EPI base ring

Patent metadata

Field	Value
Publication number	US-10119192-B2
Application number	US-201615136119-A
Country	US
Kind code	B2
Filing date	Apr 22, 2016
Priority date	Mar 13, 2013
Publication date	Nov 6, 2018
Grant date	Nov 6, 2018

Abstract

Embodiments described herein relate to a base ring assembly for use in a substrate processing chamber. In one embodiment, the base ring assembly comprises a ring body sized to be received within an inner circumference of the substrate processing chamber, the ring body comprising a loading port for passage of the substrate, a gas inlet, and a gas outlet, wherein the gas inlet and the gas outlet are disposed at opposing ends of the ring body, and an upper ring configured to dispose on a top surface of the ring body, and a lower ring configured to dispose on a bottom surface of the ring body, wherein the upper ring, the lower ring, and the ring body, once assembled, are generally concentric or coaxial.

First claim

The invention claimed is:

1. A base ring assembly for a substrate processing chamber, comprising:
a ring body to be disposed within an inner circumference of the substrate processing chamber, the ring body having:
a substrate loading port;
a gas inlet;
a gas outlet, wherein the gas inlet and the gas outlet are disposed at opposing ends of the ring body;
an upper trench formed in a top surface of the ring body; and
a lower trench formed in a bottom surface of the ring body;

a first ring removably disposed within the upper trench of the ring body, the first ring and the upper trench define a first annular channel therebetween;
a first wall extending upwardly from the top surface of the ring body, wherein the first wall is disposed around an inner circumference of the ring body, and an outer portion of the first wall and an inner portion of the first ring define a first annular trench;
a second ring removably disposed within the lower trench of the ring body, the second ring and the lower trench define a second annular channel therebetween; and
a second wall extending downwardly from the bottom surface of the ring body, wherein the second wall is disposed around an inner circumference of the ring body, and an outer portion of the second wall and an inner portion of the second ring defines a second annular trench,
wherein each of the first annular trench and the second annular trench is to receive an O-ring to be disposed within the first annular trench and the second annular trench, and the first annular channel and the second annular channel are in fluid communication with a fluid source.

2. The base ring assembly of claim 1 , wherein the ring body is formed of aluminum or stainless steel.

3. The base ring assembly of claim 1 , wherein the substrate loading port, the gas inlet, and the gas outlet are intersected by a plane.

4. The base ring assembly of claim 1 , wherein the substrate loading port is angularly offset at about 90° with respect to the gas inlet and the gas outlet within a plane where the substrate loading port, the gas inlet, and the gas outlet are disposed.

5. The base ring assembly of claim 1 , wherein the substrate loading port has a height of about 0.5 inches to about 2 inches.

6. The base ring assembly of claim 1 , wherein the ring body has a height of about 2 inches to about 6 inches.

7. The base ring assembly of claim 1 , wherein the first ring, the second ring, and the ring body are formed as an integrated body.

8. The base ring assembly of claim 1 , wherein the first ring and the second ring have a general “H” shaped cross-section.

9. A process chamber for processing a substrate, comprising:
a substrate support disposed within the process chamber, the substrate support having a substrate support surface;
a lower dome disposed relatively below the substrate support;
an upper dome disposed relatively above the substrate support, the upper dome being opposed to the lower dome; and
a ring body to be disposed within an inner circumference of the process chamber, the ring body comprising:
a substrate loading port;
a gas inlet;
a gas outlet, wherein the gas inlet and the gas outlet are disposed at opposing ends of the ring body;
an upper trench formed in a top surface of the ring body; and
a lower trench formed in a bottom surface of the ring body;
a first ring removably disposed within the upper trench of the ring body, the first ring and the upper trench define a first annular channel therebetween;
a first wall extending upwardly from the top surface of the ring body, the first wall is disposed around an inner circumference of the ring body, and an outer portion of the first wall and an inner portion of the first ring define a first annular trench;
a second ring removably disposed within the lower trench of the ring body, the second ring and the lower trench define a second annular channel therebetween; and
a second wall extending downwardly from the bottom surface of the ring body, the second wall is disposed around an inner circumference of the ring body, and an outer portion of the second wall and an inner portion of the second ring define a second annular trench,
wherein each of the first annular trench and the second annular trench is to receive an O-ring to be disposed within the first annular trench and the second annular trench, and the first annular channel and the second annular channel are in fluid communication with a fluid source.

10. The process chamber of claim 9 , wherein the ring body is formed of aluminum or stainless steel.

11. The process chamber of claim 9 , wherein the first ring, the second ring, and the ring body are formed as an integrated body.

12. The process chamber of claim 9 , wherein the first ring and the second ring have a general “H” shaped cross-section.

13. The process chamber of claim 9 , wherein the upper dome comprises:
a central window portion; and
a peripheral flange engaging the central window portion at a circumference of the central window portion, wherein a tangent line on an inside surface of the central window portion that passes through an intersection of the central window portion and the peripheral flange is at an angle of about 8° to about 16° with respect to a planar upper surface of the peripheral flange.

14. The process chamber of claim 9 , wherein the lower dome comprises:
a central opening;
a peripheral flange; and
a bottom extended radially outward to connect the peripheral flange and the central opening, wherein a tangent line on an outside surface of the bottom that passes through an intersection of the bottom and the peripheral flange of the lower dome is at an angle of about 8° to about 16° with respect to a planar bottom surface of the peripheral flange of the lower dome.

15. A base ring assembly for a substrate processing chamber, comprising:
a ring body to be disposed within an inner circumference of the substrate processing chamber, the ring body having:
a substrate loading port;
a gas inlet;
a gas outlet, wherein the gas inlet and the gas outlet are disposed at opposing ends of the ring body;
an upper trench formed in a top surface of the ring body; and
a lower trench formed in a bottom surface of the ring body;

a first ring removably disposed within the upper trench of the ring body, wherein the first ring has a general “H” shaped cross-section, and the first ring and the upper trench define a first annular channel therebetween;
a first wall extending upwardly from the top surface of the ring body, wherein an outer portion of the first wall and an inner portion of the first ring define a first annular trench;
a second ring removably disposed within the lower trench of the ring body, wherein the second ring has a general “H” shaped cross-section, the second ring and the lower trench define a second annular channel therebetween; and
a second wall extending downwardly from the bottom surface of the ring body, wherein an outer portion of the second wall and an inner portion of the second ring defines a second annular trench.

Assignees

• Applied Materials Inc

Inventors

• Aboagye Steve
• Brillhart Paul
• Kumar Surajit
• Chang Anzhong
• Kuppurao Satheesh
• Samir Mehmet Tugrul
• Carlson David K

Classifications

• H10P72/0436 Primary

  mainly by radiation · CPC title

• C23C16/4411

  Cooling of the reaction chamber walls (C23C16/45572 takes precedence) · CPC title

• C23C16/4584

  the substrate being rotated · CPC title

• C23C16/45502 Primary

  Flow conditions in reaction chamber · CPC title

• C23C16/45504 Primary

  Laminar flow · CPC title