CMP slurry composition for metal wiring and polishing method using the same

Patent metadata

Field	Value
Publication number	US-10100225-B2
Application number	US-201615371316-A
Country	US
Kind code	B2
Filing date	Dec 7, 2016
Priority date	Dec 11, 2015
Publication date	Oct 16, 2018
Grant date	Oct 16, 2018

Abstract

A CMP slurry composition for polishing a metal wire and a polishing method, the CMP slurry composition including polishing particles; an oxidant; a complexing agent; a corrosion inhibitor; and deionized water, wherein the corrosion inhibitor includes an inorganic nitrite or ammonium nitrate.

First claim

What is claimed is:

1. A CMP slurry composition for polishing a metal wire, the CMP slurry composition comprising:
polishing particles;
an oxidant;
a complexing agent;
a corrosion inhibitor; and
deionized water,
wherein the corrosion inhibitor includes an inorganic nitrite or ammonium nitrate,
wherein the inorganic nitrite or ammonium nitrate is present in an amount of 0.001 wt % to less than 1 wt %, based on a total weight of the CMP slurry composition, and
wherein the CMP slurry composition has a pH of greater than 6 and less than 8.

2. The CMP slurry composition as claimed in claim 1 , wherein:
the corrosion inhibitor includes the inorganic nitrite, and
the inorganic nitrite includes sodium nitrite, potassium nitrite, ammonium nitrite, or a combination thereof.

3. The CMP slurry composition as claimed in claim 1 , further comprising a surfactant, a polymeric compound, a dispersant, a pH regulator, or a combination thereof.

4. The CMP slurry composition as claimed in claim 1 , wherein the CMP slurry composition includes:
about 0.01 wt % to about 20 wt % of the polishing particles;
about 0.01 wt % to about 10 wt % of the oxidant;
about 0.01 wt % to about 20 wt % of the complexing agent; and
the 0.001 wt % to less than 1 wt % of the corrosion inhibitor, all wt % being based on a total weight of the CMP slurry composition.

5. The CMP slurry composition as claimed in claim 1 , wherein the CMP slurry composition has a static etch rate of about 50 Å/min or less, as measured for a cobalt film.

6. The CMP slurry composition as claimed in claim 1 , wherein the CMP slurry composition has a static etch rate of about 30 Å/min or less, as measured for a copper film.

7. The CMP slurry composition as claimed in claim 1 , wherein the CMP slurry composition has a removal rate non-uniformity of about 20% or less.

8. A polishing method comprising polishing metal wires using the CMP slurry composition as claimed in claim 1 .

9. The polishing method as claimed in claim 8 , wherein:
the corrosion inhibitor includes the inorganic nitrite, and
the inorganic nitrite includes sodium nitrite, potassium nitrite, ammonium nitrite, or a combination thereof.

10. The polishing method as claimed in claim 8 , wherein the CMP slurry composition further includes a surfactant, a polymeric compound, a dispersant, a pH regulator, or a combination thereof.

11. The polishing method as claimed in claim 8 , wherein the CMP slurry composition includes:
about 0.01 wt % to about 20 wt % of the polishing particles;
about 0.01 wt % to about 10 wt % of the oxidant;
about 0.01 wt % to about 20 wt % of the complexing agent;
the 0.001 wt % less than 1 wt % of the corrosion inhibitor, all wt % being based on a total weight of the CMP slurry composition.

12. The polishing method as claimed in claim 8 , wherein the CMP slurry composition has a static etch rate of about 50 Å/min or less, as measured for a cobalt film.

13. The polishing method as claimed in claim 8 , wherein the CMP slurry composition has a static etch rate of about 30 Å/min or less, as measured for a copper film.

14. The polishing method as claimed in claim 8 , wherein the CMP slurry composition has a removal rate non-uniformity of about 20% or less.

15. The CMP slurry composition as claimed in claim 1 , wherein:
the polishing particles include silica,
the oxidant includes hydrogen peroxide,
the complexing agent includes glycine, and
the corrosion inhibitor includes potassium nitrite or ammonium nitrate.

16. The CMP slurry composition as claimed in claim 1 , wherein the corrosion inhibitor includes sodium nitrite or potassium nitrite.

17. The CMP slurry composition as claimed in claim 1 , wherein the corrosion inhibitor includes potassium nitrite.

18. A CMP slurry composition for polishing a metal wire, the CMP slurry composition comprising:
polishing particles;
an oxidant;
a complexing agent;
a corrosion inhibitor; and
deionized water,
wherein the corrosion inhibitor includes sodium nitrite, potassium nitrite, ammonium nitrite, or a combination thereof, and
wherein the corrosion inhibitor is present in an amount of 0.001 wt % to less than 1 wt %, based on a total weight of the CMP slurry composition.

Assignees

• Samsung Sdi Co Ltd

Inventors

• Lee So Hyung
• Do Keun Bong
• Kim Dong Jin
• An Kang Su
• Jung Young Chul

Classifications

• H10P52/403

  of conductive or resistive materials · CPC title

• C23F11/04

  in markedly acid liquids · CPC title

• C23F3/04

  Heavy metals · CPC title

• B24B37/00

  Lapping machines or devices; Accessories (B24B3/00 takes precedence) · CPC title

• B24B1/00

  Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes · CPC title