Methods for forming a semiconductor device and a semiconductor device

Patent metadata

Field	Value
Publication number	US-10096677-B2
Application number	US-201615178039-A
Country	US
Kind code	B2
Filing date	Jun 9, 2016
Priority date	Jun 17, 2015
Publication date	Oct 9, 2018
Grant date	Oct 9, 2018

Abstract

A method for forming a semiconductor device includes implanting a predefined dose of protons into a semiconductor substrate. Further, the method comprises controlling a temperature of the semiconductor substrate during the implantation of the predefined dose of protons so that the temperature of the semiconductor substrate is within a target temperature range for more than 70% of an implant process time used for implanting the predefined dose of protons. The target temperature range reaches from a lower target temperature limit to an upper target temperature limit. Further, the lower target temperature limit is equal to a target temperature minus 30° C. and the upper target temperature limit is equal to the target temperature plus 30° C. and the target temperature is higher than 80° C.

First claim

The invention claimed is:

1. A method for forming a semiconductor device, the method comprising:
generating hydrogen-related donors, including implanting a predefined dose of protons into a semiconductor substrate to generate the hydrogen-related donors; and
controlling a temperature of the semiconductor substrate during the implantation of the predefined dose of protons so that the temperature of the semiconductor substrate is within a target temperature range for more than 70% of an implant process time used for implanting the predefined dose of protons, wherein the target temperature range reaches from a lower target temperature limit to an upper target temperature limit, wherein the lower target temperature limit is equal to a target temperature minus 30° C. and the upper target temperature limit is equal to the target temperature plus 30° C., and wherein the target temperature is higher than 80° C.

2. The method according to claim 1 , wherein a doping of a first doping region within the semiconductor substrate is based on the implantation of the predefined dose of protons, wherein the first region comprises a maximal concentration of hydrogen-related donors within the semiconductor substrate after forming the semiconductor device, and wherein the maximal concentration of hydrogen-related donors is larger than 3*10 14 cm −3 .

3. The method according to claim 1 , wherein the implantation of the predefined dose of protons is performed to provide a field stop region of a vertical transistor arrangement or a vertical diode arrangement at a predefined depth.

4. The method according to claim 3 , wherein the implantation of the predefined dose of protons is performed to provide simultaneously at least a part of a base doping of the semiconductor substrate between the predefined depth and a surface of the semiconductor substrate.

5. The method according to claim 1 , wherein implanting the predefined dose of protons is performed from a front side of the semiconductor substrate with an implant energy of more than 2.5 MeV to form a doping of a drift region of a vertical transistor arrangement or a vertical diode arrangement, the method further comprising:
thinning the semiconductor substrate from a back side of the semiconductor substrate; and
implanting a second predefined dose of protons from the back side of the semiconductor substrate with an implant energy of less than 2.5 MeV after the thinning of the semiconductor substrate to form a doping of a field stop region of a vertical transistor arrangement or a vertical diode arrangement.

6. The method according to claim 1 , wherein a doping of a first doping region within the semiconductor substrate is based on the implantation of the predefined dose of protons, wherein the first region comprises a maximal concentration of hydrogen-related donors within the semiconductor substrate after forming the semiconductor device, and wherein the maximal concentration of hydrogen-related donors is larger than 1*10 15 cm −3 .

7. The method according to claim 6 , wherein the maximal concentration of hydrogen-related donors is larger than 3*10 15 cm −3 .

8. The method according to claim 6 , wherein the first region is located at a first depth with respect to a first surface of the semiconductor substrate used for implanting the protons into the semiconductor substrate, wherein a doping of a second doping region within the semiconductor substrate is based on the implantation of the predefined dose of protons, wherein the second region is located at a second depth with respect to the first surface of the semiconductor substrate, wherein the first depth is twice the second depth, and wherein the second region comprises a concentration of hydrogen-related donors of less than 20% of the maximal concentration of hydrogen-related donors in the first region after forming the semiconductor device.

9. The method according to claim 6 , wherein the first region forms at least a part of a field stop region of a vertical transistor arrangement or a vertical diode arrangement.

10. The method according to claim 1 , wherein controlling a temperature of the semiconductor substrate during the implantation of the predefined dose of protons comprises:
measuring a temperature of the semiconductor substrate during the implantation of the predefined dose of protons; and
adjusting the temperature of the semiconductor substrate based on the measured temperature.

11. The method according to claim 1 , further comprising tempering the semiconductor substrate at a temperature higher than 300° C. for more than 1 h after the implantation of the predefined dose of protons.

12. The method according to claim 1 , wherein an implant energy of the protons is higher than 200 keV.

13. A method for forming a semiconductor device, the method comprising:
generating hydrogen-related donors, including implanting a predefined dose of protons into a semiconductor substrate with an implant energy of less than 2.5 MeV to generate the hydrogen-related donors; and
controlling a temperature of the semiconductor substrate during the implantation of the predefined dose of protons so that the temperature of the semiconductor substrate is higher than 80° C. for more than 70%, of an implant process time used for implanting the predefined dose of protons.

14. The method according to claim 13 , wherein the temperature of the semiconductor substrate is controlled during the implantation of the predefined dose of protons so that the temperature of the semiconductor substrate is within a target temperature range for more than 70% of the implant process time used for implanting the predefined dose of protons, wherein the target temperature range reaches from a lower target temperature limit to an upper target temperature limit, wherein the lower target temperature limit is equal to a target temperature minus 30° C. and the upper target temperature limit is equal to the target temperature plus 30° C., and wherein the target temperature is higher than 80° C.

15. The method according to claim 13 , wherein the temperature of the semiconductor substrate is controlled during the implantation of the predefined dose of protons so that the temperature of the semiconductor substrate is higher than 120° C. for more than 70% of the implant process time used for implanting the predefined dose of protons.

16. The method according to claim 13 , wherein the temperature of the semiconductor substrate is controlled during the implantation of the predefined dose of protons so that the temperature of the semiconductor substrate is higher than 80° C. for more than 90% of the implant process time used for implanting the predefined dose of protons.

17. The method according to claim 13 , wherein the implant energy of the protons is less than 1.6 MeV.

18. A method for forming a semiconductor device, the method comprising:
generating hydrogen-related donors, including implanting a predefined dose of protons into a semiconductor substrate to generate the hydrogen-related donors;
measuring a temperature of the semiconductor substrate during the implantation of the predefined dose of protons; and
adjusting a beam current of the protons during the implantation based on the measured temperature.

19. The method of claim 18 , wherein the beam current of the protons during the implantation is adjusted so that the temperature of the semiconductor substrate is higher than 80° C. for more than 70% of an implant process time used for implanting the predefined dose of protons.

Assignees

• Infineon Technologies Ag

Inventors

• Jelinek Moriz
• Ganagona Naveen Goud
• Laven Johannes Georg
• Schulze Hans-Joachim
• Schustereder Werner

Classifications

• H10P74/238

  comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement · CPC title

• H10P95/902

  for the formation of PN junctions without addition of impurities · CPC title

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P72/0602

  Temperature monitoring · CPC title

• H10P34/40

  with high-energy radiation · CPC title