Semiconductor device and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-9012971-B2
Application number	US-201213714264-A
Country	US
Kind code	B2
Filing date	Dec 13, 2012
Priority date	Nov 9, 2012
Publication date	Apr 21, 2015
Grant date	Apr 21, 2015

Abstract

A semiconductor device includes a channel layer protruding from a substrate and having protrusions extending from a sidewall thereof. Floating gates surrounding the channel layer are provided between the protrusions. Control gates surrounding the floating gates are stacked along the channel layer. Interlayer insulating layers are interposed between the control gates stacked along the channel layer. A level difference exists between a lateral surface of each of the floating gates, and a lateral surface of each of the protrusions.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a channel layer protruding from a substrate and having protrusions extending from a sidewall thereof and concaves provided between the protrusions;
floating gates surrounding the channel layer and disposed in the concaves to be separate from each other;
control gates surrounding the floating gates, respectively; and
interlayer insulating layers surrounding the protrusions and interposed between the control gates,
w…

Assignees

• Sk Hynix Inc
• Univ Tohoku

Inventors

• Seo Moon Sik
• Endoh Tetsuo

Classifications

• H10D30/689

  Electricity · mapped topic

• H10D30/0411 Primary

  Electricity · mapped topic

• H10D30/025

  Electricity · mapped topic

• H01L27/11582

  Electricity · mapped topic

• H01L29/7889

  Electricity · mapped topic