Catadioptric projection objective comprising deflection mirrors and projection exposure method

Patent metadata

Field	Value
Publication number	US-10120176-B2
Application number	US-201715783482-A
Country	US
Kind code	B2
Filing date	Oct 13, 2017
Priority date	Sep 29, 2009
Publication date	Nov 6, 2018
Grant date	Nov 6, 2018

Abstract

A method for manufacturing an integrated circuit includes scanning a wafer with respect to a catadioptric projection objective and imaging a pattern on a mask onto a wafer while scanning the wafer. The imaging includes illuminating the mask with radiation; imaging, using the radiation, the pattern into a first intermediate image, the first intermediate image to a second intermediate image, and the second intermediate image into an image field arranged in an image surface where the wafer is arranged; and, manipulating one or more of optical elements while scanning the wafer to reduce errors in the image at the image field. A concave mirror arranged in a region of a pupil surface reflects the radiation. The projection objective also includes mirrors to deflect the radiation from the object field towards the concave mirror and to deflect the radiation from the concave mirror towards the image field. The deflection mirrors are mechanically coupled to a displacement device arranged to displace the first and second deflection mirrors.

First claim

The invention claimed is:

1. A lithographic method for manufacturing an integrated circuit, the method comprising:
scanning a wafer with respect to a catadioptric projection objective comprising a plurality of optical elements;
imaging a pattern on a mask onto a wafer while scanning the wafer with respect to the catadioptric projection objective, the imaging comprising;
illuminating the mask arranged in an object surface of a catadioptric projection objective with radiation;
imaging, using the radiation, the pattern into a first intermediate image using a first objective part of a catadioptric projection objective;
imaging, using the radiation, the first intermediate image to a second intermediate image using a second objective part of the catadioptric projection objective, wherein imaging the first intermediate image to the second intermediate image comprises reflecting light from a concave mirror arranged in a region of a pupil surface in the second objective part;
imaging, using the radiation, the second intermediate image into an image field arranged in an image surface using a third objective part of the catadioptric projection objective, the wafer being arranged at the image surface,
wherein the catadioptric projection objective comprises a first deflection mirror configured to deflect the radiation from the object field towards the concave mirror in the second objective part and a second deflection mirror configured to deflect the radiation from the concave mirror towards the image field, the first and second deflection mirrors being mechanically coupled to a displacement device arranged to displace the first and second deflection mirrors along a first direction; and

manipulating one or more of the optical elements while scanning the wafer with respect to the catadioptric projection objective to reduce errors in the image at the image field.

2. The method of claim 1 , wherein the errors in the image at the image field that are reduced comprise a distortion.

3. The method of claim 2 , wherein the distortion is in a direction orthogonal to a scan direction of the wafer with respect to the image field.

4. The method of claim 2 , wherein the distortion is an anamorphic distortion.

5. The method of claim 2 , wherein the distortion is reduced without increasing fading in the image at the image field.

6. The method of claim 2 , wherein the distortion is reduced without inducing a loss of contrast in the image at the image field.

7. The method of claim 1 , wherein manipulating one or more of the optical elements causes a magnification of the projection objective to change.

8. The method of claim 1 , wherein the second objective part has an imaging scale between −0.8 and −1.2.

9. The method of claim 8 , wherein the imaging scale of the second objective part is close to or is −1 in a first image direction.

10. The method of claim 9 , wherein the imaging scale of the second objective part is close to or is +1 in a second image direction orthogonal to the first image direction.

11. The method of claim 1 , further comprising displacing the first and second deflection mirrors between a first position and a different second position, wherein when the first deflection mirror is in its first position, radiation from the illumination system for imaging the object at an object field into an image field impinges on a first reflection region of the first deflection mirror, and when the first deflection mirror is in its second position, the radiation impinges on a second reflection region of the first deflection mirror, and the second reflection region of the first deflection mirror is offset from the first reflection region of the first deflection mirror in a direction parallel the first direction.

12. The method of claim 11 , wherein a distribution of reflectivity of the first reflection region of the first deflection mirror is different from a distribution of reflectivity of the second reflection region of the first deflection mirror.

13. The method of claim 11 , wherein a reflection coating of the first deflection mirror has a thickness that changes linearly in a direction parallel to the first direction.

14. The method of claim 11 , wherein a reflectivity of the first reflection region of the first deflection mirror is constant, and a thickness of a reflection coating of the first deflection mirror is non-constant in the second reflection region of the first deflection mirror.

15. The method of claim 1 , further comprising synchronously displacing first and second deflection mirrors parallel to the first direction.

16. The method of claim 1 , wherein the first and second deflection surfaces are supported by perpendicularly oriented surfaces of a prism.

17. The method of claim 1 , wherein the wafer supports a photoresist sensitive to the radiation.

Assignees

• Zeiss Carl Smt Gmbh

Inventors

• Schicketanz Thomas
• Gruner Toralf

Classifications

• G03F1/26

  Phase shift masks [PSM]; PSM blanks; Preparation thereof · CPC title

• G03F7/70441

  Optical proximity correction [OPC] · CPC title

• G02B13/14

  for use with infrared or ultraviolet radiation ({G02B13/008, } G02B13/16 take precedence) · CPC title

• G02B17/0892 Primary

  specially adapted for the UV · CPC title

• G03F7/70791

  Large workpieces, e.g. glass substrates for flat panel displays or solar panels · CPC title