Method of manufacturing a device with a cavity

Patent metadata

Field	Value
Publication number	US-10171007-B2
Application number	US-201715846727-A
Country	US
Kind code	B2
Filing date	Dec 19, 2017
Priority date	Apr 23, 2008
Publication date	Jan 1, 2019
Grant date	Jan 1, 2019

Abstract

A method includes providing a substrate having a first sacrificial oxide region, the substrate comprising a first interconnect layer, the first interconnect layer comprising the first sacrificial oxide region. The method further includes covering the first sacrificial oxide region with a first porous layer being permeable to a vapor hydrofluoric acid (HF) etchant and selectively etching the first sacrificial oxide region through the first porous layer using the vapor HF etchant.

First claim

What is claimed is:

1. A method, comprising:
providing a substrate having a first sacrificial oxide region, the substrate comprising a first interconnect layer, the first interconnect layer comprising the first sacrificial oxide region;
covering the first sacrificial oxide region with a first porous layer being permeable to a vapor hydrofluroic acid (HF) etchant;
creating a second interconnect layer over the first interconnect layer, wherein the second interconnect layer comprises a second sacrificial oxide region;
covering the second sacrificial oxide region with a second porous layer, wherein the second porous layer is permeable to the vapor HF etchant; and
selectively etching the first sacrificial oxide region through the first porous layer using the vapor HF etchant, wherein the selectively etching includes applying the vapor HF etchant through the first and second porous layers to etch both the first and second sacrificial oxide regions.

2. The method of claim 1 , wherein the first porous layer comprises carbon-doped oxide.

3. The method of claim 2 , further comprising:
densifying the first porous layer before the selectively etching.

4. The method of claim 1 , wherein the first porous layer comprises non-densified carbon-doped oxide and remains non-densified before the selectively etching.

5. The method of claim 1 ,
wherein the first and second sacrificial oxide regions are separated by the first porous layer.

6. The method of claim 5 , wherein each of the first and second porous layers comprises a non-densified carbon-doped oxide and remains non-densified before the selectively etching.

7. The method of claim 1 , wherein the covering of the first sacrificial oxide region with the first porous layer includes depositing the first porous layer using chemical vapor depostion.

8. The method of claim 1 , wherein the first interconnect layer includes copper or aluminum.

9. The method of claim 1 , wherein the first interconnect layer includes a conductive feature at a top surface of the substrate, further comprising:
depositing a passivation layer over the conductive feature before the covering of the first sacrificial oxide region with the first porous layer.

10. A method, comprising:
providing a substrate having a first sacrificial oxide region at a surface of the substrate, the substrate comprising a first interconnect layer, the first interconnect layer comprising the first sacrificial oxide region;
covering the first sacrificial oxide region with a first porous layer being permeable to a vapor hydrofluroic acid (HF) etchant;
creating a second interconnect layer over the first interconnect layer, wherein the second interconnect layer comprises a second sacrificial oxide region, and wherein the first and second sacrificial oxide regions are separated by the first porous layer;
covering the second sacrificial oxide region with a second porous layer, wherein the second porous layer is permeable to the vapor HF etchant; and
selectively etching the first and second sacrificial oxide regions through the first and second porous layers using the vapor HF etchant.

11. The method of claim 10 , wherein the first and second porous layers comprise a non-densified carbon-doped oxide.

12. The method of claim 10 , wherein each of the covering of the first sacrificial oxide region and the covering of the second sacrificial oxide region is not followed by plasma treatment of the first and second porous layers before the selectively etching.

13. The method of claim 10 , wherein the selectively etching comprises a single etch step to etch both the first and second sacrificial oxide regions.

14. The method of claim 10 , wherein the covering of the first sacrificial oxide region with the first porous layer includes depositing the first porous layer using chemical vapor depostion.

15. The method of claim 10 , wherein the covering of the second sacrificial oxide region with the second porous layer includes depositing the second porous layer using chemical vapor depostion.

16. The method of claim 10 , wherein the first interconnect layer includes a conductive feature at the surface of the substrate, further comprising:
depositing a passivation layer over the conductive feature before the covering of the first sacrificial oxide region with the first porous layer.

17. The method of claim 10 , wherein the second interconnect layer includes a conductive feature at a top surface of the second interconnect layer, further comprising:
depositing a passivation layer over the conductive feature before the covering of the second sacrificial oxide region with the second porous layer.

18. A method, comprising:
providing a substrate having a first sacrificial oxide region;
depositing a first porous layer over the first sacrificial oxide region, the first porous layer being permeable to a vapor hydrofluroic acid (HF) etchant;
depositing a second sacrificial oxide region over the first porous layer;
depositing a second porous layer over the second sacrificial oxide region, the second porous layer being permeable to the vapor HF etchant; and
selectively etching the first and second sacrificial oxide regions through the first and second porous layers using the vapor HF etchant.

19. The method of claim 18 , wherein each of the first and second porous layers comprises a carbon-doped oxide.

20. The method of claim 18 , wherein each of the first and second porous layers comprises a non-densified carbon-doped oxide and remains non-densified before the selectively etching.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Verheijden Greja Johanna Adriana Maria
• Daamen Roel
• Koops Gerhard

Classifications

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P14/6922

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title

• H10W20/0888

  wherein via-level dielectrics are compositionally different than trench-level dielectrics · CPC title

• H10W20/037

  the barrier, adhesion or liner layers being on top of a main fill metal · CPC title