Pattern forming method, method for manufacturing electronic device, and electronic device

Patent metadata

Field	Value
Publication number	US-10095111-B2
Application number	US-201715432460-A
Country	US
Kind code	B2
Filing date	Feb 14, 2017
Priority date	Sep 2, 2014
Publication date	Oct 9, 2018
Grant date	Oct 9, 2018

Abstract

There is provided a pattern forming method including (1) a step of forming a film with an active-light-sensitive or radiation-sensitive resin composition containing the following (A) to (C): (A) a resin having a repeating unit having a phenolic hydroxyl group, and having a group that decomposes by the action of an acid to generate a polar group, (B) a compound that generates an acid upon irradiation with active light or radiation, and (C) a compound having a cationic site and an anionic site in the same molecule, in which the cationic site and the anionic site are linked to each other via a covalent bond; (2) a step of exposing the film; and (3) a step of developing the exposed film using a developer including an organic solvent to form a negative tone pattern.

First claim

What is claimed is:

1. A pattern forming method comprising:
(1) a step of forming a film with an active-light-sensitive or radiation-sensitive resin composition containing the following (A) to (C):
(A) a resin having a repeating unit having a phenolic hydroxyl group, and having a group that decomposes by the action of an acid to generate a polar group,
(B) a compound that generates an acid upon irradiation with active light or radiation, and
(C) a compound having a cationic site and an anionic site in the same molecule, in which the cationic site and the anionic site are linked to each other via a covalent bond;
(2) a step of exposing the film; and
(3) a step of developing the exposed film using a developer including an organic solvent to form a negative tone pattern,
wherein the compound (C) is a compound represented by the following General Formula (C-1):
(Rx n2 -X ⊕ -L-A ⊖   (C-1)

in which A − represents an organic acid anion, L represents a single bond or a divalent linking group, and X + represents a nitrogen cation or an iodine cation;
Rx represents an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, or a heterocyclic group, in a case where Rx's are present in plural numbers, a plurality of Rx's may be the same as or different from each other, and at least one of n2 Rx's has 5 or more carbon atoms; and
in a case where X + represents a nitrogen cation, n2 represents 3, and in a case where X + represents an iodine cation, n2 represents 1.

2. The pattern forming method according to claim 1 ,
wherein A − represents a carboxylate anion.

3. The pattern forming method according to claim 1 ,
wherein X + represents a nitrogen cation.

4. The pattern forming method according to claim 1 ,
wherein Rx represents an alkyl group.

5. The pattern forming method according to claim 1 ,
wherein at least one of n2 Rx's has 3 or more carbon atoms.

6. The pattern forming method according to claim 1 ,
wherein the number of carbon atoms present between X + and the element having negative charge among the elements constituting A − is 5 or less.

7. The pattern forming method according to claim 1 ,
wherein the content of the compound (C) is 5% by mass or less with respect to the total solid content of the active-light-sensitive or radiation-sensitive resin composition.

8. The pattern forming method according to claim 1 , wherein the divalent linking group of L is an alkylene group, a cycloalkylene group, an arylene group, or a group composed of a combination of two or more of these groups.

9. The pattern forming method according to claim 1 , wherein Rx represents an alkyl group having 5 to 10 carbon atoms.

10. The pattern forming method according to claim 1 , wherein Rx represents an alkyl group having 6 to 8 carbon atoms.

11. The pattern forming method according to claim 1 , wherein the number of carbon atoms present between X + and the element having negative charge among the elements constituting A − is from 0 to 3.

12. The pattern forming method according to claim 1 , wherein the content of the compound (C) is 1 to 4% by mass, with respect to the total solids content of the active-light-sensitive or radiation-sensitive resin composition.

13. The pattern forming method according to claim 1 , wherein the compound (C) is any one of (C-1), (C-3), (C-6), (C-7), (C-9), (C-11), (C-13), (C-14), (C-16):

14. A method for manufacturing an electronic device, comprising
(1) a step of forming a film on an inorganic substrate or a coating type inorganic substrate suitable for use in a process of producing a semiconductor, a circuit board for a liquid crystal device or a thermal head with an active-light-sensitive or radiation-sensitive resin composition containing the following (A) to (C):
(A) a resin having a repeating unit having a phenolic hydroxyl group, and having a group that decomposes by the action of an acid to generate a polar group,
(B) a compound that generates an acid upon irradiation with active light or radiation, and
(C) a compound having a cationic site and an anionic site in the same molecule, in which the cationic site and the anionic site are linked to each other via a covalent bond;
(2) a step of exposing the film; and
(3) a step of developing the exposed film using a developer including an organic solvent to form a negative tone pattern.

Assignees

• Fujifilm Corp

Inventors

• Nihashi Wataru

Classifications

• H10P76/2041

  Photolithographic processes · CPC title

• G03F7/0045

  with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors · CPC title

• G03F7/325

  Non-aqueous compositions · CPC title

• G03F7/16

  Coating processes; Apparatus therefor (applying coatings to base materials in general B05; applying photosensitive compositions to base for photographic purposes G03C1/74) · CPC title

• G03F7/38

  Treatment before imagewise removal, e.g. prebaking {(G03F7/265 takes precedence)} · CPC title