Organic semiconductor thin film transistor and method of fabricating the same

Patent metadata

Field	Value
Publication number	US-9178169-B2
Application number	US-201414218126-A
Country	US
Kind code	B2
Filing date	Mar 18, 2014
Priority date	Nov 29, 2005
Publication date	Nov 3, 2015
Grant date	Nov 3, 2015

Abstract

A substrate having a thin film transistor includes a buffer layer on a substrate, source and drain electrodes on the buffer layer, a portion of the buffer layer exposed between the source and drain electrodes, a small organic semiconductor layer on the source electrode and the drain electrode, the organic semiconductor layer contacting the exposed portion of the buffer layer, a gate insulating layer on the organic semiconductor layer, the gate insulating layer having substantially the same size as the organic semiconductor layer, a gate electrode on the gate insulating layer, a passivation layer over the surface of the substrate including the gate electrode; and a pixel electrode on the passivation layer, the pixel electrode electrically connected to the drain electrode.

First claim

What is claimed is:

1. A thin film transistor, comprising:
source and drain electrodes on a substrate;
a small molecule organic semiconductor layer on the source and drain electrodes;
a gate insulating layer on the small molecule organic semiconductor layer and covering a top surface and lateral surfaces of the small molecule organic semiconductor layer; and
a gate electrode on the gate insulating layer,
wherein a portion of the drain electrode is exposed by the small mole…

Assignees

• Lg Display Co Ltd

Inventors

• Han Chang-Wook

Classifications

• H01L51/107

  Electricity · mapped topic

• G02F1/1368

  Physics · mapped topic

• H01L51/055

  Electricity · mapped topic

• H01L51/0541 Primary

  Electricity · mapped topic

• G02F1/136 Primary

  Physics · mapped topic