Nitride semiconductor light emitting device and fabrication method thereof

Patent metadata

Field	Value
Publication number	US-8969849-B2
Application number	US-201414201883-A
Country	US
Kind code	B2
Filing date	Mar 9, 2014
Priority date	Dec 23, 2004
Publication date	Mar 3, 2015
Grant date	Mar 3, 2015

Abstract

Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a delta doped second nitride semiconductor layer formed above the active layer. According to the present invention, the optical power of the nitride semiconductor light emitting device is enhanced, optical power down phenomenon is improved and reliability against ESD (electro static discharge) is enhanced.

First claim

What is claimed is:

1. A light emitting device comprising:
a first conductive type semiconductor layer;
an active layer on the first conductive type semiconductor layer; and
a second conductive type semiconductor layer on the active layer,
wherein the second conductive type semiconductor layer includes a p-type dopant,
wherein the second conductive type semiconductor layer has a doping profile comprising a plurality of peaks,
wherein the second conductive type semiconduc…

Assignees

• Lg Innotek Co Ltd

Inventors

• Lee Suk Hun

Classifications

• H10H29/10

  Electricity · mapped topic

• H10H20/8215

  Electricity · mapped topic

• H10H20/8242

  Electricity · mapped topic

• H10H20/825

  Electricity · mapped topic

• H10H20/812

  Electricity · mapped topic