Plasma processing apparatus and temperature control method

Patent metadata

Field	Value
Publication number	US-10056223-B2
Application number	US-201313932151-A
Country	US
Kind code	B2
Filing date	Jul 1, 2013
Priority date	Jul 2, 2012
Publication date	Aug 21, 2018
Grant date	Aug 21, 2018

Abstract

A plasma processing apparatus includes a lower electrode 12 on which a wafer W is provided. A second coolant path 70 b is formed in a spiral shape in a region within the lower electrode 12 corresponding to where the wafer W is placed. Further, a first coolant path 70 a is formed in a spiral shape to be located in a lower region within the lower electrode 12 corresponding to where the second coolant path 70 b is formed. A pipeline 72 connected to a chiller unit 71 is branched into a first pipeline 72 a connected to the first coolant path 70 a and a second pipeline 72 b connected to the second coolant path 70 b . A check valve 90 allowing a coolant to flow in one direction is provided on the first pipeline 72 a , and a reversing unit 92 reversing a flow direction of the coolant is provided on the pipeline 72.

First claim

I claim:

1. A plasma processing apparatus, comprising:
a processing chamber in which a plasma processing space is formed;
a mounting table provided within the processing chamber and configured to mount thereon a processing target substrate;
a gas supply device configured to introduce a processing gas to be used in plasma reaction into the plasma processing space;
a plasma generating device configured to supply electromagnetic energy to excite the processing gas introduced in the plasma processing space into plasma;
a plurality of coolant paths formed within the mounting table;
a temperature controller configured to control a temperature of a coolant flown and circulated through the plurality of coolant paths; and
a reversing unit configured to reverse a flow direction of the coolant that flows and circulates through the plurality of coolant paths,
wherein the plurality of coolant paths include a first coolant path and a second coolant path,
a chiller unit pipeline is positioned between the temperature controller and the first and second coolant paths,
an intermediate pipeline is positioned between the temperature controller and the reversing unit,
a reversing unit pipeline is positioned between the reversing unit and the first and second coolant paths,
the chiller unit pipeline is branched into two first pipelines and the two first pipelines are directly connected with the chiller unit pipeline,
the reversing unit pipeline is branched into two second pipelines and the two second pipelines are directly connected with the reversing unit pipeline,
one of the first pipelines and one of the second pipelines are connected with the first coolant path at different circumferential positions,
the other one of the first pipelines and the other one of the second pipelines are connected with the second coolant path at different circumferential positions,
a check valve is provided on or within the one of the first pipelines such that, when the coolant flows in one direction, the coolant flows only into the other one of the first pipelines from among the two first pipelines,
the check valve includes a valve sheet and a plate-shaped valve body provided at the valve sheet,
when the coolant flows in the one direction, the plate-shaped valve body of the check valve is configured to stand up by a force of the coolant, so that the one of the first pipelines is closed, and
when the coolant flows in an opposite direction, the plate-shaped valve body of the check valve is configured to fall down by the force of the coolant, so that the one of the first pipelines is opened.

2. The plasma processing apparatus of claim 1 , further comprising:
a controller configured to control the reversing unit to reverse the flow direction of the coolant according to a switchover timing of plasma processes performed in the plasma processing apparatus.

3. The plasma processing apparatus of claim 1 , further comprising:
a focus ring provided on the mounting table to surround a region where the processing target substrate is placed,
wherein the first coolant path is formed in a region within the mounting table corresponding to the focus ring and the second coolant path is formed in a region within the mounting table corresponding to the region where the processing target substrate is placed.

4. The plasma processing apparatus of claim 1 ,
wherein the first coolant path and the second coolant path are formed in a region within the mounting table corresponding to a region where the processing target substrate is placed, and the first coolant path and the second coolant path are arranged separately in a vertical direction.

5. The plasma processing apparatus of claim 1 ,
wherein the first coolant path is formed in a region within the mounting table corresponding to a region where the processing target substrate is placed, and the second coolant path is formed in a region within the mounting table corresponding to a region where a periphery portion of the processing target substrate is located.

6. The plasma processing apparatus of claim 1 ,
wherein the first coolant path is formed in a region within the mounting table corresponding to a region where the processing target substrate is placed, and the second coolant path is formed in a region within the mounting table corresponding to a region where an intermediate portion between a central portion and a periphery portion of the processing target substrate thereof is located.

Assignees

• Tokyo Electron Limted
• Tokyo Electron Ltd

Inventors

• Nagayama Nobuyuki

Classifications

• H10P72/7624

  characterised by the mechanical construction of the susceptor, stage or support · CPC title

• H10P72/722

  Details of electrostatic chucks · CPC title

• H10P72/00

  Handling or holding of wafers, substrates or devices during manufacture or treatment thereof · CPC title

• H01L21/6833

  Electricity · mapped topic

• H01J37/32155

  Frequency modulation · CPC title