Power mosfet and manufacturing method thereof
US-2024322032-A1 · Sep 26, 2024 · US
Diode, semiconductor device, and MOSFET
US10147812B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10147812-B2 |
| Application number | US-201615342858-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 3, 2016 |
| Priority date | Jul 27, 2011 |
| Publication date | Dec 4, 2018 |
| Grant date | Dec 4, 2018 |
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- Title
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Abstract
Official abstract text for this publication.
Disclosed is a technique capable of reducing loss at the time of switching in a diode. A diode disclosed in the present specification includes a cathode electrode, a cathode region made of a first conductivity type semiconductor, a drift region made of a low concentration first conductivity type semiconductor, an anode region made of a second conductivity type semiconductor, an anode electrode made of metal, a barrier region formed between the drift region and the anode region and made of a first conductivity type semiconductor having a concentration higher than that of the drift region, and a pillar region formed so as to connect the barrier region to the anode electrode and made of a first conductivity type semiconductor having a concentration higher than that of the barrier region. The pillar region and the anode are connected through a Schottky junction.
First claim
Opening claim text (preview).
The invention claimed is: 1. A MOSFET comprising: a drain electrode; a drain region made of a first conductivity type semiconductor; a drift region made of a low concentration first conductivity type semiconductor; a body region made of a second conductivity type semiconductor; a source region made of the first conductivity type semiconductor; a source electrode made of metal; a gate electrode opposite to the body region between the source region and the drift region via an insulating film; a barrier region formed between the drift region and the body region and made of a first conductivity type semiconductor having a concentration higher than that of the drift region; and a pillar region formed so as to connect the barrier region to the source electrode and made of a first conductivity type semiconductor having a concentration higher than that of the barrier region, wherein the pillar region and the source electrode are connected through a Schottky junction. 2. The MOSFET according to claim 1 , further comprising an electric field progress preventing region formed between the barrier region and the drift region and made of the second conductivity type semiconductor.
Assignees
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US10147812B2 cover?
- Disclosed is a technique capable of reducing loss at the time of switching in a diode. A diode disclosed in the present specification includes a cathode electrode, a cathode region made of a first conductivity type semiconductor, a drift region made of a low concentration first conductivity type semiconductor, an anode region made of a second conductivity type semiconductor, an anode electrode …
- Who is the assignee on this patent?
- Toyota Motor Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H01L29/7813. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Dec 04 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).