Semiconductor light-emitting device

Patent metadata

Field	Value
Publication number	US-10153397-B2
Application number	US-201715689220-A
Country	US
Kind code	B2
Filing date	Aug 29, 2017
Priority date	Jan 5, 2017
Publication date	Dec 11, 2018
Grant date	Dec 11, 2018

Abstract

A semiconductor light-emitting device includes a first conductive semiconductor layer on a substrate, a superlattice layer including a plurality of first quantum barrier layers and a plurality of first quantum well layers, the plurality of first quantum barrier layers and the plurality of first quantum well layers being alternately stacked on the first conductive semiconductor layer, an active layer on the superlattice layer, and a second conductive semiconductor layer on the active layer, wherein a Si doping concentration of at least one of the plurality of first quantum well layers is equal to or greater than 1.0×1016/cm3 and less than or equal to 1.0×1018/cm3. Thus, the semiconductor light-emitting device may have increased light output and reliability.

First claim

What is claimed is:

1. A semiconductor light-emitting device comprising: a first conductive semiconductor layer; a superlattice layer including a plurality of first quantum barrier layers and a plurality of first quantum well layers, the plurality of first quantum barrier layers and the plurality of first quantum well layers being stacked on the first conductive semiconductor layer; an active layer on the superlattice layer; and a second conductive semiconductor layer on the active layer and in direct contact with the active layer, a Si doping concentration of at least one of the plurality of first quantum well layers being equal to or greater than 1.0×10 16 /cm 3 and less than or equal to 1.0×10 18 /cm 3 .

2. The device of claim 1 , wherein the Si doping concentration of the at least one of the plurality of first quantum well layers is equal to or greater than 4.0×10 17 /cm 3 .

3. The device of claim 1 , wherein the Si doping concentration of the at least one of the plurality of first quantum well layers is less than or equal to 9.5×10 17 /cm 3 .

4. The device of claim 1 , wherein a thickness of at least one of the plurality of first quantum well layers is equal to or greater than 0.5 nm and less than or equal to 2 nm.

5. The device of claim 1 , wherein a thickness of at least one of the plurality of first quantum barrier layers is equal to or greater than 0.5 nm and less than or equal to 10 nm.

6. The device of claim 1 , wherein the active layer comprises a multiple quantum well structure.

7. The device of claim 1 , wherein:
the active layer includes a plurality of second quantum well layers and a plurality of second quantum barrier layers,
the plurality of second quantum well layers and the plurality of second quantum barrier layers are stacked on one other,
at least one of the plurality of second quantum well layers includes InGaN, and
at least one of the plurality of second quantum barrier layers includes GaN.

8. The device of claim 7 , wherein a thickness of at least one of the plurality of second quantum well layers and a thickness of at least one of the plurality of second quantum barrier layers is equal to or greater than 3 nm and less than or equal to 10 nm.

9. The device of claim 1 , further comprising:
a substrate under the first conductive semiconductor layer, the substrate having hexagonal-rhombo symmetry, and a top surface of the substrate being a C(0001) plane.

10. The device of claim 9 , further comprising:
a buffer layer between the superlattice layer and the substrate.

11. The device of claim 1 , wherein the plurality of first quantum barrier layers and the plurality of first quantum well layers are alternately stacked on the first conductive semiconductor layer.

12. A semiconductor light-emitting device comprising:
a first conductive semiconductor layer;
a superlattice layer including a plurality of first quantum barrier layers and a plurality of first quantum well layers, the plurality of first quantum barrier layers and the plurality of first quantum well layers being stacked on the first conductive semiconductor layer;
an active layer on the superlattice layer; and
a second conductive semiconductor layer on the active layer,
at least one of the plurality of first quantum well layers being doped with Si, and
an amplitude of a current flowing through the semiconductor light-emitting device when an inverse voltage equal to greater than 4.5 V and less than or equal to 5.5 V is applied to the semiconductor light-emitting device being less than or equal to 0.01 μA.

13. The device of claim 12 , wherein a Si doping concentration of the at least one of the plurality of first quantum well layers is equal to or greater than 1.0×10 16 /cm 3 and less than or equal to 1.0×10 18 /cm 3 .

14. The device of claim 13 , wherein the Si doping concentration of the at least one of the plurality of first quantum well layers is equal to or greater than 4.0×10 17 /cm 3 .

15. The device of claim 13 , wherein the Si doping concentration of the at least one of the plurality of first quantum well layers is less than or equal to 9.5×10 17 /cm 3 .

16. The device of claim 12 , wherein a thickness of the plurality of first quantum well layers is equal to or greater than 0.5 nm and less than or equal to 2 nm.

17. The device of claim 12 , wherein the plurality of first quantum barrier layers and the plurality of first quantum well layers are alternately stacked on the first conductive semiconductor layer.

18. A semiconductor light-emitting device comprising:
a first conductive semiconductor layer; and
a superlattice layer on the first conductive semiconductor layer, the superlattice layer including a plurality of first quantum barrier layers and a plurality of first quantum well layers, at least one of the plurality of first quantum barrier layers being in contact with at least one of the plurality of first quantum well layers;
the at least one of the plurality of first quantum well layers being doped with Si such that a lattice constant difference between the at least one of the plurality of first quantum barrier layers and the at least one of the plurality of first quantum well layers is less than the lattice constant difference when the at least one of the plurality of first quantum well layers is not doped with Si;
a doping concentration of the Si in the at least one of the plurality of first quantum well layers being equal to or greater than 1.0×10 16 /cm 3 and less than or equal to 1.0×10 18 /cm 3 .

19. The semiconductor light-emitting device of claim 18 , wherein the plurality of first quantum barrier layers and the plurality of first quantum well layers are alternately stacked on the first conductive semiconductor layer.

20. The semiconductor light-emitting device of claim 18 , further comprising:
an active layer on the superlattice layer; and
a second conductive semiconductor layer on the active layer.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Choi Yong-Seok
• Kim Min-Ho
• Lee Jeong-Wook
• Jean Jai-Won
• Kim Chul-Min
• Jeong Jae-Deok
• Kim Min-Hwan
• Kim Jang-Mi

Classifications

• H01L27/15

  Electricity · mapped topic

• H01L33/14 Primary

  Electricity · mapped topic

• H01L33/025

  Electricity · mapped topic

• H01L33/305

  Electricity · mapped topic

• H01L33/06

  Electricity · mapped topic