Chip resistor element

Patent metadata

Field	Value
Publication number	US-10104776-B2
Application number	US-201615341070-A
Country	US
Kind code	B2
Filing date	Nov 2, 2016
Priority date	Jan 8, 2016
Publication date	Oct 16, 2018
Grant date	Oct 16, 2018

Abstract

A chip resistor element includes an insulating substrate, a resistor layer, first and second internal electrodes, a resistor protection layer, first and second electrode protection layers, and first and second external electrodes. The resistor layer is on the insulating substrate, the first and second internal electrodes are on respective sides of the resistor layer, and the resistor protection layer covers the resistor layer and extends onto portions of the internal electrodes. The first electrode protection layers are on the first and second internal electrodes so as to overlap with portions of the resistor protection layer and contain first conductive powder particles and resin, while the second electrode protection layers are disposed on the first electrode protection layers and contain second conductive powder particles and resin. A content of resin in the second electrode protection layer is lower than in the first electrode protection layer.

First claim

What is claimed is:

1. A chip resistor element comprising:
an insulating substrate having first and second surfaces opposing each other;
a resistor layer disposed on the first surface of the insulating substrate;
first and second internal electrodes disposed on respective sides of the resistor layer on the first surface of the insulating substrate and connected to the resistor layer;
a resistor protection layer covering the resistor layer and extending onto portions of the first and second internal electrodes;
first electrode protection layers disposed on the first and second internal electrodes so as to be overlapped with portions of the resistor protection layer and containing first conductive powder particles and a resin;
second electrode protection layers disposed on the first electrode protection layers and containing second conductive powder particles and a resin, wherein a content of the resin in the second electrode protection layer is lower than a content of the resin in the first electrode protection layer; and
first and second external electrodes respectively disposed on the first and second internal electrodes so as to cover the second electrode protection layers, and connected to the resistor protection layer.

2. The chip resistor element of claim 1 , wherein the first electrode protection layers contain the first conductive powder particles in a first weight ratio, and
the second electrode protection layers contain the second conductive powder particles in a second weight ratio greater than the first weight ratio.

3. The chip resistor element of claim 1 , wherein the second conductive powder has an average particle size (d50) larger than an average particle size (d50) of the first conductive powder.

4. The chip resistor element of claim. 1 , wherein the content of the resin in the first electrode protection layer is in a range of 95 to 99 wt % of a total weight of the first electrode protection layer.

5. The chip resistor element of claim 4 , wherein the first conductive powder particles include 1 to 5 wt % of carbon nanotubes.

6. The chip resistor element of claim 5 , wherein the carbon nanotubes have lengths of 5 μm to 20 μm and diameters of 3 nm to 20 nm.

7. The chip resistor element of claim 1 , wherein the content of the resin in the second electrode protection layer is in a range of 3 to 10 wt % of a total weight of the second electrode protection layer.

8. The chip resistor element of claim 7 , wherein the second conductive powder particles include 90 to 97 wt % of CuNi alloy powder particles.

9. The chip resistor element of claim 8 , wherein an average particle size (d50) of the CuNi alloy powder particles is in a range of 2 μm to 30 μm.

10. The chip resistor element of claim 8 , wherein a weight ratio of Ni in the CuNi alloy powder particles is 50 wt % or more.

11. The chip resistor element of claim 8 , wherein the second conductive powder particles further include carbon nanotubes.

12. The chip resistor element of claim 1 , wherein the first and second internal electrodes contain silver (Ag).

13. The chip resistor element of claim 1 , wherein the resin of the first electrode protection layer is the same as the resin of the second electrode protection layer.

14. The chip resistor element of claim 1 , wherein the resistor protection layer contains the same resin as the resin of the first electrode protection layer.

15. The chip resistor element of claim 1 , wherein the resistor protection layer includes a first resistor protection layer disposed on the resistor layer and containing glass and a second resistor protection layer disposed on the first resistor protection layer and containing a resin.

16. The chip resistor element of claim 1 , wherein the first and second internal electrodes extend onto side surfaces of the insulating substrate.

17. The chip resistor element of claim 1 , wherein each of the first and second external electrodes includes a first plating layer containing nickel (Ni) and a second plating layer disposed on the respective first plating layer and containing at least one of Sn and Pb.

18. A chip resistor element comprising:
an insulating substrate;
a resistor layer disposed on an upper surface of the insulating substrate;
first and second upper electrodes disposed on respective sides of the resistor layer on the upper surface of the insulating substrate and connected to the resistor layer;
a resistor protection layer covering the resistor layer and extending onto portions of the first and second upper electrodes;
first and second side electrodes disposed on respective side surfaces of the insulating substrate and respectively connected to the first and second upper electrodes;
first electrode protection layers disposed on the first and second upper electrodes so as to be overlapped on portions of the resistor protection layer and containing first conductive powder particles and a resin;
second electrode protection layers disposed on the first electrode protection layers and containing second conductive powder particles and a resin, wherein a content of the resin in the second electrode protection layer is lower than a content of the resin in the first electrode protection layer; and
first and second external electrodes respectively disposed on the first and second side electrodes and extended to cover the second electrode protection layers.

19. The chip resistor element of claim 18 , wherein the first and second upper electrodes contain silver (Ag).

20. The chip resistor element of claim. 18 , wherein the second conductive powder has an average particle size (d50) larger than an average particle size (d50) of the first conductive powder, and
the first electrode protection layer contains the first conductive powder particles in a first weight ratio, and the second electrode protection layer contains the second conductive powder particles in a second weight ratio greater than the first weight ratio.

21. The chip resistor element of claim 18 , wherein the content of the resin in the first electrode protection layer is in a range of 95 to 99 wt % of a total weight of the first electrode protection layer, and the first conductive powder particles include 1 to 5 wt % of carbon nanotubes, and
the content of the resin in the second electrode protection layer is in a range of 3 to 10 wt % of a total weight of the second electrode protection layer, and the second conductive powder particles include 90 to 97 wt % of CuNi alloy powder particles.

22. The chip resistor element of claim 21 , wherein the second conductive powder particles further include 0.2 to 0.5 wt % of carbon nanotubes.

23. A chip resistor element comprising:
a resistor layer;
an internal electrode contacting the resistor layer;
a resistor protection layer disposed on the resistor layer and contacting the internal electrode;
an electrode protection layer disposed on the internal electrode and contacting the resistor protection layer; and
an external electrode disposed on the electrode protection layer,
wherein the electrode protection layer comprises:
a first electrode protection layer disposed on the internal electrode and contacting the resistor protection layer, and
a second electrode protection layer disposed on the first electrode protection layer and having the external electrode disposed thereon, and

wherein the first and second electrode protection layers each include resin, and a content of resin in the first electrod

Assignees

• Samsung Electro Mech

Inventors

• Yun Jang Seok
• Kim Hyung Min
• Han Jin Man

Classifications

• H01C1/01

  Mounting; Supporting · CPC title

• H01C17/006

  adapted for manufacturing resistor chips · CPC title

• H01C17/02

  adapted for manufacturing resistors with envelope or housing (apparatus or processes for filling or compressing insulating material in heating element tubes H05B3/52) · CPC title

• Y02P70/611

  Cross-Sectional Technologies · mapped topic

• H01C7/18

  comprising a plurality of layers stacked between terminals · CPC title