Apparatus and method for strong-field probing of electric fields in solid-state electronic circuits

Patent metadata

Field	Value
Publication number	US-10107846-B2
Application number	US-201715664116-A
Country	US
Kind code	B2
Filing date	Jul 31, 2017
Priority date	Oct 30, 2015
Publication date	Oct 23, 2018
Grant date	Oct 23, 2018

Abstract

A method and apparatus for generating high-order harmonics in a solid-state medium comprising integrated semiconductor devices and electronics. The high-order harmonics interact with and are modified by the internal electric field associated with the operation of the integrated semiconductor devices and electronics. Measurement of the high-order harmonics after modification by the internal electric fields amounts to high resolution (temporal and spatial) dynamic imaging of the internal electric fields associated with the integrated semiconductor devices and electronics.

First claim

What is claimed:

1. A method comprising:
generating one or more high-order harmonics in a semiconductor or dielectric medium;
utilizing the one or more high-order harmonics generated within the semiconductor or dielectric medium to thereby facilitate an interaction of one or more high-order harmonics with one or more internal electric fields of the one or more semiconductor devices;
measuring the one or more high-order harmonics to construct a high resolution dynamic profile of the one or more internal electric fields; and
delaying generating the one or more high-order harmonics frame by frame, to thereby generate a high-resolution dynamic images of the one or more internal electric fields as a function of time.

2. The method of claim 1 , wherein the one or more high-order harmonics are generated by exposing the semiconductor or dielectric medium to a high intensity laser field.

3. The method of claim 1 , wherein the high resolution dynamic profile of the one or more internal electric fields is constructed by measuring one or more even-order harmonics of the one or more high-order harmonics.

4. The method of claim 1 , wherein the one or more internal electric fields range from DC to PHz frequencies.

5. A method comprising:
generating one or more high-order harmonics in a semiconductor or dielectric medium;
utilizing the one or more high-order harmonics generated within the semiconductor or dielectric medium to thereby facilitate an interaction of one or more high-order harmonics with one or more internal electric fields of the one or more semiconductor devices; and
measuring the one or more high-order harmonics to construct a high resolution dynamic profile of the one or more internal electric fields,
wherein the one or more high-order harmonics are generated by exposing the semiconductor or dielectric medium to a high intensity laser field,
wherein the high intensity laser field is polarized parallel to the one or more internal electric fields of the one or more semiconductor devices.

6. The method of claim 5 , wherein the semiconductor or dielectric medium comprises silicon.

7. The method of claim 5 , wherein the semiconductor or dielectric medium comprises zinc oxide.

8. The method of claim 5 , wherein the high resolution dynamic profile of the one or more internal electric fields is measured by delaying a pulsed static signal with respect to the high intensity laser field.

9. A method comprising:
generating one or more high-order harmonics in a semiconductor or dielectric medium;
utilizing the one or more high-order harmonics generated within the semiconductor or dielectric medium to thereby facilitate an interaction of one or more high-order harmonics with one or more internal electric fields of the one or more semiconductor devices; and
measuring the one or more high-order harmonics to construct a high resolution dynamic profile of the one or more internal electric fields,
wherein the one or more high-order harmonics are generated by exposing the semiconductor or dielectric medium to a high intensity laser field,
wherein the high intensity laser field is delivered by one or more mid-infrared laser pulses.

10. A method comprising:
generating one or more high-order harmonics in a semiconductor or dielectric medium;
utilizing the one or more high-order harmonics generated within the semiconductor or dielectric medium to thereby facilitate an interaction of one or more high-order harmonics with one or more internal electric fields of the one or more semiconductor devices; and
measuring the one or more high-order harmonics to construct a high resolution dynamic profile of the one or more internal electric fields,
wherein the one or more high-order harmonics are generated by exposing the semiconductor or dielectric medium to a high intensity laser field,
wherein generating the one or more high-order harmonics is based on an electron-ion re-collision process in the semiconductor or dielectric medium induced by the high intensity laser field.

11. The method of claim 10 , wherein a sampling of the one or more internal electric fields occurs during a period of the electron-ion re-collision process.

12. The method of claim 11 , wherein the period of the electron-ion re-collision process corresponds to a sub-cycle of the high intensity laser field.

13. An apparatus comprising:
a semiconductor substrate, wherein the semiconductor substrate comprises:
a semiconductor-laser interaction region;
a first input configured to focus a driving laser field onto the semiconductor-laser interaction region to thereby generate one or more high-order harmonics in the semiconductor-laser interaction region;
a second input configured to control the one or more high-order harmonics generated within the semiconductor substrate,
wherein the one or more high-order harmonics interact with one or more internal electric fields in the semiconductor substrate; and

an output for outputting the one or more high-order harmonics,
wherein the driving laser field comprises a mid-infrared laser pulse.

14. The apparatus of claim 13 , wherein the one or more internal electric fields in the semiconductor substrate are generated by one or more semiconductor devices on or within the semiconductor substrate.

15. The apparatus of claim 14 , wherein the second input controls the generation of the one or more high-order harmonics by the one or more semiconductor devices on or within the semiconductor substrate.

16. The apparatus of claim 13 , wherein the semiconductor substrate comprises silicon.

17. The apparatus of claim 13 , wherein the semiconductor substrate comprises zinc oxide.

18. The apparatus of claim 13 , wherein the one or more internal electric fields range from DC to PHz frequencies.

19. An apparatus comprising:
a semiconductor substrate, wherein the semiconductor substrate comprises:
a semiconductor-optical interaction region;
a first input configured to focus an optical stimulation onto the semiconductor-optical interaction region to thereby generate one or more high-order harmonics in the semiconductor-optical interaction region;
a second input configured to control the one or more high-order harmonics generated within the semiconductor substrate, wherein the one or more high-order harmonics interact with one or more internal electric fields in the semiconductor substrate;
an output for outputting the one or more high-order harmonics;
a measuring device in communication with the output, the measuring device for measuring the one or more high-order harmonics to construct a high resolution dynamic profile of the one or more internal electric fields; and
a delaying device for delaying generation the one or more high-order harmonics frame by frame, to thereby generate a high-resolution dynamic images of the one or more internal electric fields as a function of time.

Assignees

• Univ Ottawa

Inventors

• Vampa Giulio
• Corkum Paul B

Classifications

• G02F2001/354

  Physics · mapped topic

• G01R29/12 Primary

  Measuring electrostatic fields {or voltage-potential} · CPC title

• G02F2203/10

  plasmon · CPC title

• G02F1/353 Primary

  Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams · CPC title

• G02F2202/104

  poly-Si · CPC title