Single-crystal diamond and method of manufacturing the same
US-2024175167-A1 · May 30, 2024 · US
Method for manufacturing diamond substrate
US10100435B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10100435-B2 |
| Application number | US-201715445196-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 28, 2017 |
| Priority date | Feb 29, 2016 |
| Publication date | Oct 16, 2018 |
| Grant date | Oct 16, 2018 |
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Abstract
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The present invention provides a method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of removing a foreign substance adhered on a wall of the patterned diamond prepared in the first step, and a third step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step. There can be provided a method for manufacturing a diamond substrate with few dislocation defects, in which generation of abnormal growth particles are suppressed.
First claim
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The invention claimed is: 1. A method for manufacturing a diamond substrate, comprising: a first step of preparing patterned diamond by growing diamond on a surface of a foundation, the surface being composed of a different material other than diamond, and processing the grown diamond to have a patterned shape, wherein a bottom portion of a pattern gap of the patterned diamond is composed of a different material or at least a part of the bottom portion of the pattern gap is pierced through, a second step of removing a foreign substance other than diamond adhered on a side wall of a pattern of the patterned diamond prepared in the first step, and a third step of growing diamond from the patterned diamond prepared in the first step to form the diamond in the pattern gap of the patterned diamond prepared in the first step. 2. The method for manufacturing a diamond substrate according to claim 1 , wherein the foreign substance adhered on the wall of the patterned diamond is removed by using CF 4 plasma in the second step. 3. The method for manufacturing a diamond substrate according to claim 1 , wherein the patterned diamond is prepared in the first step with a ratio D/W of a depth D to a width W of the pattern gap being 0.1 or more. 4. The method for manufacturing a diamond substrate according to claim 1 , wherein the patterned diamond is prepared in the first step with at least a part of a bottom portion of the pattern gap being prepared below the foundation surface. 5. The method for manufacturing a diamond substrate according to claim 1 , wherein the diamond is grown by using a chemical vapor deposition method in the third step. 6. The method for manufacturing a diamond substrate according to claim 1 , wherein a void is formed in the diamond grown in the third step. 7. The method for manufacturing a diamond substrate according to claim 5 , wherein a void is formed in the diamond grown in the third step.
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- What does patent US10100435B2 cover?
- The present invention provides a method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of removing a foreign substance adhered on a wall of the patterned diamond prepared in the first step, and a third step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a patter…
- Who is the assignee on this patent?
- Shinetsu Chemical Co, Aist, Univ Nat Corp Kanazawa
- What technology area does this patent fall under?
- Primary CPC classification C30B29/04. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Oct 16 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).