Thin film transistor and manufacturing method thereof, array substrate, and display apparatus

Patent metadata

Field	Value
Publication number	US-10141530-B2
Application number	US-201515110091-A
Country	US
Kind code	B2
Filing date	Nov 5, 2015
Priority date	Jun 16, 2015
Publication date	Nov 27, 2018
Grant date	Nov 27, 2018

Abstract

This invention provides a thin film transistor and a manufacturing method thereof, an array substrate, and a display apparatus. This thin film transistor comprises an organic semiconductor layer and a source drain electrode layer, and further comprises a metal oxide insulating layer, wherein the metal oxide insulating layer is provided between the organic semiconductor layer and the source drain electrode layer and has a work function higher than that of the source drain electrode layer. In the thin film transistor provided by this invention, the metal oxide insulating layer having a higher work function can generate an interface dipole barrier so as to reduce the difficulty for the carriers in the source drain electrode to enter the organic semiconductor layer and thereby it is possible to decrease the contact resistance between the source drain electrode layer and the semiconductor layer and improve electrical properties of the thin film transistor.

First claim

What is claimed is:

1. A thin film transistor, comprising an organic semiconductor layer and a source drain electrode layer, and further comprising a metal oxide insulating layer, wherein the metal oxide insulating layer is provided between the organic semiconductor layer and the source drain electrode layer, and the metal oxide insulating layer has a work function higher than that of the source drain electrode layer, wherein the source drain electrode layer is made of copper, aluminum, zinc, or silver, and the metal oxide insulating layer is a molybdenum oxide layer, a nickel oxide layer, a tungsten oxide layer, or a vanadium pentoxide layer, and the metal oxide insulating layer excludes organic material;
wherein the thin film transistor further comprises a transition metal layer provided between the source drain electrode layer and the metal oxide insulating layer, and the transition metal layer has a work function higher than that of the source drain electrode layer.

2. The thin film transistor according to claim 1 , wherein the metal oxide insulating layer has a thickness between 0.1 nm-10 nm.

3. The thin film transistor according to claim 1 , wherein the organic semiconductor layer is made of pentacene, 6,13-bis(triisopropylsilylethynyl)pentacene, a fullerene derivative, poly(3-hexylthiophene), a polythiophene derivative, or a small-molecule thiophene derivative.

4. The thin film transistor according to claim 1 , wherein the transition metal layer is made of gold or platinum.

5. The thin film transistor according to claim 1 , wherein a ratio of the thickness of the transition metal layer to the thickness of the source drain electrode layer is 1/2-1/10.

6. The thin film transistor according to claim 5 , wherein a ratio of the thickness of the transition metal layer to the thickness of the source drain electrode layer is 1/4.

7. The thin film transistor according to claim 1 , wherein the thin film transistor is a top gate type thin film transistor.

8. An array substrate, comprising a thin film transistor according to claim 1 .

9. A display apparatus, comprising an array substrate according to claim 8 .

10. A manufacturing method of a thin film transistor according to claim 1 , comprising a step of forming an organic semiconductor layer and a source drain electrode layer, and further comprising a step of forming a metal oxide insulating layer between the organic semiconductor layer and the source drain electrode layer, wherein the metal oxide insulating layer has a work function higher than that of the source drain electrode layer;
wherein the method further comprises a step of forming a transition metal layer between the source drain electrode layer and the metal oxide insulating layer, wherein the transition metal layer has a work function higher than that of the source drain electrode layer.

11. The method according to claim 10 , wherein said step of forming a transition metal layer between the source drain electrode layer and the metal oxide insulating layer comprises:
forming a metal oxide insulating layer using a vacuum thermal evaporation deposition process;
forming a transition metal material layer on the metal oxide insulating layer; and
subjecting the metal oxide insulating layer and the transition metal material layer to a patterning process to simultaneously form a source electrode and a drain electrode as well as a transition metal layer on the source electrode and the drain electrode.

12. The method according to claim 10 , wherein the metal oxide insulating layer has a thickness between 0.1 nm-10 nm.

13. The method according to claim 10 , wherein the organic semiconductor layer made of is pentacene, 6,13-bis(triisopropylsilylethynyl)pentacene, a fullerene derivative, poly(3-hexylthiophene), a polythiophene derivative, or a small-molecule thiophene derivative.

14. The method according to claim 10 , wherein the transition metal layer is made of gold or platinum.

15. The method according to claim 10 , wherein a ratio of the thickness of the transition metal layer to the thickness of the source drain electrode layer is 1/2-1/10.

16. The method according to claim 10 , wherein a ratio of the thickness of the transition metal layer to the thickness of the source drain electrode layer is 1/4.

Assignees

• Boe Technology Group Co Ltd
• Univ Shanghai Jiaotong

Inventors

• Huang Wei
• Zhao Jiaqing
• Tang Wei
• Feng Linrun
• Guo Xiaojun

Classifications

• H01L51/0558

  Electricity · mapped topic

• H01L2251/303

  Electricity · mapped topic

• H01L51/0055

  Electricity · mapped topic

• H01L51/107 Primary

  Electricity · mapped topic

• H01L51/105

  Electricity · mapped topic