Chemically amplified negative resist composition using novel onium salt and resist pattern forming process
US-2016299428-A1 · Oct 13, 2016 · US
US2016131972A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016131972-A1 |
| Application number | US-201514930869-A |
| Country | US |
| Kind code | A1 |
| Filing date | Nov 3, 2015 |
| Priority date | Nov 7, 2014 |
| Publication date | May 12, 2016 |
| Grant date | — |
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Sulfonium and iodonium salts of a carboxylate having an aromatic ring to which a nitrogen-containing alkyl or cyclic structure is attached are novel. The onium salt functions as an acid diffusion controlling agent in a resist composition, enabling to form a pattern of good profile with high resolution, improved MEF, LWR and DOF.
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1 . An onium salt compound having the general formula (1): wherein R 11 , R 22 , R 33 , R 44 , R 55 and R 01 are each independently hydrogen, or a straight C 1 -C 20 or branched or cyclic C 3 -C 20 monovalent hydrocarbon group which may be substituted with or separated by a heteroatom, a pair of R 11 and R 22 , or R 33 and R 01 may bond together to form a ring with the carbon atoms to which they are attached, or a pair of R 44 and R 55 may bond together to form a ring with the nitrogen atom to which they are attached, the ring may have an oxygen atom, sulfur atom or NH moiety interposed therein, J is 0 or 1, k is a number in the range: 0≦k≦1 when j=0 and 0≦k≦3 when j=1, Z + is a sulfonium cation of the general formula (a) or iodonium cation of the general formula (b): wherein R 100 , R 200 and R 300 are each independently a straight C 1 -C 20 or branched or cyclic C 3 -C 20 monovalent hydrocarbon group which may be substituted with or separated by a heteroatom, or any two or more of R 100 , R 200 and R 300 may bond together to form a ring with the sulfur atom, the ring may have a carbonyl moiety, sulfur atom, S(═O) moiety, SO 2 moiety, oxygen atom, or NH moiety interposed therein, R 400 and R 500 are each independently a straight C 1 -C 20 or branched or cyclic C 3 -C 20 monovalent hydrocarbon group which may be substituted with or separated by a heteroatom. 2 . A resist composition comprising (A) the onium salt compound of claim 1 , (B) a polymer, (C) a photoacid generator, and (D) an organic solvent, said polymer comprising recurring units having the general formulae (2) and (3): wherein R 1a is hydrogen, fluorine, methyl or trifluoromethyl, Z a is a single bond, phenylene, naphthylene or (backbone)-C(═O)—O—Z′—, Z′ is a straight C 1 -C 10 or branched or cyclic C 3 -C 10 alkylene group which may contain a hydroxyl moiety, ether bond, ester bond or lactone ring, or phenylene or naphthylene group, XA is an acid labile group, and YL is hydrogen or a polar group having at least one structure selected from the group consisting of hydroxyl, cyano, carbonyl, carboxyl, ether bond, ester bond, sulfonate bond, carbonate bond, lactone ring, sultone ring, and carboxylic anhydride. 3 . The resist composition of claim 2 wherein the polymer further comprises recurring units (d1) or (d2) having the general formula: wherein R 1a , R 100 , R 200 and R 300 are is as defined above, L′ is a C 2 -C 5 alkylene group, R Y is a straight C 1 -C 20 or branched or cyclic C 3 -C 20 monovalent hydrocarbon group which may be substituted with or separated by a heteroatom, A is hydrogen or trifluoromethyl, L″ is a single bond or a straight C 1 -C 20 or branched or cyclic C 3 -C 20 divalent hydrocarbon group which may be substituted with or separated by a heteroatom, m is 0 or 1, n is 0 or 1, with the proviso that n is 0 when L″ is a single bond. 4 . The resist composition of claim 2 wherein the photoacid generator has the general formula (4): wherein R 100 , R 200 , and R 300 are as defined above, X − is an anion of any one of the general formulae (5) to (8): wherein R fa , R fb1 , R fb2 , R fc1 , R fc2 , and R fc3 are each independently fluorine or a straight C 1 -C 40 or branched or cyclic C 3 -C 40 monovalent hydrocarbon group which may be substituted with or separated by a heteroatom, R fb1 and R fb2 , or R fc1 and R fc2 may bond together to form a ring with the segments to which they are attached, R fd is a straight C 1 -C 40 or branched or cyclic C 3 -C 40 monovalent hydrocarbon group which may be substituted with or separated by a heteroatom. 5 . The resist composition of claim 2 , further comprising a nonionic nitrogen-containing compound. 6 . The resist composition of claim 2 , further comprising a surfactant which is insoluble or substantially insoluble in water and soluble in alkaline developer and/or a surfactant which is insoluble or substantially insoluble in water and alkaline developer. 7 . A pattern forming process comprising the steps of applying the resist composition of claim 2 onto a substrate, prebaking to form a resist film, exposing the resist film to KrF excimer laser, ArF excimer laser, EB or EUV through a photomask, baking, and developing the exposed resist film in a developer. 8 . The pattern forming process of claim 7 wherein the exposing step is by immersion lithography wherein a liquid having a refractive index of at least 1.0 is interposed between the resist film and a projection lens. 9 . The pattern forming process of claim 8 , further comprising the step of forming a protective film on the resist film, and in the immersion lithography, the liquid is interposed between the protective film and the projection lens.
with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors · CPC title
Sulfur atoms · CPC title
Sulfides, hydropolysulfides, or polysulfides having thio groups bound to carbon atoms of six-membered aromatic rings · CPC title
Finishing the coated layer, e.g. drying, baking, soaking · CPC title
Macromolecular compounds which are rendered insoluble or differentially wettable (G03F7/075 takes precedence; macromolecular azides G03F7/012; macromolecular diazonium compounds G03F7/021) · CPC title
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