Variable gap hard stop design

Patent metadata

Field	Value
Publication number	US-10087525-B2
Application number	US-201514817953-A
Country	US
Kind code	B2
Filing date	Aug 4, 2015
Priority date	Aug 4, 2015
Publication date	Oct 2, 2018
Grant date	Oct 2, 2018

Abstract

A reaction system for processing semiconductor substrates is disclosed. The reaction system includes a susceptor for holding the substrate as well as a baseplate as a part of housing for the reaction system. A pin located on the susceptor can interact with a baseplate feature located on the baseplate to result in a variable gap between the susceptor and the baseplate. The baseplate feature may take the form of a series of steps, a wedge, or a milled-out feature.

First claim

We claim:

1. A reaction system comprising:
a susceptor configured to hold a substrate for processing;
a pin embedded within the susceptor;
a baseplate of a reaction region, the baseplate interacting with the susceptor at a periphery of the susceptor;
a movement element configured to rotate the susceptor and the substrate; and
a baseplate feature located on the baseplate;
wherein a gap is formed between the susceptor and the baseplate when the pin contacts the baseplate feature;
wherein a size of the gap can be adjusted based upon a location of the pin's contact on the baseplate feature; and
wherein the baseplate feature comprises a series of steps.

2. The reaction system of claim 1 , wherein the series of steps have a height ranging between 0.001 and 0.05 inches.

3. The reaction system of claim 2 , wherein the series of steps have a height ranging between 0.004 and 0.012 inches.

4. A reaction system comprising:
a susceptor configured to hold a substrate for processing;
a pin embedded within the susceptor;
a baseplate of a reaction region, the baseplate interacting with the susceptor at a periphery of the susceptor;
a movement element configured to rotate the susceptor and the substrate; and
a baseplate feature located on the baseplate;
wherein a gap is formed between the susceptor and the baseplate when the pin contacts the baseplate feature;
wherein a size of the gap can be adjusted based upon a location of the pin's contact on the baseplate feature; and
wherein the baseplate feature comprises a wedge.

5. The reaction system of claim 4 , wherein the wedge has a height ranging between 0.001 and 0.05 inches.

6. The reaction system of claim 5 , wherein the baseplate feature comprises a series of steps that have a height ranging between 0.004 and 0.012 inches.

7. The reaction system of claim 4 , wherein the baseplate feature comprises a top surface and a sloped surface.

8. A reaction system comprising:
a susceptor configured to hold a substrate for processing;
a pin embedded within the susceptor;
a baseplate of a reaction region, the baseplate interacting with the susceptor at a periphery of the susceptor;
a movement element configured to rotate the susceptor and the substrate; and
a baseplate feature located on the baseplate;
wherein a gap is formed between the susceptor and the baseplate when the pin contacts the baseplate feature;
wherein a size of the gap can be adjusted based upon a location of the pin's contact on the baseplate feature; and
wherein the baseplate feature is created by milling out of a portion from the baseplate, resulting in the baseplate feature comprising a vertical surface, a horizontal surface, and a sloped surface.

9. The reaction system of claim 8 , wherein the vertical surface of the baseplate feature has a height ranging between 0.001 and 0.05 inches.

10. The reaction system of claim 9 , wherein the vertical surface of the baseplate feature has a height ranging between 0.004 and 0.012 inches.

11. The reaction system of claim 8 , wherein a contact between the pin and the horizontal surface of the baseplate feature results in minimization of the gap between the baseplate and the susceptor.

12. A baseplate assembly comprising:
a baseplate configured to define an area in which a reaction takes place; and
a baseplate feature disposed on the baseplate;
wherein the baseplate feature is configured to interact with a pin located on a susceptor holding a substrate;
wherein a contact of the pin onto the baseplate feature creates a gap between the baseplate and the susceptor, a size of the gap being dependent on a location of the contact relative to the baseplate feature; and
wherein the baseplate feature comprises a step.

13. The baseplate assembly of claim 12 , wherein the step has a height ranging between 0.004 and 0.012 inches.

14. A baseplate assembly comprising:
a baseplate configured to define an area in which a reaction takes place; and
a baseplate feature disposed on the baseplate;
wherein the baseplate feature is configured to interact with a pin located on a susceptor holding a substrate;
wherein a contact of the pin onto the baseplate feature creates a gap between the baseplate and the susceptor, a size of the gap being dependent on a location of the contact relative to the baseplate feature; and
wherein the baseplate feature comprises a wedge.

15. The baseplate assembly of claim 14 , wherein the baseplate feature comprises a series of wedges.

16. The baseplate assembly of claim 14 , wherein the wedge has a height ranging between 0.004 and 0.012 inches.

17. A baseplate assembly comprising:
a baseplate configured to define an area in which a reaction takes place; and
a baseplate feature disposed on the baseplate;
wherein the baseplate feature is configured to interact with a pin located on a susceptor holding a substrate;
wherein a contact of the pin onto the baseplate feature creates a gap between the baseplate and the susceptor, a size of the gap being dependent on a location of the contact relative to the baseplate feature; and
wherein the baseplate feature is created by milling out of a portion from the baseplate, resulting in the baseplate feature comprising a vertical surface, a horizontal surface, and a sloped surface.

18. The baseplate assembly of claim 17 , wherein the vertical surface of the baseplate feature has a height ranging between 0.004 and 0.012 inches.

19. The baseplate assembly of claim 17 , wherein a contact between the pin and the horizontal surface of the baseplate feature results in minimization of the gap between the baseplate and the susceptor.

20. The baseplate assembly of claim 19 , wherein the minimization of the gap between the baseplate and the susceptor provides an indication of a warping status of the baseplate assembly or the susceptor.

Assignees

• Asm Ip Holding Bv

Inventors

• Schmotzer Michael
• Whaley Shawn

Classifications

• H10P72/7624

  characterised by the mechanical construction of the susceptor, stage or support · CPC title

• H10P72/7611

  characterised by edge profile or support profile · CPC title

• C23C16/4588 Primary

  the substrate being rotated · CPC title

• C23C16/4412

  Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps · CPC title

• C23C16/4401

  Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber · CPC title