Cu ball
US-9668358-B2 · May 30, 2017 · US
US10147695B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10147695-B2 |
| Application number | US-201314899378-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 19, 2013 |
| Priority date | Jun 19, 2013 |
| Publication date | Dec 4, 2018 |
| Grant date | Dec 4, 2018 |
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Official abstract text for this publication.
A Cu core ball is provided that prevents any soft errors and decreases any connection failure. The Cu core ball includes a solder plating film formed on the surface of a Cu ball that is a Sn solder plating film or is made of a lead-free solder alloy, a principal ingredient of which is Sn. The solder plating film contains U of 5 ppb or less and Th of 5 ppb or less. The Cu ball has a purity of not less than 99.9% Cu and not more than 99.995% Cu. Pb and/or Bi contents therein are at a total of 1 ppm or more. The sphericity thereof is 0.95 or more. The obtained Cu core ball has an α dose of 0.0200 cph/cm 2 or less.
Opening claim text (preview).
The invention claimed is: 1. A Cu core ball containing a Cu ball and a solder plating film that coats a surface of the Cu ball, wherein the solder plating film comprises a Sn solder plating film or a solder plating film which is made of lead-free solder alloy, a principal ingredient of the lead-free solder alloy being Sn; the solder plating film contains U content of 5 ppb or less and Th content of 5 ppb or less; the Cu ball includes purity of not less than 99.9% Cu and not more than 99.995% Cu; Pb and/or Bi at a total of 1 ppm or more; and a dose of the Cu core ball is 0.0200 cph/cm 2 or less, wherein the sphericity of the Cu core ball is 0.95 or more, and wherein the solder plating film has a thickness of 20-100 μm. 2. The Cu core ball according to claim 1 wherein the α dose of the Cu core ball is 0.0020 cph/cm 2 or less. 3. The Cu core ball according to claim 1 wherein the α dose of the Cu core ball is 0.0010 cph/cm 2 or less. 4. The Cu core ball according to claim 1 wherein the Cu core ball comprises both Pb and Bi at a total of 1 ppm or more. 5. The Cu core ball according to claim 1 having a diameter of 1 μm through 1000 μm. 6. The Cu core ball according to claim 1 wherein the Cu ball is coated by a plating layer which is made of one element or more previously selected from a group consisting of Ni and Co before the Cu ball is coated by the solder plating film. 7. A solder joint that is formed using the Cu core ball according to claim 1 . 8. The Cu core ball according to claim 1 wherein the Cu ball comprises Pb at a total of 1 ppm or more.
between a chip and a stacked insulating package substrate, interposer or RDL · CPC title
between stacked chips · CPC title
of outermost layers of multilayered bumps, e.g. material of a coating · CPC title
Bumps having a filler embedded in a matrix · CPC title
comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu · CPC title
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