Manufacturing method of semiconductor device including transistor

Patent metadata

Field	Value
Publication number	US-10164075-B2
Application number	US-201715825153-A
Country	US
Kind code	B2
Filing date	Nov 29, 2017
Priority date	Jul 15, 2014
Publication date	Dec 25, 2018
Grant date	Dec 25, 2018

Abstract

The transistor includes a gate electrode, a gate insulating film over the gate electrode, an oxide semiconductor film over the gate insulating film, a source electrode and a drain electrode electrically connected to the oxide semiconductor film. The oxide semiconductor film includes a first oxide semiconductor film on the gate electrode side and a second oxide semiconductor film over the first oxide semiconductor film. The first oxide semiconductor film includes a first region in which an atomic proportion of In is larger than that of M (M is Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf). The second oxide semiconductor film includes a second region in which an atomic proportion of In is smaller than that of the first oxide semiconductor film. The second region includes a portion thinner than the first region.

First claim

The invention claimed is:

1. A manufacturing method of a semiconductor device comprising a transistor, comprising:
forming a first oxide semiconductor film over a substrate;
forming a second oxide semiconductor film over the first oxide semiconductor film;
forming a source electrode and a drain electrode over the second oxide semiconductor film;
forming an oxide insulating film over the second oxide semiconductor film;
forming an oxide conductive film over the oxide insulating film;
adding oxygen into the oxide insulating film through the oxide conductive film; and
removing the oxide conductive film, and
wherein the step of forming the oxide insulating film is performed at a temperature higher than or equal to 180° C. and lower than or equal to 350° C. in a plasma enhanced chemical vapor deposition apparatus.

2. The manufacturing method of a semiconductor device, according to claim 1 , wherein the temperature in the step of forming the oxide insulating film is the highest in the manufacturing steps of the transistor.

3. The manufacturing method of a semiconductor device, according to claim 1 , wherein the first oxide semiconductor film and the second oxide semiconductor film each comprise oxygen, In, Zn, and M where M is Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf.

4. The manufacturing method of a semiconductor device, according to claim 1 ,
wherein the first oxide semiconductor film and the second oxide semiconductor film each comprise a crystal part, and
wherein the crystal part comprises a portion in which a c-axis of the crystal part is parallel to a normal vector of a surface on which the first oxide semiconductor film is formed or a normal vector of a surface on which the second oxide semiconductor film is formed.

5. A manufacturing method of a semiconductor device comprising a transistor, comprising:
forming a first oxide semiconductor film over a substrate;
forming a second oxide semiconductor film over the first oxide semiconductor film;
forming a source electrode and a drain electrode over the second oxide semiconductor film;
forming an oxide insulating film over the second oxide semiconductor film;
forming an oxide conductive film over the oxide insulating film;
adding oxygen into the oxide insulating film through the oxide conductive film; and
removing the oxide conductive film.

6. The manufacturing method of a semiconductor device, according to claim 5 , wherein the temperature in the step of forming the oxide insulating film is the highest in the manufacturing steps of the transistor.

7. The manufacturing method of a semiconductor device, according to claim 5 , wherein the first oxide semiconductor film and the second oxide semiconductor film each comprise oxygen, In, Zn, and M where M is Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf.

8. The manufacturing method of a semiconductor device, according to claim 5 ,
wherein the first oxide semiconductor film and the second oxide semiconductor film each comprise a crystal part, and
wherein the crystal part comprises a portion in which a c-axis of the crystal part is parallel to a normal vector of a surface on which the first oxide semiconductor film is formed or a normal vector of a surface on which the second oxide semiconductor film is formed.

9. A manufacturing method of a semiconductor device comprising a transistor, comprising:
forming a first oxide semiconductor film over a substrate;
forming a second oxide semiconductor film over the first oxide semiconductor film;
forming a source electrode and a drain electrode over the second oxide semiconductor film;
forming an oxide insulating film over the second oxide semiconductor film;
forming an oxide conductive film over the oxide insulating film; and
adding oxygen into the oxide insulating film through the oxide conductive film.

10. The manufacturing method of a semiconductor device, according to claim 9 , wherein the temperature in the step of forming the oxide insulating film is the highest in the manufacturing steps of the transistor.

11. The manufacturing method of a semiconductor device, according to claim 9 , wherein the first oxide semiconductor film and the second oxide semiconductor film each comprise oxygen, In, Zn, and M where M is Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf.

12. The manufacturing method of a semiconductor device, according to claim 9 ,
wherein the first oxide semiconductor film and the second oxide semiconductor film each comprise a crystal part, and
wherein the crystal part comprises a portion in which a c-axis of the crystal part is parallel to a normal vector of a surface on which the first oxide semiconductor film is formed or a normal vector of a surface on which the second oxide semiconductor film is formed.

Assignees

• Semiconductor Energy Lab

Inventors

• Koezuka Junichi
• Okazaki Kenichi
• Kurosaki Daisuke
• Shima Yukinori
• Hosaka Yasuharu

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6927

  the material being a silicon oxynitride, e.g. SiON or SiON:H · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title