Transistor contacts self-aligned in two dimensions

Patent metadata

Field	Value
Publication number	US-10056373-B2
Application number	US-201715490702-A
Country	US
Kind code	B2
Filing date	Apr 18, 2017
Priority date	Apr 7, 2014
Publication date	Aug 21, 2018
Grant date	Aug 21, 2018

Abstract

Embodiments of the present invention provide an improved semiconductor structure and methods of fabrication that provide transistor contacts that are self-aligned in two dimensions. Two different capping layers are used, each being comprised of a different material. The two capping layers are selectively etchable to each other. One capping layer is used for gate coverage while the other capping layer is used for source/drain coverage. Selective etch processes open the desired gates and source/drains, while block masks are used to cover elements that are not part of the connection scheme. A metallization line (layer) is deposited, making contact with the open elements to provide electrical connectivity between them.

First claim

What is claimed is:

1. A semiconductor structure comprising:
a plurality of transistor gates;
a plurality of transistor source/drain contact areas;
a capping layer disposed on a subset of the plurality of transistor source/drain contact areas; and
a metallization layer disposed on the capping layer.

2. The semiconductor structure of claim 1 , wherein the metallization layer is in electrical contact with at least one transistor gate of the plurality of transistor gates.

3. The semiconductor structure of claim 1 , wherein the metallization layer is in electrical contact with at least one source/drain contact area of the plurality of transistor source/drain contact areas.

4. The semiconductor structure of claim 1 , further comprising a dielectric region bounding the metallization layer.

5. The semiconductor structure of claim 4 , further comprising a plurality of spacers adjacent to each transistor gate of the plurality of transistor gates.

6. The semiconductor structure of claim 5 , wherein the capping layer is comprised of silicon oxide, the dielectric region is comprised of silicon oxycarbide, and the plurality of spacers are comprised of a material selected from the group consisting of silicon oxycarbide and silicon oxycarbonitride.

7. The semiconductor structure of claim 1 , wherein the capping layer comprises silicon oxide.

8. The semiconductor structure of claim 1 , wherein the capping layer comprises silicon nitride.

9. The semiconductor structure of claim 1 , wherein the metallization layer comprises tungsten.

10. The semiconductor structure of claim 1 , wherein the metallization layer comprises copper.

11. A semiconductor structure comprising:
a plurality of transistor gates;
a plurality of transistor source/drain contact areas;
a capping layer disposed on a subset of the plurality of transistor source/drain contact areas;
a metallization layer disposed on the capping layer; and
a gate-source/drain stitch structure connecting one of the plurality of transistor gates to an adjacent one of the plurality of transistor source/drain contact areas.

12. The semiconductor structure of claim 11 , wherein the metallization layer is in electrical contact with at least one transistor gate of the plurality of transistor gates.

13. The semiconductor structure of claim 11 , wherein the metallization layer is in electrical contact with at least one source/drain contact area of the plurality of transistor source/drain contact areas.

14. The semiconductor structure of claim 11 , further comprising a dielectric region bounding the metallization layer.

15. The semiconductor structure of claim 14 , further comprising a plurality of spacers adjacent to each transistor gate of the plurality of transistor gates.

16. The semiconductor structure of claim 15 , wherein the capping layer is comprised of silicon oxide, the dielectric region is comprised of silicon oxycarbide, and the plurality of spacers are comprised of a material selected from the group consisting of silicon oxycarbide and silicon oxycarbonitride.

17. The semiconductor structure of claim 11 , wherein:
the capping layer comprises one of a silicon oxide material or a silicon nitride material; and
the metallization layer comprises one of a tungsten material or a copper material.

18. A semiconductor device comprising:
a plurality of gates;
a plurality of source/drain contact areas;
a capping layer disposed on a subset of the plurality of source/drain contact areas;
a metallization layer disposed on the capping layer, wherein a first portion of the metallization layer being in contact with at least one gate of the plurality of gates, and wherein a second portion of the metallization layer being in contact with least one source/drain contact area of the plurality of source/drain contact areas; and
a dielectric region at least partially encompassing the metallization layer.

19. The semiconductor device of claim 18 , further comprising a plurality of spacers adjacent to each gate of the plurality of gates.

20. The semiconductor device of claim 18 , wherein the capping layer is comprised of silicon oxide, the dielectric region is comprised of silicon oxycarbide, and the plurality of spacers are comprised of a material selected from the group consisting of silicon oxycarbide and silicon oxycarbonitride.

Assignees

• Globalfoundries Inc

Inventors

• Wei Andy Chih-Hung
• Bouche Guillaume
• Zaleski Mark A
• Neogi Tuhin Guha
• Stephens Jason E
• Kye Jongwook
• Zeng Jia

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/418

  the conductive layers comprising transition metals · CPC title

• H10W20/4441

  the principal metal being a refractory metal · CPC title

• H10W20/4421

  the principal metal being copper · CPC title