Semiconductor device, manufacturing method thereof, and display device including the semiconductor device

Patent metadata

Field	Value
Publication number	US-9837512-B2
Application number	US-201615340031-A
Country	US
Kind code	B2
Filing date	Nov 1, 2016
Priority date	Jul 15, 2014
Publication date	Dec 5, 2017
Grant date	Dec 5, 2017

Abstract

The transistor includes a gate electrode, a gate insulating film over the gate electrode, an oxide semiconductor film over the gate insulating film, a source electrode and a drain electrode electrically connected to the oxide semiconductor film. The oxide semiconductor film includes a first oxide semiconductor film on the gate electrode side and a second oxide semiconductor film over the first oxide semiconductor film. The first oxide semiconductor film includes a first region in which an atomic proportion of In is larger than that of M (M is Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf). The second oxide semiconductor film includes a second region in which an atomic proportion of In is smaller than that of the first oxide semiconductor film. The second region includes a portion thinner than the first region.

First claim

The invention claimed is:

1. A manufacturing method of a semiconductor device comprising a transistor, comprising:
forming a gate electrode over a substrate;
forming a gate insulating film over the gate electrode;
forming a first oxide semiconductor film over the gate insulating film;
forming a second oxide semiconductor film over the first oxide semiconductor film;
forming a source electrode and a drain electrode over the second oxide semiconductor film;
forming an oxide insulating film over the second oxide semiconductor film;
forming an oxide conductive film over the oxide insulating film;
adding oxygen into the oxide insulating film through the oxide conductive film; and
removing the oxide conductive film,
wherein the step of forming the source electrode and the drain electrode is performed so that a region of the second oxide semiconductor film becomes thinner than the first oxide semiconductor film,
wherein the step of forming the oxide insulating film is performed at a temperature higher than or equal to 180° C. and lower than or equal to 350° C. in a plasma enhanced chemical vapor deposition apparatus, and
wherein the temperature in the step of forming the oxide insulating film is the highest in the manufacturing steps of the transistor.

2. The manufacturing method of a semiconductor device, according to claim 1 ,
wherein the gate electrode is a first gate electrode and the gate insulating film is a first gate insulating film,
wherein the oxide insulating film functions as a second gate insulating film, and
wherein a second gate electrode is formed over the oxide insulating film.

3. The manufacturing method of a semiconductor device, according to claim 1 , wherein the first oxide semiconductor film and the second oxide semiconductor film each comprise oxygen, In, Zn, and M where M is Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf.

4. The manufacturing method of a semiconductor device, according to claim 1 ,
wherein the first oxide semiconductor film and the second oxide semiconductor film each comprise a crystal part, and
wherein the crystal part comprises a portion in which a c-axis of the crystal part is parallel to a normal vector of a surface on which the first oxide semiconductor film is formed or a normal vector of a surface on which the second oxide semiconductor film is formed.

5. A manufacturing method of a semiconductor device comprising a transistor, comprising:
forming a gate electrode over a substrate;
forming a gate insulating film over the gate electrode;
forming a first oxide semiconductor film over the gate insulating film;
forming a second oxide semiconductor film over the first oxide semiconductor film;
forming a source electrode and a drain electrode over the second oxide semiconductor film;
forming an oxide insulating film over the second oxide semiconductor film;
forming an oxide conductive film over the oxide insulating film;
adding oxygen into the oxide insulating film through the oxide conductive film; and
removing the oxide conductive film,
wherein the step of forming the source electrode and the drain electrode is performed so that a region of the second oxide semiconductor film becomes thinner than the first oxide semiconductor film, and
wherein a temperature in the step of forming the oxide insulating film is the highest in the manufacturing steps of the transistor.

6. The manufacturing method of a semiconductor device, according to claim 5 ,
wherein the gate electrode is a first gate electrode and the gate insulating film is a first gate insulating film,
wherein the oxide insulating film functions as a second gate insulating film, and
wherein a second gate electrode is formed over the oxide insulating film.

7. The manufacturing method of a semiconductor device, according to claim 5 , wherein the first oxide semiconductor film and the second oxide semiconductor film each comprise oxygen, In, Zn, and M where M is Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf.

8. The manufacturing method of a semiconductor device, according to claim 5 , wherein the first oxide semiconductor film and the second oxide semiconductor film each comprise a crystal part, and
wherein the crystal part comprises a portion in which a c-axis of the crystal part is parallel to a normal vector of a surface on which the first oxide semiconductor film is formed or a normal vector of a surface on which the second oxide semiconductor film is formed.

9. A manufacturing method of a semiconductor device comprising a transistor, comprising:
forming a gate electrode over a substrate;
forming a gate insulating film over the gate electrode;
forming a first oxide semiconductor film over the gate insulating film;
forming a second oxide semiconductor film over the first oxide semiconductor film;
forming a source electrode and a drain electrode over the second oxide semiconductor film;
forming an oxide insulating film over the second oxide semiconductor film;
forming an oxide conductive film over the oxide insulating film; and
adding oxygen into the oxide insulating film through the oxide conductive film,
wherein the step of forming the source electrode and the drain electrode is performed so that a region of the second oxide semiconductor film becomes thinner than the first oxide semiconductor film, and
wherein a temperature in the step of forming the oxide insulating film is the highest in the manufacturing steps of the transistor.

10. The manufacturing method of a semiconductor device, according to claim 9 ,
wherein the gate electrode is a first gate electrode and the gate insulating film is a first gate insulating film,
wherein the oxide insulating film functions as a second gate insulating film, and
wherein a second gate electrode is formed over the oxide insulating film.

11. The manufacturing method of a semiconductor device, according to claim 9 , wherein the first oxide semiconductor film and the second oxide semiconductor film each comprise oxygen, In, Zn, and M where M is Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf.

12. The manufacturing method of a semiconductor device, according to claim 9 ,
wherein the first oxide semiconductor film and the second oxide semiconductor film each comprise a crystal part, and
wherein the crystal part comprises a portion in which a c-axis of the crystal part is parallel to a normal vector of a surface on which the first oxide semiconductor film is formed or a normal vector of a surface on which the second oxide semiconductor film is formed.

Assignees

• Semiconductor Energy Lab

Inventors

• Koezuka Junichi
• Okazaki Kenichi
• Kurosaki Daisuke
• Shima Yukinori
• Hosaka Yasuharu

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6927

  the material being a silicon oxynitride, e.g. SiON or SiON:H · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title