Group III nitride bulk crystals and their fabrication method

Patent metadata

Field	Value
Publication number	US-10161059-B2
Application number	US-201514720815-A
Country	US
Kind code	B2
Filing date	May 24, 2015
Priority date	Apr 7, 2006
Publication date	Dec 25, 2018
Grant date	Dec 25, 2018

Abstract

In one instance, the invention provides a bulk crystal of group III nitride having a thickness of more than 1 mm without cracking above the sides of a seed crystal. This bulk group III nitride crystal is expressed as Ga x1 Al y1 In 1-x1-y1 N (0≤x1≤1, 0≤x1+y1≤1) and the seed crystal is expressed as Ga x2 Al y2 In 1-x2-y2 N (0≤x2≤1, 0≤x2+y2≤1). The bulk crystal of group III nitride can be grown in supercritical ammonia or a melt of group III metal using at least one seed crystal having basal planes of c-orientation and sidewalls of m-orientation. By exposing only c-planes and m-planes in this instance, cracks originating from the sides of the seed crystal are avoided.

First claim

What is claimed is:

1. A method of growing a bulk crystal of group III nitride having a composition of Ga x1 Al y1 In 1-x1-y1 N (0≤x1≤1, 0≤x1+y1≤1) comprising,
(a) preparing using heteroepitaxial deposition at least one seed crystal of Ga x2 Al y2 In 1-x2-y2 N (0≤x2≤1, 0≤x2+y2≤1) having basal planes of c-orientation with miscut angle less than 5 degrees and all exposed sidewalls of m-orientation with miscut angle less than 5 degrees, wherein the seed crystal is formed by a vapor phase method and at least one of the sidewalls is obtained by cleavage along m-plane or mechanical dicing along m-plane and removal of mechanical damage;
(b) growing the bulk crystal of group III nitride on at least one basal plane of the seed crystal in supercritical ammonia without creating cracks above the sidewalls of the seed crystal, wherein the bulk crystal has a thickness greater than 1 mm.

2. A method according to claim 1 wherein the seed crystal has a hexagonal shape.

3. A method according to claim 2 wherein all of the sidewalls of the seed crystal have a length within +/−10% of one another.

4. A method according to claim 3 , wherein x2=1.

5. A method according to claim 1 wherein each of the sidewalls is obtained by cleavage along m-planes.

6. A method according to claim 5 , wherein x2=1.

7. A method according to claim 1 wherein the removal of mechanical damage is carried out by chemical etching in liquid containing phosphoric acid.

8. A method according to claim 1 wherein the bulk crystal is grown on nitrogen polar surfaces of two seed crystals having c-plane orientation with miscut angle less than 5 degree, having same shape and size with +/−10% error in length, with both Ga-polar faces of the two seed crystals attached to each other.

9. A method according to claim 8 , wherein x2=1.

10. A method according to claim 1 wherein the bulk crystal is GaN.

11. A method according to claim 10 , wherein x2=1.

Assignees

• Sixpoint Mat Inc
• Seoul Semiconductor Co Ltd

Inventors

• Hashimoto Tadao
• Letts Edward

Classifications

• C30B23/025 Primary

  characterised by the substrate · CPC title

• H01L29/32

  Electricity · mapped topic

• C30B29/403

  AIII-nitrides · CPC title

• C30B7/105 Primary

  using ammonia as solvent, i.e. ammonothermal processes · CPC title

• C30B29/64

  Flat crystals, e.g. plates, strips or discs · CPC title