Fiber Optic Based Temperature Sensor
US-2024385057-A1 · Nov 21, 2024 · US
US9496681B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9496681-B2 |
| Application number | US-201514936756-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 10, 2015 |
| Priority date | Nov 20, 2014 |
| Publication date | Nov 15, 2016 |
| Grant date | Nov 15, 2016 |
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A method and apparatus is disclosed for generating tunable attosecond-scale radiation pulses, with a frequency in range of ultraviolet to soft-X-ray, from a solid-state medium. The invention utilizes an intense laser pulse to drive a high harmonic generation (HHG) process in a solid state medium and a weak secondary field to control the HHG process. The weak secondary field has a frequency equal to the second harmonic of the intense laser pulse. The spatial, temporal and spectral properties of the HHG process and the emitted harmonic beam are tuned by adjusting the relative delay between the two fields and the intensity of the weak secondary field.
Opening claim text (preview).
What is claimed: 1. A method comprising: applying a driving electromagnetic field having a first frequency and a first intensity to a solid-state medium to thereby trigger a high harmonic generation process in the solid-state medium, wherein the high harmonic generation process results in a generation of a harmonic beam from the solid-state medium, wherein the harmonic beam comprises a plurality of high-order harmonics of the first frequency; and applying a control field having a second frequency, a second intensity and a relative phase with respect to the driving electromagnetic field to an interaction region of the electromagnetic field and the solid-state medium to thereby control one or more spectral, temporal and spatial properties of the harmonic beam generated from the solid-state medium. 2. A method of claim 1 , wherein varying the second intensity of the control field modulates a spectrum of the high harmonic generation process in the solid-state medium. 3. A method of claim 1 , wherein varying the relative phase of the control field as a function of a harmonic order, modulates an intensity of a respective high-order harmonic of the first frequency generated from the solid-state medium. 4. A method of claim 1 , wherein, the solid-state medium has a crystalline structure. 5. A method of claim 1 , wherein, the solid-state medium is a semiconductor material. 6. A method of claim 1 , wherein, the solid-state medium is a dielectric material. 7. A method of claim 1 , where the solid-state medium is a polymer material. 8. A method of claim 1 , wherein the solid-state medium is a biological material. 9. A method of claim 8 , wherein the solid-state medium is a thin slice of a biological material. 10. A method of claim 1 wherein the second frequency of the control field is a second-harmonic of the first frequency of the driving electromagnetic field. 11. A method of claim 1 , wherein the driving electromagnetic field comprises a laser field. 12. An apparatus comprising: a semiconductor-based medium comprising a semiconductor-laser interaction region; a first input configured to focus a drive laser field onto the semiconductor-laser interaction region to thereby initiate a high harmonic generation process in the semiconductor-laser interaction region; a second adjustable input for introducing a control field onto the semiconductor-laser interaction region to thereby control the high harmonic generation process, wherein the control field spatially and temporally overlaps the drive laser field; and an output for directing a signal generated from the semiconductor-laser interaction region onto one or more terminals, wherein the signal comprises one or more high harmonics. 13. An apparatus of claim 12 , wherein the terminals are internal or external terminals. 14. The apparatus of claim 12 , wherein the control field is applied through electrodes fashioned internally on the semiconductor generation medium. 15. The apparatus of claim 12 , wherein the control field is applied by an external source. 16. The apparatus of claim 12 , wherein the control field is a laser field. 17. The apparatus of claim 12 , wherein the control field comprises DC field. 18. The apparatus of claim 12 , wherein the control field comprises AC field. 19. The apparatus of claim 12 , wherein the control field comprises a pulsed electrical signal. 20. The apparatus of claim 12 , wherein the drive laser field comprises a laser pulse. 21. The apparatus of claim 12 , wherein the adjustable input comprises adjusting an intensity of the control field. 22. The apparatus of claim 12 , wherein the adjustable input comprises adjusting a delay of the control field relative to the drive laser field. 23. The apparatus of claim 12 , wherein the one or more high energy attosecond pulses are in an ultraviolet to soft x-ray frequency regime.
for applying pulses to the laser · CPC title
Solid materials · CPC title
Electrical excitation {; Circuits therefor (monolithically integrated laser drive components H01S5/0261)} · CPC title
Non-linear optics · CPC title
using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering {(mode locking using a non-linear element H01S3/1112)} · CPC title
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