Etching solution capable of suppressing particle appearance

Patent metadata

Field	Value
Publication number	US-10167425-B2
Application number	US-201715584208-A
Country	US
Kind code	B2
Filing date	May 2, 2017
Priority date	May 4, 2016
Publication date	Jan 1, 2019
Grant date	Jan 1, 2019

Abstract

The present disclosure relates to an etching solution capable of suppressing particle appearance including a first silane compound in which three or more hydrophilic functional groups are independently bonded to a silicon atom and a second silane compound in which one or two hydrophilic functional groups are independently bonded to a silicon atom.

First claim

What is claimed is:

1. An etching solution for suppressing particle appearance comprising:
an aqueous solution including phosphoric acid;
a first silane compound including 1 to 6 silicon atoms where at least one silicon atom is bonded to three or more hydrophilic functional groups, wherein a concentration of the first silane compound in the etching solution ranges from 100 ppm to 10,000 ppm;
a second silane compound including 1 to 6 silicon atoms where the number of hydrophilic functional groups bonded to one silicon atom is a maximum of 2, wherein a concentration of the second silane compound in the etching solution ranges from 100 ppm to 30,000 ppm; and
a fluorine-containing compound.

2. The etching solution capable of suppressing particle appearance of claim 1 , wherein the hydrophilic functional group is a hydroxyl or a functional group substitutable with a hydroxyl group under a pH condition of the etching solution,
wherein the functional group substitutable with a hydroxy group under a pH condition of the etching solution is selected from the group consisting of an amino group, a halogen group, a sulfonic group, a phosphonic group, a phosphoric group, a thiol group, an alkoxy group, an amide group, an ester group, an acid anhydride group, an acyl halide group, a cyano group, a carboxyl group, and an azole group.

3. The etching solution capable of suppressing particle appearance of claim 1 , wherein the first silane compound is represented by Chemical Formula 1 below or Chemical Formula 2 below:

in Chemical Formula 1,
R 1 to R 4 are each independently a hydrophilic functional group or a functional group selected from the group consisting of hydrogen, C 1 -C 10 alkyl, C 6 -C 12 cycloalkyl, C 2 -C 10 heteroalkyl including at least one heteroatom, C 2 -C 10 alkenyl, C 2 -C 10 alkynyl, C 1 -C 10 haloalkyl, C 1 -C 10 aminoalkyl, aryl, heteroaryl, aralkyl, silyloxy, and siloxane, and

in Chemical Formula 2,
R 5 to R 20 are each independently a hydrophilic functional group or a functional group selected from the group consisting of hydrogen, C 1 -C 10 alkyl, C 6 -C 12 cycloalkyl, C 2 -C 10 heteroalkyl including at least one heteroatom, C 2 -C 10 alkenyl, C 2 -C 10 alkynyl, C 1 -C 10 haloalkyl, C 1 -C 10 aminoalkyl, aryl, heteroaryl, aralkyl, silyloxy, and siloxane, and
n is an integer of 1 to 5.

4. The etching solution capable of suppressing particle appearance of claim 3 , wherein the hydrophilic functional group is selected from the group consisting of a hydroxyl group, an amino group, a halogen group, a sulfonic group, a phosphonic group, a phosphoric group, a thiol group, an alkoxy group, an amide group, an ester group, an acid anhydride group, an acyl halide group, a cyano group, a carboxyl group, and an azole group.

5. The etching solution capable of suppressing particle appearance of claim 1 , wherein the second silane compound is represented by Chemical Formula 3 below or Chemical Formula 4 below:

in Chemical Formula 3,
R 11 to R 14 are each independently a hydrophilic functional group or a functional group selected from the group consisting of hydrogen, C 1 -C 10 alkyl, C 6 -C 12 cycloalkyl, C 2 -C 10 heteroalkyl including at least one heteroatom, C 2 -C 10 alkenyl, C 2 -C 10 alkynyl, C 1 -C 10 haloalkyl, C 1 -C 10 aminoalkyl, aryl, heteroaryl, aralkyl, silyloxy, and siloxane, and

in Chemical Formula 4,
R 15 to R 20 are each independently a hydrophilic functional group or a functional group selected from the group consisting of hydrogen, C 1 -C 10 alkyl, C 6 -C 12 cycloalkyl, C 2 -C 10 heteroalkyl including at least one heteroatom, C 2 -C 10 alkenyl, C 2 -C 10 alkynyl, C 1 -C 10 haloalkyl, C 1 -C 10 aminoalkyl, aryl, heteroaryl, aralkyl, silyloxy, and siloxane, and
n is an integer of 1 to 5.

6. The etching solution capable of suppressing particle appearance of claim 5 , wherein the hydrophilic functional group is selected from the group consisting of a hydroxyl group, an amino group, a halogen group, a sulfonic group, a phosphonic group, a phosphoric group, a thiol group, an alkoxy group, an amide group, an ester group, an acid anhydride group, an acyl halide group, a cyano group, a carboxyl group, and an azole group.

7. The etching solution capable of suppressing particle appearance of claim 1 , wherein the fluorine-containing compound is at least one selected from the group consisting of hydrogen fluoride, ammonium fluoride, ammonium bifluoride, and ammonium hydrogen fluoride.

8. The etching solution capable of suppressing particle appearance of claim 1 , wherein the fluorine-containing compound is a compound in which an organic cation and a fluorine-based anion are ionically bonded.

9. The etching solution capable of suppressing particle appearance of claim 8 , wherein the organic cation is selected from the group consisting of alkylammonium, alkylpyrrolium, alkylimidazolium, alkylpyrazolium, alkyloxazolium, alkylthiazolium, alkylpyridinium, alkylpyrimidinium, alkylpyridazinium, alkylpyrazinium, alkylpyrrolidinium, alkylphosphonium, alkylmorpholinium, and alkylpiperidinium.

10. The etching solution capable of suppressing particle appearance of claim 8 , wherein the fluorine-based anion is selected from the group consisting of fluoride, fluorophosphate, fluoroalkyl-fluorophosphate, fluoroborate, and fluoroalkyl-fluoroborate.

Assignees

• Oci Co Ltd

Inventors

• Yoo Hoseong
• Han Seunghyun
• Chang Wook
• Kim Yongil

Classifications

• H10P90/126

  by chemical etching · CPC title

• H10P70/23

  during, before or after processing of insulating materials · CPC title

• H10P50/283

  by chemical means · CPC title

• C07C69/34

  Esters of acyclic saturated polycarboxylic acids having an esterified carboxyl group bound to an acyclic carbon atom · CPC title

• H01L21/02019

  Electricity · mapped topic