Image sensors with LED flicker mitigaton global shutter pixles

Patent metadata

Field	Value
Publication number	US-10072974-B2
Application number	US-201615174708-A
Country	US
Kind code	B2
Filing date	Jun 6, 2016
Priority date	Jun 6, 2016
Publication date	Sep 11, 2018
Grant date	Sep 11, 2018

Abstract

An image sensor may include one or more pixels having a charge steering structure that may selectively route charge from a photodiode to increase the dynamic range of the pixel. The charge steering structure may be a coupled gate structure that routes overflow charge to a voltage supply and to one or more integrating storage structures during an exposure period. The charge steering structure may be two integrating storage structures directly connected to the photodiode that each integrate charge generated by the photodiode in an alternating fashion during an exposure period. Storage structures and transistors within the charge steering structure may receive control signals, which may be asserted in a mutually exclusive manner. Pixels may also include a dual-gain structure, which may provide additional charge storage capacity.

First claim

What is claimed is:

1. An image sensor pixel comprising:
a photodiode that generates charge in response to incident light during an exposure period;
a threshold transistor that is coupled to the photodiode and that is set to a threshold voltage, wherein a portion of the generated charge overflows past the threshold transistor as overflow charge;
a reset transistor coupled to a voltage supply, wherein the threshold transistor is interposed between the photodiode and the reset transistor;
a first storage structure coupled to the threshold transistor;
a second storage structure coupled to the photodiode through the first storage structure; and
a floating diffusion node coupled to the second storage structure.

2. The image sensor pixel defined in claim 1 , wherein a first portion of the overflow charge is routed to and stored at the first storage structure, and wherein a second portion of the overflow charge is routed to the voltage supply through the reset transistor.

3. The image sensor pixel defined in claim 2 , wherein the reset transistor receives a first control signal that oscillates between a high voltage and a low voltage during the exposure period, wherein the first storage structure receives a second control signal that oscillates between the high voltage and a medium voltage during the exposure period, and wherein the first control signal being at the high voltage is mutually exclusive with the second control signal being at the high voltage.

4. The image sensor pixel defined in claim 3 , further comprising:
a third storage structure coupled to the threshold transistor; and
a fourth storage structure coupled between the third storage structure and the floating diffusion node.

5. The image sensor pixel defined in claim 4 , wherein the third storage structure receives a third control signal that oscillates between the high voltage and the medium voltage, and wherein the third control signal being at the high voltage is mutually exclusive with the first control signal being at the high voltage and with the second control signal being at the high voltage.

6. The image sensor pixel defined in claim 1 , wherein signals are read out from the image sensor pixel in a global shutter mode.

7. An image sensor comprising:
an array of pixels arranged in rows and columns, wherein each pixel comprises:
a photosensitive element that generates charge in response to impinging light;
a charge steering structure coupled to the photosensitive element, wherein the charge steering structure comprises a threshold transistor that is coupled to the photosensitive element and that is set to a threshold voltage and wherein a portion of the generated charge overflows past the threshold transistor as overflow charge;
a storage structure coupled to the photosensitive element through the charge steering structure; and
a floating diffusion node coupled to the storage structure.

8. The image sensor defined in claim 7 , wherein the charge steering structure comprises:
a reset transistor coupled to a voltage supply, wherein the threshold transistor is interposed between the photodiode and the reset transistor.

9. The image sensor defined in claim 8 , wherein each pixel further comprises:
an additional storage structure coupled between the threshold transistor and the storage structure, wherein a first portion of the overflow charge is routed to and stored at the additional storage structure, and wherein a second portion of the overflow charge is routed to the voltage supply through the reset transistor.

10. The image sensor defined in claim 9 , wherein the reset transistor receives a first control signal that oscillates at a first frequency during the exposure period, wherein the additional storage structure receives a second control signal that oscillates at the first frequency during the exposure period, and wherein the first control signal is 180 degrees out of phase with the second control signal during the exposure period.

11. The image sensor defined in claim 9 , wherein each pixel further comprises:
a gain select capacitor coupled to the floating diffusion node; and
a gain select transistor coupled between the gain select capacitor and the additional storage structure.

12. The image sensor defined in claim 11 , wherein each pixel further comprises:
an additional gain select capacitor coupled to the floating diffusion node; and
an additional gain select transistor coupled between the additional gain select capacitor and the additional storage structure.

13. The image sensor defined in claim 12 , wherein a first portion of the overflow charge is routed to and stored at the additional storage structure and at a selected one of the gain select capacitor and the additional gain select capacitor via activation of the additional storage structure, and wherein a second portion of the overflow charge is routed to the voltage supply through the reset transistor via activation of the reset transistor.

14. The image sensor defined in claim 13 , wherein the activation of the reset transistor and activation of the additional storage structure are mutually exclusive.

15. An imaging system comprising:
an image sensor having an array of pixels arranged in rows and columns, wherein each pixel in the array of pixels comprises:
a photodiode that generates charge in response to incident light;
a first charge storage structure coupled to the photodiode, wherein the first charge storage structure comprises one of a storage gate and a storage diode;
a second charge storage structure coupled to the photodiode, wherein the second charge storage structure comprises one of a storage gate and a storage diode;
a floating diffusion node coupled to the first charge storage structure; and
a third charge storage structure coupled between the second charge storage structure and the floating diffusion node.

16. The imaging system defined in claim 15 , wherein a first portion of the charge is routed to and stored at the first charge storage structure, and wherein a second portion of the charge is routed to and stored at the second charge storage structure.

17. The imaging system defined in claim 16 , wherein the first charge storage structure receives a first control signal that oscillates between a high voltage and a medium voltage during the exposure period, wherein the second charge storage structure receives a second control signal that oscillates between the high voltage and the medium voltage during the exposure period, and wherein the first control signal being at the high voltage is mutually exclusive with the second control signal being at the high voltage.

18. The imaging system defined in claim 15 , wherein each pixel in the array of pixels further comprises:
a voltage supply; and
an anti-blooming transistor coupled between the photodiode and the voltage supply.

19. The imaging system defined in claim 15 , wherein each pixel in the array of pixels further comprises:
a first transfer transistor interposed between the first charge storage structure and the floating diffusion node;
a second transfer transistor interposed between the second charge storage structure and the third charge storage structure; and
a third transfer transistor interposed between the third charge storage structure and the floating diffusion node.

20. The image sensor defined in claim 7 , wherein the portion of the generated charge that overflows past the threshold transistor is a first portion of the generated charge and wherein a second portion of th

Assignees

• Semiconductor Components Ind Llc

Inventors

• Geurts Tomas

Classifications

• H04N23/70

  Circuitry for compensating brightness variation in the scene · CPC title

• H04N25/771

  comprising storage means other than floating diffusion · CPC title

• H04N25/59 Primary

  by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance · CPC title

• H04N25/622

  by controlling anti-blooming drains · CPC title

• G01J1/44

  Electric circuits {(for command of an exposure part G03B7/02)} · CPC title