Semiconductor apparatus, stacked semiconductor apparatus and encapsulated stacked-semiconductor apparatus each having photo-curable resin layer

Patent metadata

Field	Value
Publication number	US-10141272-B2
Application number	US-201515126116-A
Country	US
Kind code	B2
Filing date	Mar 16, 2015
Priority date	Mar 31, 2014
Publication date	Nov 27, 2018
Grant date	Nov 27, 2018

Abstract

A semiconductor apparatus including a semiconductor device, an on-semiconductor-device metal pad and a metal interconnect each electrically connected to the semiconductor device, a through electrode and a solder bump each electrically connected to the metal interconnect, a first insulating layer on which the semiconductor device is placed, a second insulating layer formed on the semiconductor device, a third insulating layer formed on the second insulating layer, wherein the metal interconnect is electrically connected to the semiconductor device via the on-semiconductor-device metal pad at an upper surface of the second insulating layer, and the metal interconnect penetrates the second insulating layer from its upper surface and is electrically connected to the through electrode at an lower surface of the second insulating layer. This semiconductor apparatus can be easily placed on a circuit board and stacked, and can reduce its warpage even with dense metal interconnects.

First claim

The invention claimed is:

1. A semiconductor apparatus comprising: a semiconductor device; an on-semiconductor-device metal pad electrically connected to the semiconductor device; a metal interconnect electrically connected to the semiconductor device; a through electrode electrically connected to the metal interconnect; a solder bump electrically connected to the metal interconnect; a first insulating layer on which the semiconductor device is placed; a second insulating layer formed on the semiconductor device; a third insulating layer formed on the second insulating layer, wherein
the through electrode penetrates at least the second insulating layer,
the metal interconnect is electrically connected to the semiconductor device via the on-semiconductor-device metal pad at an upper surface of the second insulating layer, and the metal interconnect penetrates the second insulating layer from the upper surface of the second insulating layer and is electrically connected to the through electrode at an lower surface of the second insulating layer,
the first insulating layer is formed by a photo-curable dry film or a photo-curable resist coating film,
the second insulating layer is formed by the photo-curable dry film, and
the third insulating layer is formed by the photo-curable dry film or a photo-curable resist coating film; wherein
the photo-curable dry film has a photo-curable resin layer composed of a photo-curable resin composition containing: resin, crosslinking agents, a photo acid generator and a solvent, or
the photo-curable resist coating film is a photo-curable resin layer composed of a photo-curable resin composition containing: resin, crosslinking agents, a photo acid generator and a solvent.

2. The semiconductor apparatus according to claim 1 , wherein the semiconductor device has a height of 20 to 100 μm, the first insulating layer has a thickness of 1 to 20 μm, the second insulating layer has a thickness of 5 to 100 μm, the third insulating layer has a thickness of 5 to 100 μm, and the semiconductor apparatus has a thickness of 50 to 300 μm.

3. The semiconductor apparatus according to claim 2 , wherein the photo-curable dry film has a photo-curable resin layer composed of a chemically amplified negative resist composition containing:
(A) a silicone skeleton-containing polymer compound having a repeating unit shown by the following general formula (1) and having a weight average molecular weight of 3,000 to 500,000

wherein R 1 to R 4 may be the same or different and represent a monovalent hydrocarbon group having 1 to 8 carbon atoms; “m” is an integer of 1 to 100; “a”, “b”, “c”, and “d” are each 0 or a positive number, and “a”, “b”, “c”, and “d” are not simultaneously 0, provided that a+b+c+d=1; X represents an organic group shown by the following general formula (2); and Y represents an organic group shown by the following general formula (3);

wherein Z represents a divalent organic group selected from any of

“n” is 0 or 1; R 5 and R 6 each represent an alkyl group or alkoxy group having 1 to 4 carbon atoms and may be the same or different from each other; and “k” is 0, 1, or 2;

wherein V represents a divalent organic group selected from any of

“p” is 0 or 1; R 7 and R 8 each represent an alkyl group or alkoxy group having 1 to 4 carbon atoms and may be the same or different from each other; and “h” is 0, 1, or 2;
(B) one or more crosslinking agents selected from an amino condensate modified with formaldehyde or formaldehyde-alcohol and a phenol compound having on average two or more methylol groups or alkoxymethylol groups per molecule;
(C) a photo acid generator capable of generating an acid by decomposition with light having a wavelength of 190 to 500 nm; and
(D) a solvent.

4. The semiconductor apparatus according to claim 1 , wherein the photo-curable dry film has a photo-curable resin layer composed of a chemically amplified negative resist composition containing:
(A) a silicone skeleton-containing polymer compound having a repeating unit shown by the following general formula (1) and having a weight average molecular weight of 3,000 to 500,000

wherein R 1 to R 4 may be the same or different and represent a monovalent hydrocarbon group having 1 to 8 carbon atoms; “m” is an integer of 1 to 100; “a”, “b”, “c”, and “d” are each 0 or a positive number, and “a”, “b”, “c”, and “d” are not simultaneously 0, provided that a+b+c+d=1; X represents an organic group shown by the following general formula (2); and Y represents an organic group shown by the following general formula (3);

wherein Z represents a divalent organic group selected from any of

“n” is 0 or 1; R 5 and R 6 each represent an alkyl group or alkoxy group having 1 to 4 carbon atoms and may be the same or different from each other; and “k” is 0, 1, or 2;

wherein V represents a divalent organic group selected from any of

“p” is 0 or 1; R 7 and R 8 each represent an alkyl group or alkoxy group having 1 to 4 carbon atoms and may be the same or different from each other; and “h” is 0, 1, or 2;
(B) one or more crosslinking agents selected from an amino condensate modified with formaldehyde or formaldehyde-alcohol and a phenol compound having on average two or more methylol groups or alkoxymethylol groups per molecule;
(C) a photo acid generator capable of generating an acid by decomposition with light having a wavelength of 190 to 500 nm; and
(D) a solvent.

5. The semiconductor apparatus according to claim 1 , wherein the photo-curable resin composition is a chemically amplified negative resist composition.

6. A stacked semiconductor apparatus, comprising a plurality of semiconductor apparatuses stacked by flip chip, wherein each semiconductor apparatus of the plurality of semiconductor apparatuses comprises:
a semiconductor device; an on-semiconductor-device metal pad electrically connected to the semiconductor device; a metal interconnect electrically connected to the semiconductor device; a through electrode electrically connected to the metal interconnect; a solder bump electrically connected to the metal interconnect; a first insulating layer on which the semiconductor device is placed; a second insulating layer formed on the semiconductor device; a third insulating layer formed on the second insulating layer, wherein
the through electrode penetrates at least the second insulating layer,
the metal interconnect is electrically connected to the semiconductor device via the on-semiconductor-device metal pad at an upper surface of the second insulating layer, and the metal interconnect penetrates the second insulating layer from the upper surface of the second insulating layer and is electrically connected to the t

Assignees

• Shinetsu Chemical Co

Inventors

• Takemura Katsuya
• Soga Kyoko
• Asai Satoshi
• Kondo Kazunori
• Sugo Michihiro
• Kato Hideto

Classifications

• H10W70/60

  Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40) · CPC title

• H10W72/0198

  batch processes · CPC title

• H10W72/072

  of bump connectors · CPC title

• H10W70/099

  Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers · CPC title

• H10W74/15

  on active surfaces of flip-chip devices, e.g. underfills · CPC title