Plating method, plating apparatus, and storage medium

Patent metadata

Field	Value
Publication number	US-10138556-B2
Application number	US-201314404205-A
Country	US
Kind code	B2
Filing date	May 27, 2013
Priority date	May 30, 2012
Publication date	Nov 27, 2018
Grant date	Nov 27, 2018

Abstract

A plating method can improve uniformity in a thickness of a plating layer formed on an inner surface of a recess. The plating method includes a loading process of loading the substrate in which the recess is formed into a casing; and a plating process of supplying a plating liquid to the substrate and forming a plating layer having a specific function on an inner surface of the recess. The plating process includes a first plating process of supplying a first plating liquid to the substrate and forming a first plating layer; and a second plating process of supplying a second plating liquid to the substrate and forming a second plating layer on the first plating layer after the first plating process. Further, a concentration of an additive contained in the first plating liquid is different from a concentration of an additive contained in the second plating liquid.

First claim

We claim:

1. A plating method of performing an electroless plating process to a recess formed in a substrate, the plating method comprising:
a loading process of loading the substrate in which the recess is formed into a casing;
a plating process of supplying a plating liquid to the substrate and forming a combined plating layer which is a barrier film or a seed film, on an inner surface of the recess; and
a burying process of burying a wiring material into the recess on which the combined plating layer has been formed,
wherein the plating process includes a first plating process of supplying a first plating liquid to the substrate and forming a first plating layer; and a second plating process of supplying a second plating liquid to the substrate and forming a second plating layer on the first plating layer, and
a concentration of an additive contained in the first plating liquid is different from a concentration of an additive contained in the second plating liquid,
a thickness of the first plating layer formed on the inner surface of the recess is greater at an upper portion of the recess than at a lower portion of the recess,
a thickness of the second plating layer formed on the inner surface of the recess is greater at the lower portion of the recess than at the upper portion of the recess, and
a thickness of the combined plating layer including the first layer and the second layer is uniform regardless of positions within the recess.

2. The plating method of claim 1 ,
wherein a concentration of the additive contained in any one of the first plating liquid and the second plating liquid is set such that a plating reaction rate on an upper portion of the recess is higher than a plating reaction rate on a lower portion of the recess, and a concentration of the additive contained in the other plating liquid is set such that the plating reaction rate on the lower portion of the recess is higher than the plating reaction rate on the upper portion of the recess.

3. The plating method of claim 1 ,
wherein each of the additive contained in the first plating liquid and the additive contained in the second plating liquid is formed of bis (3-sulfopropyl) disulfide.

4. The plating method of claim 3 ,
wherein a concentration of the bis (3-sulfopropyl) disulfide contained in the first plating liquid is lower than a concentration of the bis (3-sulfopropyl) disulfide contained in the second plating liquid.

5. The plating method of claim 1 , further comprising:
a first pre-treatment process of supplying a first pre-treatment liquid toward the substrate before the first plating process,
wherein the first plating process includes a first substitution process of supplying a first plating liquid to the substrate and substituting the first pre-treatment liquid filled in the recess in the substrate with the first plating liquid; and a first film forming process of supplying a first plating liquid to the substrate and forming the first plating layer after the first substitution process, and
a temperature of the first plating liquid used in the first substitution process is lower than a temperature of the first plating liquid used in the first film forming process.

6. The plating method of claim 1 ,
wherein the second plating process includes a second substitution process of supplying a second plating liquid to the substrate; and a second film forming process of supplying a second plating liquid to the substrate and forming the second plating layer after the second substitution process, and
a temperature of the second plating liquid used in the second substitution process is lower than a temperature of the second plating liquid used in the second film forming process.

7. The plating method of claim 6 , further comprising:
a second pre-treatment process of supplying a second pre-treatment liquid to the substrate after the first plating process and before the second plating process,
wherein, in the second substitution process, the second pre-treatment liquid filled in the recess formed in the substrate is substituted with the second plating liquid.

Assignees

• Tokyo Electron Ltd

Inventors

• Mizutani Nobutaka
• Tanaka Takashi
• Iwashita Mitsuaki

Classifications

• H10W20/0261

  characterised by the filling method or the material of the conductive fill · CPC title

• H10W20/0245

  comprising use of blind vias during the manufacture · CPC title

• H10P14/46 Primary

  using a liquid · CPC title

• H10W20/033

  in openings in dielectrics · CPC title

• H10W20/023

  the interconnections being through-semiconductor vias · CPC title