Method of bonding a substrate to a semiconductor light emitting device

Patent metadata

Field	Value
Publication number	US-10158049-B2
Application number	US-201214131686-A
Country	US
Kind code	B2
Filing date	Jul 30, 2012
Priority date	Aug 30, 2011
Publication date	Dec 18, 2018
Grant date	Dec 18, 2018

Abstract

A method according to embodiments of the invention includes positioning a flexible film ( 48 ) over a wafer of semiconductor light emitting devices, each semiconductor light emitting device including a semiconductor structure ( 13 ) including a light emitting layer sandwiched between an n-type region and a p-type region. The wafer of semiconductor light emitting devices is bonded to a substrate ( 50 ) via the flexible film ( 48 ). After bonding, the flexible film ( 48 ) is in direct contact with the semiconductor structures ( 13 ). The method further includes dividing the wafer after bonding the wafer to the substrate ( 50 ).

First claim

What is being claimed is:

1. A method comprising:
positioning a pre-formed flexible bonding film over a plurality of light-emitting semiconductor structures to form a first intermediate structure, the bonding film including a first wavelength converting material;
bonding the bonding film to the light-emitting semiconductor structures by applying a first temperature and a first pressure to the first intermediate structure;
positioning a substrate over the bonding film to form a second intermediate structure, the substrate being positioned over the bonding film after the bonding film is bonded to the light-emitting semiconductor structures; and
bonding the substrate to the bonding film by applying a second temperature and a second pressure to the second intermediate structure, the second temperature being higher than the first temperature, the second pressure being higher than the first pressure, and the first temperature and the first pressure being balanced to permit the binding film to maintain an adhesive strength that is sufficient for bonding the substrate to the bonding film while achieving a hardness that is sufficient to prevent the bonding film from melting during the bonding of the substrate to the bonding film; and
dividing the second intermediate structure to produce a plurality of light-emitting devices.

2. The method of claim 1 , wherein:
each of the plurality of light-emitting semiconductor structures include a light-emitting layer sandwiched between an n-type region and a p-type region; and
each of the plurality of light-emitting devices includes a different light-emitting semiconductor structure, a portion of the bonding film, and a portion of the substrate.

3. The method of claim 1 , wherein the first wavelength converting material is phosphor.

4. The method of claim 1 , wherein the bonding film is transparent.

5. The method of claim 1 , wherein:
the bonding of the bonding film to the light-emitting semiconductor structures is performed by using a first vacuum laminator, and
the bonding of the substrate to the bonding film is performed by using a second vacuum laminator.

6. The method of claim 1 wherein the substrate is glass.

7. The method of claim 1 , wherein the plurality of semiconductor structures is formed over a growth substrate, the method further comprising texturing a surface of the plurality of semiconductor structures exposed by removing the growth substrate.

8. The method of claim 7 , wherein the bonding film is positioned over the textured surface.

9. The method of claim 1 , wherein prior to being positioned over the plurality of semiconductor structures, the bonding film is sandwiched between a support film and a protective film, the method further comprising removing one of the support film and the protective film prior to attaching the bonding film to the plurality of semiconductor structures.

10. The method of claim 9 , further comprising removing the other of the support film and the protective film prior to positioning the substrate over the bonding film.

11. The method of claim 1 , wherein the bonding of the bonding film to the plurality of light-emitting semiconductor structures includes vacuum laminating the bonding film to the plurality of semi-conductor structures.

12. The method of claim 1 , wherein bonding the substrate to the bonding film includes vacuum laminating the substrate to the bonding film.

13. The method of claim 1 , wherein the substrates comprises a second wavelength converting material.

Assignees

• Basin Grigoriy
• Epler John Edward
• Martin Paul Scott
• Lumileds Llc

Inventors

• Basin Grigoriy
• Epler John Edward
• Martin Paul Scott

Classifications

• H10W72/0198

  batch processes · CPC title

• H10W72/952

  comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title

• H10W72/923

  Bond pads having multiple stacked layers · CPC title

• H10W72/01938

  in gaseous form, e.g. by CVD or PVD · CPC title

• H10W72/01935

  by plating, e.g. electroless plating or electroplating · CPC title