by the following equation:
θ 1 =sin −1 (( R 1 −R 2 )/ D )

wherein the angle θ 1 is from 0° to about 45° and D represents a distance between an origin of the first circle and an origin of the second circle.

5. The semiconductor device of claim 4 , wherein a ratio of R 1 to R 2 is greater than 1:1.

6. The semiconductor device of claim 4 , wherein a ratio of R 1 to R 2 is from about 1.1:1 to about 2.5:1.

7. The semiconductor device of claim 1 , wherein a center line of the pillar along a length of the pillar forms an angle θ 2 with a center line of the trace.

8. The semiconductor device of claim 7 , wherein the angle θ 2 is from 0° to about 45°.

9. The semiconductor device of claim 1 , wherein one or both of the first side wall and the second side wall are concave.

10. The semiconductor device of claim 1 , wherein one or both of the first side wall and the second side wall are convex.

11. The semiconductor device of claim 1 , wherein one or both of the first end wall and the second end wall are substantially flat.

12. The semiconductor device of claim 1 , wherein one or both of the first end wall and the second end wall are concave.

13. The semiconductor device of claim 1 , wherein at least a portion of the bonding pad is wider than a remaining portion of the trace.

14. The semiconductor device of claim 1 , wherein the pillar includes a wide portion that is positioned towards the trace.

15. A semiconductor device, comprising:
a semiconductor element;
a trace disposed adjacent to a surface of the semiconductor element and including a bonding pad, wherein the bonding pad is a contact pad of the trace; and
a pillar disposed on the bonding pad, the pillar comprising a first end adjacent to the trace and a second end away from the trace, wherein the first end is wider than the second end;
wherein the first end comprises a first radius of curvature and the second end comprises a second radius of curvature, and the first radius of curvature is greater than the second radius of curvature,
wherein the pillar further comprises an extended portion at a corner of the pillar towards the trace.

16. The semiconductor device of claim 15 , wherein a shape of the first end represents an arc of a first circle and a shape of the second end represents an arc of a second circle.

17. The semiconductor device of claim 16 , wherein the first circle has the first radius R 1 and the second circle has the second radius R 2 , and wherein a relationship between R 1 and R 2 is defined by the following equation:
θ 1 =sin −1 (( R 1 −R 2 )/ D )

wherein the angle θ 1 is from 0° to about 45°, and D represents the distance between an origin of the first circle and an origin of the second circle.

18. The semiconductor device of claim 17 , wherein a ratio of R 1 to R 2 is greater than 1:1.

19. The semiconductor device of claim 17 , wherein a ratio of R 1 to R 2 is from about 1.1:1 to about 2.5:1.

20. The semiconductor device of claim 15 , wherein a center line of the pillar along a length of the pillar forms an angle θ 2 with a center line of the trace.

21. The semiconductor device of claim 20 , wherein the angle θ 2 is greater than 0° and up to about 45°.

Assignees

• Advanced Semiconductor Eng

Inventors

• Hung Chih-Pin
• Chen Dao-Long
• Chiu Ying-Ta
• Yang Ping-Feng

Classifications

• H10W72/952

  comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title

• H10W72/29

  Bond pads specially adapted therefor · CPC title

• H10W72/019

  of bond pads · CPC title

• H10W72/01953

  by etching · CPC title

• H10W72/01938

  in gaseous form, e.g. by CVD or PVD · CPC title