Method of forming a protective coating for a packaged semiconductor device

US10118816B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10118816-B2
Application numberUS-201615388557-A
CountryUS
Kind codeB2
Filing dateDec 22, 2016
Priority dateAug 24, 2015
Publication dateNov 6, 2018
Grant dateNov 6, 2018

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A packaged includes a flip-chip assembly. The flip-chip assembly includes a first semiconductor substrate having at least one integrated semiconductor device, and a second substrate connected to the first substrate. A main surface of the first semiconductor substrate faces and is spaced apart from the second substrate. The packaged semiconductor device further includes a parylene coating covering outer surfaces of the first semiconductor substrate and the second substrate. A first section of the main surface is exposed from the parylene coating.

First claim

Opening claim text (preview).

What is claimed is: 1. A packaged semiconductor device, comprising: a flip-chip assembly, comprising a first semiconductor substrate comprising at least one integrated semiconductor device, and a second substrate connected to the first substrate, wherein a main surface of the first semiconductor substrate faces and is spaced apart from the second substrate; a parylene coating covering outer surfaces of the first semiconductor substrate and the second substrate, wherein a first section of the main surface is exposed from the parylene coating. 2. The packaged semiconductor device of claim 1 , wherein only the first section of the main surface of the first semiconductor substrate is exposed from the parylene coating and every other surface of the first semiconductor substrate outside of the first section of the main surface is covered by the parylene coating. 3. The packaged semiconductor device of claim 2 , wherein the first semiconductor substrate comprises a MEMs sensor device, and wherein a sensing portion of the MEMs sensor device is disposed in the first section of the main surface of the first semiconductor substrate. 4. The packaged semiconductor device of claim 3 , wherein the MEMs sensor device comprises a pressure sensor configured to detect ambient air pressure at the main surface. 5. The packaged semiconductor device of claim 1 , wherein the second semiconductor substrate comprises at least one integrated semiconductor device. 6. The packaged semiconductor device of claim 1 , wherein the second semiconductor substrate is devoid of functional circuitry. 7. The packaged semiconductor device of claim 5 , wherein the second semiconductor substrate is configured as a heat sink. 8. The packaged semiconductor device of claim 1 , wherein the first semiconductor substrate is connected to the second semiconductor substrate by an interconnect structure, wherein the interconnect structure is completely covered by the parylene coating. 9. The packaged semiconductor device of claim 7 , wherein the interconnect structure is a copper solder bump or stud. 10. The packaged semiconductor device of claim 1 , further comprising a molded cavity package comprising an interior cavity and electrically conductive leads, wherein the flip-chip assembly is mounted within the interior cavity, and wherein the electrically conductive leads are connected to electrical terminals of the first semiconductor substrate. 11. The packaged semiconductor device of claim 9 , wherein the electrically conductive leads are connected to electrical terminals of the first semiconductor substrate by one or more though-silicon-vias that extend through the second substrate. 12. The packaged semiconductor device of claim 9 , wherein the electrically conductive leads are connected to electrical terminals of the first semiconductor substrate by one or more electrically conductive bond wires connected between the leads and electrical terminals of the of the second semiconductor substrate. 13. The packaged semiconductor device of claim 9 , wherein the molded cavity package comprises an open side that extends between top ends of opposing outer sidewalls, and wherein the open side is covered by a gas-permeable membrane.

Assignees

Inventors

Classifications

  • on active surfaces of flip-chip devices, e.g. underfills · CPC title

  • of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills · CPC title

  • Pressure sensors · CPC title

  • B81B7/0038Primary

    using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters · CPC title

  • using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters · CPC title

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What does patent US10118816B2 cover?
A packaged includes a flip-chip assembly. The flip-chip assembly includes a first semiconductor substrate having at least one integrated semiconductor device, and a second substrate connected to the first substrate. A main surface of the first semiconductor substrate faces and is spaced apart from the second substrate. The packaged semiconductor device further includes a parylene coating coveri…
Who is the assignee on this patent?
Infineon Technologies Ag
What technology area does this patent fall under?
Primary CPC classification B81B7/0038. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Tue Nov 06 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).